研究目的
Investigating the synthesis and properties of heterochiral supramolecular coordination networks (SCNs) for high-performance optoelectronics, focusing on chiral self-discrimination, photochromic behavior, and enhancement of conductivity and photoresponsivity through doping.
研究成果
Heterochiral AlaNDI-Cd SCNs are thermodynamically stable and exhibit thin morphologies suitable for optoelectronic devices. They show photochromic and photoswitchable properties due to radical formation. Hydrazine doping significantly enhances conductivity (2500-fold increase) and photoresponsivity (R = 41.8 A W?1, EQE = 1.4 × 10?%), attributed to reduced energy gap and 'through-space' charge transport. This provides a simple method to improve CPs/MOFs for micro-/nano-optoelectronic applications.
研究不足
The conductivity enhancement from hydrazine doping is reversible and decreases in ambient conditions, requiring controlled environments for stability. The research is focused on specific SCNs with naphthalene diimide ligands, and scalability for practical applications may need further optimization. The study primarily addresses micro-/nano-optoelectronics, and broader applicability to other CPs/MOFs may require additional validation.
1:Experimental Design and Method Selection:
The study involved synthesizing homochiral and heterochiral AlaNDI-Cd SCNs via solvothermal reactions using naphthalene diimide enantiomers and cadmium iodide. Chirality was used as a tuning parameter to control morphologies. Doping with hydrazine vapor was employed to enhance conductivity and photoresponsivity. Theoretical studies included DFT calculations and Monte Carlo simulations to understand formation energies, electronic structures, and adsorption mechanisms.
2:Sample Selection and Data Sources:
Samples included homochiral (R)- and (S)-AlaNDI-Cd, and heterochiral (Rac)-AlaNDI-Cd micro-/nanocrystals synthesized from enantiopure ligands and racemic mixtures. Data were obtained from material analyses (e.g., SEM, UV-Vis, ESR, XRD) and device measurements.
3:List of Experimental Equipment and Materials:
Equipment included stainless-steel tubes with Teflon liners for solvothermal reactions, SEM for morphology characterization, UV-Vis-NIR spectrophotometers (Cary 5000, Cary 6000i), spectrofluorometer (FP-6500, JASCO), spectropolarimeter (J-815, JASCO), ESR spectrometer (Bruker Biospin A200), single crystal X-ray diffractometer (Bruker APEX II QUAZAR), elemental analyzer (Elementar vario MICRO cube), and parametric analyzer (Keithley 4200-SCS). Materials included CdI2, H2AlaNDI ligands, DMF, hydrazine, silicon wafers with SiO2, Cr/Au electrodes.
4:Experimental Procedures and Operational Workflow:
Synthesis involved stirring CdI2 and ligands in DMF, sealing in tubes, and heating at 120°C for 72 h. Devices were fabricated by drop-casting dispersed crystals on pre-patterned electrodes and annealing. Electrical measurements were conducted in ambient and N2 conditions. Doping was performed by exposing devices to hydrazine vapor for 5 min. Material analyses included UV-Vis, CD, ESR, TGA, BET, FT-IR, PXRD, and single crystal XRD.
5:Data Analysis Methods:
Electrical conductivity was estimated using the two-probe method. Rise and decay times were fitted using exponential equations. DFT calculations used DMol3 with PBE functional and DNP basis set for energy and DOS analysis. Monte Carlo simulations used Sorption program with Universal forcefield for adsorption studies.
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UV-Vis-NIR Spectrophotometer
Cary 5000
Agilent
Measurement of absorption spectra for ligands and SCNs
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UV-Vis-NIR Spectrophotometer
Cary 6000i
Agilent
Measurement of absorption spectra for SCNs
Cary 60 UV-Vis Spectrophotometer
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Spectrofluorometer
FP-6500
JASCO
Recording of photoluminescence spectra
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Spectropolarimeter
J-815
JASCO
Measurement of circular dichroism results
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ESR Spectrometer
A200
Bruker Biospin
Measurement of electron spin resonance spectra
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Single Crystal X-ray Diffractometer
APEX II QUAZAR
Bruker
Collection of single crystal X-ray diffraction data
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Elemental Analyzer
vario MICRO cube
Elementar
Performance of elemental analyses
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Parametric Analyzer
4200-SCS
Keithley
Measurement of current-voltage characteristics
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Silicon Wafer
n-type, < 0.004 Ω·cm
Substrate for electronic devices
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Electrodes
Cr/Au (4/40 nm)
Conductive electrodes for device fabrication
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