研究目的
To design a distributed amplifier based on monolayer graphene field effect transistors for RF and microwave applications, leveraging the high carrier mobility of graphene to overcome limitations of conventional amplifiers.
研究成果
A small-signal model for monolayer GFET was developed and used to design a distributed amplifier with 8dB gain, DC-5GHz bandwidth, and good return loss. While performance is inferior to CMOS, graphene's potential for improvement in mobility could enable future advancements up to THz operation.
研究不足
The GFET technology currently has low gain and bandwidth compared to CMOS, and the model is based on simulations without experimental validation. Carrier mobility in GFETs is reduced by substrate and dielectric effects, limiting performance.
1：Experimental Design and Method Selection:
The study involves developing a compact circuit-level model for GFETs based on drift-diffusion transport theory, implemented in Verilog-A for simulation in ADS tools. A distributed amplifier topology is chosen for broadband amplification.
2：Sample Selection and Data Sources:
The model uses parameters for a GFET with 180nm channel length and 1μm width, based on theoretical equations and prior literature.
3：List of Experimental Equipment and Materials:
Advanced Design System (ADS) software for circuit simulation; no physical equipment is mentioned as it is a simulation-based study.
4：Experimental Procedures and Operational Workflow:
The GFET model is coded in Verilog-A and integrated into ADS. A four-stage distributed amplifier is designed and optimized using ADS tools to achieve specific S-parameters and performance metrics.
5：Data Analysis Methods:
Simulation results are analyzed for gain, bandwidth, return loss, noise figure, and power dissipation, with comparisons to CMOS technology.
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