研究目的
To investigate the use of a new electrode structure of reduced graphene oxide/Au (RGO/Au) on poly-crystalline diamond films (PCDs) for improving ohmic contact and enhancing the performance of α particle detectors, compared to conventional Ti/Pt/Au electrodes.
研究成果
The RGO/Au electrode structure significantly reduces contact resistance and improves the performance of α particle detectors based on PCDs, demonstrating higher photocurrent and better energy resolution compared to Ti/Pt/Au electrodes. This provides a feasible method for enhancing detector performance, with potential applications in radiation detection and high-frequency electronics. Future work should focus on optimizing diamond and graphene quality and fabrication processes.
研究不足
The study uses poly-crystalline diamond films, which have grain boundaries that limit energy resolution compared to single-crystal diamond. The RGO film had multiple layers and potential gaps due to rough PCD surfaces, which could be optimized. The energy resolutions achieved (11.9% and 24%) are not as good as those for single-crystal detectors (<2%). Further research is needed on synthetic graphene growth on single-crystal diamond to improve quality and contact properties.
1：Experimental Design and Method Selection:
The study involved depositing (111)-oriented poly-crystalline diamond films (PCDs) on Si substrates using microwave plasma chemical vapor deposition (MPCVD) technology. The new electrode structure of reduced graphene oxide (RGO)/Au was fabricated and compared to a conventional Ti/Pt/Au electrode. The circular transmission line model (CTLM) was used to measure contact resistances. Detectors were fabricated and tested under α particle irradiation from a 241Am source.
2：Sample Selection and Data Sources:
PCDs were grown on Si substrates with specific dimensions (2x2x0.5 mm3). Graphene oxide (GO) solution was purchased from Suzhou Tanfeng Graphene Tech. Co., Ltd. Samples were prepared with different electrode structures (RGO/Au and Ti/Pt/Au).
3：5 mm3). Graphene oxide (GO) solution was purchased from Suzhou Tanfeng Graphene Tech. Co., Ltd. Samples were prepared with different electrode structures (RGO/Au and Ti/Pt/Au). List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: MPCVD system (ARDIS-100), spinning coater, quartz tube furnace, E-beam evaporator, photolithography equipment, SEM (JEOL LTD JSM-7500F), XRD (D/MAX 2200 diffractometer), Raman spectrometer (JY, HR800UV), charge pre-amplifier (Ortec 142IH), shaping amplifier (Ortec 575A), multichannel analyzer (Ortec Trump-PCI-2K), Keithley 2400 semiconductor characterization system, 241Am α particle source.
4：Experimental Procedures and Operational Workflow:
PCDs were deposited, treated with mixed acid and annealed. GO was spin-coated and reduced to RGO. Electrodes (Au or Ti/Pt/Au) were deposited via E-beam evaporation. CTLM structures were created using photolithography. Detectors were fabricated and annealed. Electrical and radiation response measurements were conducted.
5：Data Analysis Methods:
Contact resistances were calculated using CTLM equations. Dark current, photocurrent, and energy resolution were measured and compared. Data were analyzed using standard semiconductor characterization and spectroscopy techniques.
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SEM
JSM-7500F
JEOL LTD
Used for observing cross-section and surface morphology of PCDs.
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Raman spectrometer
HR800UV
JY
Used for studying composition of grown PCDs and RGO, excited by 514.5 nm wavelength laser.
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Semiconductor characterization system
2400
Keithley
Used to measure current-voltage characteristics of detectors.
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MPCVD system
ARDIS-100
Used for depositing poly-crystalline diamond films on Si substrates.
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XRD
D/MAX 2200 diffractometer
Used for analyzing texture orientation of grown PCDs with Cu Kα radiation.
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Charge pre-amplifier
142IH
Ortec
Part of signal analyzing facilities for pulse height spectrum characterization.
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Shaping amplifier
575A
Ortec
Part of signal analyzing facilities with a 2.5 μs shaping time.
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Multichannel analyzer
Trump-PCI-2K
Ortec
Used for multichannel analysis in signal characterization.
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α particle source
241Am
Source of 5.5 MeV α particles for irradiation tests.
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GO solution
Suzhou Tanfeng Graphene Tech. Co., Ltd.
Purchased graphene oxide solution used for fabricating RGO on PCD surfaces.
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