研究目的
Investigating the transfer of a stress-free single crystal silicon layer onto a glass substrate using hydrogen ion implantation and heterogeneous direct wafer bonding.
研究成果
The study successfully demonstrated the large area transfer of a stress-free single crystal silicon layer onto a glass substrate using heterogeneous DWB and ion-cut process. The transferred layer retained its crystallinity and was of high quality, making this method promising for applications in microelectronic, optoelectronic, and MEMS systems.
研究不足
The study was limited by the need for very smooth surfaces (RMS roughness <1 nm) for successful bonding and the potential for thermo-mechanical stresses at the bonded interface at higher annealing temperatures.
1：Experimental Design and Method Selection:
The study involved hydrogen ion (H+) implantation into silicon wafers at room temperature followed by heterogeneous direct wafer bonding (DWB) with a glass substrate. Post-implantation annealing was conducted to facilitate layer transfer.
2：Sample Selection and Data Sources:
3-inch diameter p-type (111) Si wafers were implanted with 100 keV H+ ions. Both the H-implanted Si wafer and glass substrate were supplied by Corning Inc., USA.
3：List of Experimental Equipment and Materials:
The equipment used included an atomic force microscopy (AFM) from Bruker, stylus surface profilometers from KLA-Tencor, and a Raman spectroscopy from Horiba LabRAM HR Evolution Raman spectrometer.
4：Experimental Procedures and Operational Workflow:
The process included cleaning of substrates, H+ implantation, DWB at room temperature, and annealing at temperatures ranging from 80 to 330 °C for different durations.
5：Data Analysis Methods:
The surface roughness was measured using AFM, the thickness of the transferred layer was measured using optical profilometer, and the stress and crystallinity of the transferred layer were analyzed using Raman spectroscopy.
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