1：Experimental Design and Method Selection:

The study employed a spray pyrolysis technique to deposit V2O5 thin films at a substrate temperature of 300°C, followed by post-annealing at temperatures of 300°C, 400°C, and 500°C for one hour at a constant heating rate of 5°C/min. The rationale was to investigate how annealing temperature influences crystallization and material properties.

2：Sample Selection and Data Sources:

Ultrasonically cleaned glass substrates (Blue star, India) were used. The films were prepared with optimized parameters: nozzle-to-substrate distance of 30 cm, substrate temperature of 300°C, and

3：1 M ammonium vanadate in water as the precursor solution. List of Experimental Equipment and Materials:

Equipment included: Bruker D8 Advance X-ray diffractometer (XRD) with Cu Kα radiation, UV-Vis 3000 spectrophotometer (Lab India Analytical Instruments), Renishaw In Via micro Raman spectrometer with 532 nm laser, Carl ZEISS EVO 18 scanning electron microscope (SEM), and HMS-3000 Hall Effect measurement system (ECOPIA) with a

4：5 T magnetic field. Materials included glass substrates and ammonium vanadate solution. Experimental Procedures and Operational Workflow:

Films were deposited via spray pyrolysis, annealed at specified temperatures, and then characterized. XRD was used for structural analysis, SEM for morphology, UV-Vis for optical absorbance, Raman spectroscopy for phase confirmation, and Hall Effect for electrical properties. All measurements were conducted at room temperature unless specified.

5：Data Analysis Methods:

Crystallite size was estimated using Scherrer's equation from XRD data. Optical band gap was calculated from the extrapolation of (αhυ)2 versus hυ plots. Electrical parameters like carrier density and resistivity were derived from Hall Effect measurements.