研究目的
Investigating the transient thermal response of GaAs pHEMTs under pulsed conditions using gate resistance thermometry and developing a scalable 3-D finite-element thermal model for thermal optimization of devices and circuits.
研究成果
Transient GRT effectively characterizes the thermal response of GaAs pHEMTs, enabling the development of a scalable 3-D FEM thermal model. The model provides insights into thermal coupling between gate fingers and aids in the thermal optimization of device layouts. The technique is applicable to other semiconductor technologies.
研究不足
The model assumes rectilinear dimensions for device geometry, which may not capture all physical complexities. The epi-region's exact structure is unknown, requiring an equivalent thermal conductivity to be fitted.
1：Experimental Design and Method Selection:
Utilizes transient gate resistance thermometry (GRT) to measure the thermal response of GaAs pHEMTs under pulsed conditions. A TFR-heated test structure is used to develop a 3-D finite-element thermal model.
2：Sample Selection and Data Sources:
Two device geometries are tested: a 1-finger, 100-μm wide device and an 8-finger, 100-μm wide device. Measurements are taken under various power densities and ambient temperatures.
3：List of Experimental Equipment and Materials:
GaAs pHEMT devices, TFR heater, SYMMIC by Capesym for 3D FEM thermal simulations.
4：Experimental Procedures and Operational Workflow:
Devices are biased under pulsed conditions, and GRT is used to measure temperature rise. The model is calibrated and verified using measurements from both device geometries.
5：Data Analysis Methods:
The thermal model's parameters are optimized to fit the measured data, focusing on thermal conductivity and specific heat capacity of the epi and substrate regions.
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