研究目的
Investigating the influence of Sb dopant concentration on the structural, electrical, and photoelectrochemical properties of Cu2O thin films for photoelectrochemical applications.
研究成果
The optimal Sb doping concentration of 0.75 mol % in Cu2O films results in highly (111) oriented crystals with improved structural, electrical, and optical properties. Post-thermal annealing at 773 K in N2 further enhances light absorption and electrical conductivity, leading to a photocurrent density of 0.65 mA/cm2 without catalysts, demonstrating potential for efficient photoelectrochemical water splitting.
研究不足
The study is limited to electrodeposited Cu2O films on ITO substrates; Hall effect measurements could not be performed due to conductive substrates. Excess Sb doping leads to precipitation issues, and the phase stability of Cu2O during annealing is a concern due to potential oxidation to CuO.
1：Experimental Design and Method Selection:
The study used electrodeposition to synthesize Sb-doped Cu2O thin films, with a focus on optimizing Sb concentration and post-thermal annealing. Theoretical models include nucleation kinetics and Mott-Schottky analysis.
2：Sample Selection and Data Sources:
ITO-coated glass substrates were used, cleaned ultrasonically. Precursor solutions included copper sulfate, lactic acid, sodium hydroxide, and antimony sulfate.
3：List of Experimental Equipment and Materials:
Equipment includes ultrasonic sonicator, potentiostat (Princeton Applied Research Versastate4), X-ray diffractometer (Bruker AXS D8 Discover), UV-VIS-NIR spectrophotometer (Varian Cary 5000), I-V measurement system (HP-4145B), and furnace for annealing. Materials include ITO substrates, copper sulfate, antimony sulfate, lactic acid, sodium hydroxide, Pt mesh, Ag/AgCl reference electrode, Na2SO4, potassium phosphate.
4：Experimental Procedures and Operational Workflow:
Substrates were cleaned, electrodeposition performed at -
5：5 V and 333 K with pH 10, using different Sb concentrations. Post-thermal annealing in N2 at various temperatures. Characterization involved XRD, I-V measurements, transmittance, and photoelectrochemical analysis using LSV, chronoamperometry, and EIS. Data Analysis Methods:
Data analyzed using ZSimpWin software for EIS, and calculations for charge density, electrical resistivity, flat band potential, and carrier concentration from Mott-Schottky plots.
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