摘要： Semiconductor nanowires are a class of materials that recently have gained increasing interest in solar cell applications and light emitting devices. Finding reproducible processing conditions is fundamental for their future mass production. In this work, the stability of individual epitaxial GaAs nanowires (NWs) under molecular beam epitaxy (MBE) processing conditions is studied by means of a time-resolved in-situ micro X-ray diffraction (XRD) method and scanning electron microscopy. Our proposed micro XRD method is a non-destructive characterization technique where individual nano-objects of different dimensions, crystal orientations, and structures are detectable under MBE processing conditions. NWs were grown by self-catalyzed MBE onto pre-patterned Si(111) substrate. When exposed to MBE processing conditions at 610 °C without supply of source material, or with only arsenic supply, we observe evaporation from the facets with no indication of gallium droplet formation. Furthermore, the NWs, which are initially grown perpendicular to the substrate surface become angularly unstable i.e. the NWs tilt and eventually lie down on the substrate surface. Before falling down, our micro XRD data evidenced vibrations/bending of the NWs. Interestingly, when exposed to the original growth conditions which include gallium and arsenic supply, the vibrations/bending are suppressed and the tilting can be reversed. The findings in this paper can also provide insights towards engineering of self-catalyzed GaAs NW growth by removal of parasitic growth objects which inevitably grow together with NWs.