研究目的
Investigating the electrical and structural characterization of Si implanted homoepitaxially grown AlN to achieve high n-type conductivity for UV optoelectronics and high-power device applications.
研究成果
The study demonstrates the ability to use ion implantation to achieve a uniform doping profile in AlN with significant lattice damage recovery through a novel annealing procedure. An order of magnitude increase in room temperature n-type conductivity was observed compared to previous methods, with a low activation energy suggesting suppression of DX-center formation.
研究不足
The study is limited by the residual lattice damage and/or the formation of vacancy complexes after annealing, which may still affect the conductivity. Further optimization of the annealing process is needed.
1：Experimental Design and Method Selection:
The study involves Si implantation into AlN films grown on single crystal AlN substrates via metal organic chemical vapor deposition (MOCVD). A novel annealing procedure was developed to recover lattice damage.
2：Sample Selection and Data Sources:
AlN substrates processed from AlN boules grown by physical vapor transport (PVT) were used. AlN homoepitaxial films were grown via MOCVD on single crystal AlN substrates.
3：List of Experimental Equipment and Materials:
Philips X’Pert Materials Research Diffractometer system for HR-XRD, Trion Technology Minilock II reactive ion etcher (RIE) for etching, and electron-beam evaporation for metal stack deposition.
4：Experimental Procedures and Operational Workflow:
Si was implanted into the AlN film at room temperature. Post-implantation annealing was performed at 1200°C for 120 minutes. Electrical contacts were made using Ti/Al/Ni/Au and V/Al/Ni/Au metal stacks.
5：Data Analysis Methods:
Secondary ion mass spectroscopy (SIMS) for doping profile, high-resolution x-ray diffraction (HR-XRD) for crystal quality assessment, and temperature dependent resistivity measurements for electrical properties evaluation.
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