研究目的
To conduct a quantitative comparison study of CMOS-based Double Gate RADFET, Gate All Around RADFET, and Junctionless Double Gate RADFET dosimeters for gamma radiation dosimetry applications, focusing on their electrical performance under radiation.
研究成果
The simulation results demonstrate that the Junctionless Double Gate RADFET (JL DG RADFET) shows improved performance in subthreshold parameters, threshold voltage shift, sensitivity, and Ion/Ioff current ratio compared to DG RADFET and GAA RADFET under gamma radiation. The threshold voltage shift increases linearly with absorbed dose, and higher doping concentrations in JL DG RADFET affect the Ion/Ioff ratio. This suggests JL DG RADFET is a promising candidate for gamma radiation dosimetry applications.
研究不足
The study is based on simulations using the Sentaurus TCAD tool, which may not fully capture real-world variations and physical effects. It focuses on moderate dose rates and specific device parameters, potentially limiting generalizability to other conditions or materials. Experimental validation with physical devices is not included.
1：Experimental Design and Method Selection:
The study uses simulation-based methods with the Sentaurus 3D Device simulator to model gamma radiation effects. Theoretical models include the gamma radiation model, drift-diffusion model, band gap narrowing, Old slot boom model, Philips unified mobility model, high field saturation model, and Shockley-Read Hall (SRH) generation recombination model.
2：Sample Selection and Data Sources:
Simulated devices include DG RADFET, JL DG RADFET, and GAA RADFET structures optimized for specific threshold voltages. Device parameters are defined in tables (e.g., Table 1).
3：1). List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: The primary tool is the Sentaurus 3D Device simulator (software). No physical equipment is mentioned; it's a simulation study.
4：Experimental Procedures and Operational Workflow:
Devices are simulated under gamma radiation with dose rates from 100 Gy/sec to 1000 Gy/sec. Electrical characteristics such as drain current, surface potential, threshold voltage, and sensitivity are analyzed. Simulations involve varying gate work function, doping concentrations, and dose rates.
5：Data Analysis Methods:
Data is analyzed to extract parameters like threshold voltage shift (ΔVth), Ion/Ioff current ratio, and sensitivity. Comparisons are made between different device architectures.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
