研究目的
Investigating the suppression of phosphorus segregation in germanium by the incorporation of carbon to achieve ultrashallow junctions and excellent ohmic behaviors.
研究成果
The incorporation of carbon atoms around the P δ-doping layer in Ge significantly suppresses P segregation, enabling the formation of ultrashallow junctions with excellent ohmic behaviors. This technique is promising for the development of high-performance n-channel Ge MOSFETs.
研究不足
The mechanism of suppression of P segregation by carbon is not yet clear. The activation ratio of δ-doped P for samples with carbon is slightly lower than those without carbon.
1：Experimental Design and Method Selection:
The δ-doping of P during the growth of Ge was performed by molecular beam epitaxy (MBE) on nondoped Czochralski Ge(111) substrates. The effect of carbon incorporation on P segregation was investigated by comparing samples with and without carbon.
2：Sample Selection and Data Sources:
Ge(111) substrates with resistivities of 30–40 Ω cm were used. The depth distribution of P and carbon was measured by secondary ion mass spectrometry (SIMS).
3：List of Experimental Equipment and Materials:
MBE chamber, GaP decomposition Knudsen cell, SIMS (PHI ADEPT1010), transmission electron microscopy (XTEM), atom probe tomography (APT).
4：Experimental Procedures and Operational Workflow:
After chemical cleaning, substrates were loaded into the MBE chamber. P was deposited using a GaP decomposition Knudsen cell, followed by the growth of Ge capping layers at various temperatures.
5：Data Analysis Methods:
The depth distribution of P and carbon was analyzed by SIMS. Electrical characteristics were investigated by I–V measurements and Hall measurements.
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