摘要： The interfacial layer in organic solar cells (OSCs) can be an important boosting factor for improving device efficiency and stability. Herein, we provide a facile and cost-effective approach to form uniform molybdenum oxide (MoO3) film with desirable stability, based on solution processing at low temperature by simplified precursor solution synthesis. The solution-processed MoO3 (SM) film, with oxygen vacancies induced by the hydroxyl group, functions as an efficient anode interfacial layer in conventional OSCs. The hole transporting performance of SM is well demonstrated in PBDB-T:ITIC OSCs exhibiting over 10% of PCE. The enhanced device performance of SM-based OSCs over that of conducting polymer, PEDOT:PSS, is investigated by analyzing the morphology, electronic state, and electrical conductivity of such hole transporting layer, as well as the charge dynamics in the completed devices. Furthermore, the high stability of the SM films in OSCs is examined under various environmental conditions, including long-term and thermal stability. In particular, SM-based PBDB-T:PC71BM OSCs, maintain over 90% of their initial cell performance over 2,500 h under inert conditions. Our study shows that solution-processed metal oxides can be a viable interfacial layer with high functionality and versatility, overcoming the drawbacks of conventionally adopted conducting polymer interlayers.