研究目的
Designing a low-phase noise 8.22 GHz GaN HEMT oscillator using a feedback multi-path transformer to improve performance in wireless communication systems.
研究成果
The designed 8.22 GHz GaN HEMT oscillator with a 3-path transformer feedback achieves low phase noise (?120.82 dBc/Hz at 1 MHz offset) and high figure of merit (?192.76 dBc/Hz), outperforming many existing GaN oscillators. This demonstrates the effectiveness of multi-path transformers in enhancing oscillator performance for wireless applications, suggesting potential for future optimizations in phase noise reduction and power efficiency.
研究不足
The phase noise includes 1/f^α noise at low offsets due to upconversion of device flicker current noise, and the oscillator's performance is dependent on bias conditions, which may limit stability in some applications. The use of specific GaN process may constrain scalability or integration with other technologies.
1：Experimental Design and Method Selection:
The oscillator was designed using a GaN HEMT process with a transformer feedback network, employing a 3-path secondary inductor for high Q-factor. Theoretical models for resonant frequency and gain conditions were derived from small-signal equivalent circuits.
2：Sample Selection and Data Sources:
The oscillator was fabricated using the WIN 0.25 μm GaN/SiC HEMT process, with samples characterized for performance metrics.
3：25 μm GaN/SiC HEMT process, with samples characterized for performance metrics.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: GaN HEMT devices, on-chip transformers, capacitors, inductors, biasing resistors, and voltage sources were used. Specific models or brands are not detailed in the paper.
4：Experimental Procedures and Operational Workflow:
The oscillator was biased with voltages VDD1, VB, VDD2, and VBIAS. Measurements included output spectrum, phase noise, power consumption, and frequency tuning by varying VDD1 and VB.
5：Data Analysis Methods:
Phase noise was measured at 1 MHz offset, and figure of merit (FoM) was calculated using the formula FoM = L(Δω) + 10*log(PDC) - 20*log(ωo/Δω). Simulations and measurements were compared for Q-factor, inductance, and coupling factor.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
