研究目的
To analyze the influence of an electrically passive (isovalent) silicon impurity on the Hall mobility of current carriers in n-Ge and to study the Hall effect in germanium doped with rare-earth elements La, Pr, and Nd.
研究成果
The presence of electrically passive silicon impurity in n-Ge significantly reduces charge carrier mobility at 77 K due to additional scattering by neutral centers and lattice imperfections. Rare-earth element impurities also reduce mobility at 77 K, likely due to complexation with passive impurities like oxygen. These findings highlight the importance of impurity interactions in semiconductor properties and suggest avenues for further investigation into complexation effects.
研究不足
The study is limited by the nonuniform distribution of silicon impurity in the crystals due to intracrystalline segregation, which may affect the monotonicity of mobility reduction. Additionally, the lack of literature on Hall coefficient dependence on magnetic field strength in germanium with silicon impurity complicates data processing. The effects of rare-earth element impurities require further physical and chemical research for unambiguous conclusions.
1：Experimental Design and Method Selection:
The study involved comparative experiments on germanium specimens doped with antimony (Sb) alone and with Sb plus silicon (Si) or rare-earth elements (La, Nd, Pr). Hall effect and resistivity measurements were conducted at 300 K and 77 K in a magnetic field of 2340 Oe to investigate charge carrier mobility and scattering mechanisms.
2：Sample Selection and Data Sources:
Specimens were fabricated from ingots of n-Ge single crystals, with some doped only with Sb and others with Sb plus Si or rare-earth elements. The specimens were cut and prepared with specific crystallographic orientations for measurements.
3：List of Experimental Equipment and Materials:
Equipment included a setup for Hall effect and resistivity measurements, a magnetic field source (strength 2340 Oe), and materials such as germanium crystals, impurities (Sb, Si, La, Nd, Pr), tin for soldering contacts, hydrogen peroxide for etching, and distilled water for rinsing.
4：Experimental Procedures and Operational Workflow:
Specimens were polished, etched in boiling 30% hydrogen peroxide for 2 minutes, rinsed with distilled water, and contacts were soldered with pure tin. Resistance of contacts was tested before measurements. Measurements of resistivity (ρ) and Hall coefficient (RH) were performed at 300 K and 77 K with H = 2340 Oe.
5：Data Analysis Methods:
Data were analyzed to compute charge carrier concentration (ne) and mobility (μ) from ρ and RH values. Results were compared between different doping conditions to assess the impact of impurities on mobility.
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