研究目的
Exploring the presence of strong magnetoelectric (ME) coupling in a sputtered deposited NiMnIn/aluminum nitride (AlN) heterostructure on an Si substrate.
研究成果
The AlN/NiMnIn ME heterostructure exhibits a high magnetoelectric coupling coefficient of (cid:2)99.2 V/cm Oe at 300 Oe bias field, suggesting its potential in magnetic field sensing and energy harvesting applications.
研究不足
The study is limited to the specific conditions of the DC magnetron sputtering system and the materials used. The ME coupling coefficient's dependency on the AC magnetic field is only linear up to 8 Oe.
1：Experimental Design and Method Selection:
The study involves the fabrication of AlN/NiMnIn thin film heterostructures using a DC magnetron sputtering system. The crystallographic structure and phase formation were analyzed using X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy.
2：Sample Selection and Data Sources:
Si (100) p-type substrates were used. The NiMnIn thin film was grown on an Si substrate, followed by the AlN thin film.
3：List of Experimental Equipment and Materials:
DC magnetron sputtering system, X-ray diffractometer, field emission scanning electron microscope, vibrating sample magnetometer, HP 4294 impedance analyzer.
4：Experimental Procedures and Operational Workflow:
The NiMnIn thin film was grown on an Si substrate, followed by the AlN thin film. The ME coupling coefficient was measured by subjecting the heterostructure to an in-plane magneto-static field with a small alternating magnetic field.
5：Data Analysis Methods:
The ME coupling coefficient was calculated from the induced ME voltage and the applied magnetic field.
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