研究目的
To develop high-performance lead-free piezoelectric thin films as replacements for lead-based films, specifically demonstrating outstanding piezoelectric performance in KNSN-BNKZ0.05 films competitive to PZT films, and understanding the underlying mechanisms for their superior properties.
研究成果
Outstanding piezoelectric performance with effective strain coefficient up to 250 pm V?1 was achieved in lead-free KNSN-BNKZ0.05 films, competitive with PZT films. This is attributed to oriented nanophase coexistence with gradual polarization rotation reducing domain wall energy, and increased thickness reducing mechanical clamping and improving domain wall mobility. The work provides a viable lead-free alternative for piezoelectric applications.
研究不足
The orientation degree decreased with increasing film thickness due to reduced significance of surface energy anisotropy and more severe K loss. The study is limited to specific film compositions and substrates; scalability and long-term stability were not addressed.
1：Experimental Design and Method Selection:
A chemical solution deposition method was used to fabricate [100]-oriented KNSN-BNKZ0.05 films on Pt/TiO2/SiO2/Si substrates, with precursor K excess introduced to compensate for volatile losses and achieve single perovskite phase. The effects of thickness, orientation, and structure on performance were investigated.
2：05 films on Pt/TiO2/SiO2/Si substrates, with precursor K excess introduced to compensate for volatile losses and achieve single perovskite phase. The effects of thickness, orientation, and structure on performance were investigated.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: Films with thicknesses ranging from 0.68 to 2.70 μm were prepared. Characterization included XRD, GIXD, STEM, EDS, ferroelectric testing, and piezoelectric measurements.
3：68 to 70 μm were prepared. Characterization included XRD, GIXD, STEM, EDS, ferroelectric testing, and piezoelectric measurements.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Precursor chemicals (e.g., potassium acetate, sodium acetate, bismuth acetate, antimony ethoxide, zirconium acetylacetonate, niobium ethoxide), solvents (2-MOE), modifiers (MEA, DEA, EDTA), Pt/TiO2/SiO2/Si substrates, Au electrodes.
4：Experimental Procedures and Operational Workflow:
Precursor solution preparation in glove box, spin coating at 3000 rpm, drying at 150°C for 3 min, pyrolysis at 570°C for 5 min, annealing at 700°C for 10 min with fast heating. Electrical properties measured after Au electrode sputtering.
5：Data Analysis Methods:
XRD for phase structure, Lotgering factor for orientation degree, sin2ψ method for stress measurement, ferroelectric hysteresis loops, LSV for piezoelectric coefficient, STEM for atomic-scale imaging, DFT calculations for surface energies.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
