1：Experimental Design and Method Selection:

The study uses electronic Raman scattering (ERS) spectroscopy to probe interactions between impurities in silicon. Measurements were performed on commercially sourced single crystal silicon wafers doped with donors (P, Sb, As) and acceptors (B) at various concentrations. The experimental design includes using near-infrared (NIR) and visible wavelength excitation to compare ERS signals above and below the indirect band gap of silicon.

2：Sample Selection and Data Sources:

Samples include boron acceptors and phosphorus, antimony, or arsenic donors over a wide concentration range, as listed in Table 1 of the paper. Samples were commercially sourced and used without further treatment.

3：List of Experimental Equipment and Materials:

Equipment includes a Renishaw Invia Reflex confocal micro-Raman spectrometer with a liquid nitrogen cooled Princeton Instruments OMA V InGaAs array detector for NIR measurements, and for visible measurements, the same instrument reconfigured or a Jobin Yvon Dilor XY micro-Raman spectrometer with a silicon CCD detector. A Janis ST-500 liquid helium flow cryostat was used for cooling. Materials include doped silicon wafers and conductive silver paste.

4：Experimental Procedures and Operational Workflow:

Measurements were performed in backscattering geometry with laser excitation at 1064 nm for NIR and 488 nm,

5：5 nm, or 532 nm for visible wavelengths. Samples were cooled to cryogenic temperatures (around 2 K), and laser powers were controlled to minimize heating. Spectra were collected and analyzed for ERS, phonon Raman, and photoluminescence features. Data Analysis Methods:

5 Data were analyzed by measuring peak positions, shifts, and broadening of ERS transitions. The energy shifts were modeled as a function of mean impurity separation using an exponential function based on wavefunction overlap.