研究目的
Investigating the variation of the lattice thermal conductivity of GaAs under pressure within the range of 0–20 GPa at room temperature.
研究成果
The lattice thermal conductivity of GaAs increases nonlinearly with pressure up to the phase transition point, beyond which it drops sharply and becomes anisotropic. The study provides insights into the pressure dependence of thermal conductivity in GaAs, highlighting its potential for thermal management applications.
研究不足
The study focuses on theoretical calculations and does not include experimental validation. The effects of higher-order phonon processes and other scattering mechanisms are not considered.
1：Experimental Design and Method Selection:
First-principles calculations combined with the phonon Boltzmann transport equation were used to investigate the lattice thermal conductivity of GaAs under pressure.
2：Sample Selection and Data Sources:
GaAs samples were used, with calculations performed for pressures ranging from 0 to 20 GPa.
3：List of Experimental Equipment and Materials:
Quantum ESPRESSO (QE) package for first-principles calculations, ShengBTE for solving the phonon Boltzmann transport equation.
4：Experimental Procedures and Operational Workflow:
Calculations of lattice thermal conductivity, phonon group velocity, and relaxation time under various pressures.
5：Data Analysis Methods:
Analysis of phonon heat transport properties, including group velocity and relaxation time, to understand the pressure dependence of thermal conductivity.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
