研究目的
To develop a low cost and highly efficient graphene transfer technique to achieve defect-free graphene sheets with low contact resistance onto various substrates.
研究成果
The study demonstrates an effective method for transferring graphene onto SiO2/Si substrates using supercritical CO2 as a cleaning agent, producing clean and dry samples without damaging the graphene's crystalline quality. This technique is promising for electronic device fabrication.
研究不足
The method may result in folded or broken graphene films after the cleaning process, which could affect the uniformity and integrity of the graphene layer.
1：Experimental Design and Method Selection:
The study involves the direct transfer of CVD-grown graphene on copper foils onto SiO2 substrates using a supercritical CO2 assisted-cleaning technique.
2：Sample Selection and Data Sources:
Polycrystalline copper foils (
3：99% purity, 25 μm-thick) were used as substrates for graphene growth. List of Experimental Equipment and Materials:
Equipment includes a CN-200TH ULVAC - Japan for graphene synthesis, SAMDRI-PVT-3D for supercritical CO2 treatment, and characterization tools like optical microscopy, Raman spectroscopy, SEM (Hitachi S-4800), and AFM (Bruker).
4：Experimental Procedures and Operational Workflow:
The process includes cleaning copper foils, graphene synthesis via CVD, etching of copper, transfer of graphene onto SiO2/Si substrates, and cleaning with supercritical CO
5：Data Analysis Methods:
Characterization was performed using optical microscopy, Raman spectroscopy, SEM, and AFM to assess the quality and cleanliness of the transferred graphene.
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