研究目的
Investigating the effect of monatomic and molecular ion irradiation on time-resolved photoluminescence decay in GaN, focusing on how collision cascade density influences damage accumulation and luminescence quenching.
研究成果
Heavy monatomic and molecular ion irradiation enhances damage formation and photoluminescence quenching in GaN due to increased collision cascade density. Carrier diffusion plays a key role in shortening PL decay times in shallow implantation scenarios. The results provide insights into defect engineering for optoelectronic applications.
研究不足
The study is limited to specific ion types and energies (keV range), and the findings may not generalize to other materials or irradiation conditions. The theoretical model assumes certain boundary conditions that might not capture all complexities.
1：Experimental Design and Method Selection:
The study involved irradiating GaN epilayers with keV monatomic (F, P, Ag) and molecular (PF4) ions to investigate damage formation and photoluminescence decay. Theoretical models for carrier diffusion and surface recombination were employed to analyze results.
2：Sample Selection and Data Sources:
2 μm thick (0001) epitaxial GaN films grown by MOVPE on sapphire substrate, with a Si-doped upper layer, were used. Samples were irradiated using a 500 keV HVEE implanter.
3：List of Experimental Equipment and Materials:
Equipment included a 500 keV HVEE implanter, RBS/C setup with 0.7 MeV He++ ions, spectro-fluorimeter 'Panorama-02', double cascade compressed Nd-YAG laser, Hamamatsu C-979 streak camera, and filters UFS-2 and ZhS-17. Materials included GaN samples and various ions for implantation.
4：7 MeV He++ ions, spectro-fluorimeter 'Panorama-02', double cascade compressed Nd-YAG laser, Hamamatsu C-979 streak camera, and filters UFS-2 and ZhS-Materials included GaN samples and various ions for implantation. Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Irradiation was performed at room temperature, 7° off normal to minimize channeling. Damage was measured by RBS/C, PL spectra were acquired with mercury lamp excitation, and time-resolved PL was measured using a laser and streak camera. Data analysis involved TRIM simulations for DPA calculations and fitting decay curves.
5：Data Analysis Methods:
Data were analyzed using TRIM code for vacancy calculations, RBS/C algorithms for damage profiles, and exponential fitting for PL decay times. Theoretical models based on diffusion equations were applied.
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streak camera
C-979
Hamamatsu
Used to measure the PL signal with temporal resolution for decay analysis.
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HVEE implanter
500 keV
HVEE
Used for ion implantation of GaN samples with monatomic and molecular ions.
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spectro-fluorimeter
Panorama-02
Used to measure PL spectra in the range of 350–600 nm with mercury lamp excitation.
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Nd-YAG laser
double cascade compressed
Provided 2 ps optical pulses for time-resolved PL measurements.
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light filter
UFS-2
Placed in the pumping channel to suppress pumping light effects.
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light filter
ZhS-17
Utilized in the signal registration channel to suppress pumping light effects.
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TRIM code
SRIM-2006.02
Software used for calculating displacement per atom (DPA) values and damage simulations.
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