研究目的
To enhance the conductivity and transparency of AZO films for use as source/drain electrodes in thin-film transistors without thermal annealing, and to achieve ohmic contact with the semiconductor layer.
研究成果
PLD-fabricated AZO films exhibit superior electrical, optical, and surface properties compared to PVD films, enabling high-performance transparent TFTs with excellent mobility, on/off ratio, subthreshold swing, and stability. The low contact resistance and high transparency make them suitable for transparent displays, offering a non-toxic alternative to ITO.
研究不足
The study is limited to room temperature deposition without thermal annealing, which may not achieve the lowest possible resistivity compared to annealed films. The scalability of PLD for large-scale production is mentioned as a potential advantage but not thoroughly tested. The use of specific equipment and materials may restrict reproducibility in other labs.
1：Experimental Design and Method Selection:
The study compares AZO films deposited by pulsed laser deposition (PLD) and physical vapor deposition (PVD) at room temperature. PLD is chosen for its high laser energy and absence of ion damage, aiming to improve film quality.
2：Sample Selection and Data Sources:
AZO films (80 nm thick) are deposited on glass substrates with a composition of Al2O3:ZnO = 2:98 wt%.
3：List of Experimental Equipment and Materials:
Equipment includes RF magnetron sputtering system (Kurt J. Lesker), PLD system (details not fully specified, but uses KrF laser with 248 nm wavelength), XRD (PANalytical), AFM (Multimode 8, Bruker), Hall measurement system, UV-Vis spectrophotometer, XPS (Thermo Fisher Scientific). Materials include glass substrates, AZO targets, ITO for gate electrodes, SiO2 for gate insulator, IGZO and Al2O3 for active layer.
4：Experimental Procedures and Operational Workflow:
AZO films are deposited by PVD (Ar atmosphere, 1 mtorr pressure, 80 W power) and PLD (O2 flow rate 0 sccm, pulsing energy 400 mJ, repeating rate 5 Hz). TFTs are fabricated with bottom-gate structure: ITO gate electrodes and SiO2 gate insulator deposited by PVD and PECVD, active layer of IGZO (
5：5 nm) and Al2O3 (5 nm) deposited by sputtering, and AZO S/D electrodes patterned by shadow masks. Characterization involves XRD, AFM, Hall, UV, XPS measurements, and electrical testing of TFTs. Data Analysis Methods:
Data analyzed using standard formulas for resistivity, Hall mobility, optical band gap (using Tauc plot), contact resistance (using transfer length method), and statistical comparison of film and device parameters.
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