研究目的
To demonstrate a 16-channel silicon-on-insulator-based wavelength division multiplexer/demultiplexer with dual-tunable functions for peak wavelength and output optical power tuning, addressing issues of wavelength drift and power imbalance in dense wavelength division multiplexing systems.
研究成果
The dual-tuning wavelength division multiplexer/demultiplexer successfully integrates wavelength and power tuning functions on an SOI platform, with measured performance metrics including insertion loss of 3.7–5.7 dB, crosstalk of 7.5–9 dB, wavelength tunability of 1.058 nm at 271.2 mW, and power attenuation up to 20 dB at 144.07 mW. Future work should focus on reducing crosstalk through structural optimizations and lowering power consumption by increasing modulation length or using series structures.
研究不足
High crosstalk (7.5 dB–9 dB) due to beam defocusing and phase errors; relatively high power consumption for VOAs (144.07 mW for 20 dB attenuation) compared to some reported devices; fabrication process may have dimensional variations affecting performance; potential for optimization in heater and VOA structures to reduce power consumption and improve efficiency.
1：Experimental Design and Method Selection:
The device integrates an arrayed waveguide grating (AWG) for multiplexing/demultiplexing, a heater for thermo-optic wavelength tuning, and variable optical attenuators (VOAs) based on p–i–n carrier injection for power tuning. Theoretical models include grating diffraction equations for AWG, thermo-optic effect for wavelength shift, and plasma dispersion effect for attenuation.
2：Sample Selection and Data Sources:
Fabricated on a silicon-on-insulator (SOI) platform with specific dimensions (e.g., 220 nm top silicon thickness, 500 nm waveguide width). Data from experimental measurements of transmission spectra, wavelength shift, attenuation, and response times.
3：List of Experimental Equipment and Materials:
SOI wafers, deep ultraviolet lithography (DUVL) system, inductively coupled plasma (ICP) etcher, boron and phosphorus for doping, TiN for heaters, Al for electrodes, SiO2 for cladding, optical fibers for coupling, and measurement setups for optical and electrical characterization.
4：Experimental Procedures and Operational Workflow:
Fabrication involved DUVL and ICP etching for waveguides, ion implantation for doping, annealing, SiO2 deposition, TiN heater fabrication, Al electrode deposition. Testing included applying voltages to heaters and VOAs, measuring insertion loss, crosstalk, wavelength shift, attenuation, and dynamic response.
5：Data Analysis Methods:
Analysis of transmission spectra to determine insertion loss and crosstalk; calculation of wavelength shift and modulation efficiency from applied power; linear fitting for attenuation vs. current; measurement of rise/fall times from pulse responses.
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