研究目的
Investigating the gas sensing characteristics of the FET-type gas sensor with an inkjet-printed WS2 sensing layer for various target gases.
研究成果
The FET-type gas sensor with inkjet-printed WS2 sensing layer shows high selectivity for NO2 gas, with significant responses to NO2 and H2S but negligible responses to NH3 and CO2. The sensor's performance is attributed to the electron affinity of NO2, making it a promising candidate for gas sensing applications with potential for integration with CMOS technology.
研究不足
The gas sensor does not fully recover after each gas exposure cycle, indicating potential issues with reversibility. The study is limited to four target gases and may not generalize to other gases. The fabrication process is complex and requires specialized equipment.
1：Experimental Design and Method Selection:
The study uses a pMOSFET-type sensor with a horizontal floating-gate (FG) interdigitated with control-gate (CG) to avoid contamination. WS2 nanoparticles are exfoliated and printed via inkjet printing as the sensing material. Gas sensing measurements are conducted at 100°C using a test chamber with mass flow controllers to mix gases.
2：Sample Selection and Data Sources:
A 6-inch n-type Si wafer is used for device fabrication. WS2 micro-powders are purchased and exfoliated into nanoparticles. Target gases include NO2, H2S, NH3, and CO2 at concentrations from 5 to 10 ppm.
3：List of Experimental Equipment and Materials:
Equipment includes an ultrasonicator (SONICS VCX-750), centrifuge (DAIHAN WiseSpin CF-10), Agilent B1500A semiconductor parameter analyzer, mass flow controllers, and a test chamber. Materials include WS2 micro-powders, NaPF6, DEGDME, DMF, IPA, and SU-8 photoresist.
4：Experimental Procedures and Operational Workflow:
Fabrication involves LOCOS process, gate oxide growth, poly-Si deposition for FG, passivation layer formation, metal electrode deposition, SU-8 patterning, inkjet printing of WS2, and annealing. Gas sensing measurements involve injecting gases into the chamber and monitoring drain current changes with the Agilent B1500A.
5：0A. Data Analysis Methods:
5. Data Analysis Methods: Responses are calculated using the formula S(%) = (|ID,gas - ID,air| / ID,air) * 100. Characterization includes SEM, Raman spectroscopy, and AFM for WS2 nanoparticles.
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semiconductor parameter analyzer
B1500A
Agilent
Used to measure the gas sensing characteristics, including drain current changes in the FET-type sensor.
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ultrasonicator
VCX-750
SONICS
Used to exfoliate WS2 micro-powders into nanoparticles through ultrasonication process.
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centrifuge
WiseSpin CF-10
DAIHAN
Used to separate exfoliated WS2 nanoparticles from the dispersion by centrifugation.
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mass flow controller
Used to control the concentration of target gases by mixing with reference air in the test chamber.
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scanning electron microscope
Used to characterize the exfoliated WS2 nanoparticles by obtaining SEM images.
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Raman spectrometer
Used to analyze the phase identity of WS2 nanoparticles through Raman spectroscopy.
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atomic force microscope
Used to image and measure the size distribution of WS2 nanoparticles.
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