研究目的
Investigating the effects of 11.5 MeV and 1.0 MeV electron irradiation on the GaInP top cell of GaInP/GaAs/Ge triple-junction solar cells using temperature-dependent photoluminescence measurements.
研究成果
Temperature-dependent photoluminescence measurement was applied to analyze the effects of 11.5 MeV electrons irradiation on the GaInP top cell of GaInP/GaAs/Ge triple-junction solar cells. PL intensity was observed to decrease monotonically from 10 K to 270 K with a rapid degradation between 190 K and 230 K, and increase slightly from 270 K to 300 K, showing a slight PL NTQ behavior at room temperature. The nonradiative recombination centers, attributing to the PL thermal quenching, introduced by 11.5 MeV electron irradiation are identified as H2 (Ev + 0.55 eV) hole trap and H3 (Ev + 0.76 eV) hole trap. By comparing the temperature-dependent PL processes of the GaInP top cell irradiated with 11.5 MeV and 1.0 MeV electrons, the activated temperature of the nonradiative recombination centers and the intermediate states are found to be different. The results confirm the NTQ behavior existed in the GaInP top cell and can provide reference for the use of solar cells in space environment.
研究不足
The study focuses on the effects of electron irradiation at specific energies (11.5 MeV and 1.0 MeV) and does not cover a wider range of electron energies. The analysis is limited to temperature-dependent photoluminescence measurements and does not include other characterization techniques.
