研究目的
Investigating the giant negative electrocaloric effect in lead-free relaxor ferroelectric thin films for next-generation refrigeration and energy storage applications.
研究成果
The research demonstrates a giant negative electrocaloric effect in lead-free BCT–BMT thin films, achieving a maximum ΔT of ≈?42.5 K, comparable to the best positive EC effects. This is attributed to an electric-field induced structural phase transition from nanoscale tetragonal and orthorhombic to rhombohedral phases along the [111] direction. Additionally, the film exhibits high energy density and power density, making it a promising multifunctional material for refrigeration and energy storage. The findings pave the way for efficient, lead-free solid-state cooling devices and suggest future improvements through doping and thickness optimization.
研究不足
The study is limited to thin films with specific composition and substrate, which may not generalize to other materials or bulk forms. The negative EC effect mechanism, while attributed to phase transition, requires further theoretical validation. Practical applications are constrained by the need for high electric fields and potential issues with film thickness scalability and thermal stability at higher temperatures.
1:Experimental Design and Method Selection:
The study focuses on fabricating 0.5(Ba0.8Ca0.2)TiO3–0.5Bi(Mg0.5Ti0.5)O3 (BCT–BMT) lead-free relaxor ferroelectric thin films using a sol–gel method on Pt(111)/TiOx/SiO2/Si substrates. The experimental design includes structural characterization, dielectric property measurements, and electrocaloric effect evaluation to understand the phase transition and its role in the negative EC effect.
2:5(Ba8Ca2)TiO3–5Bi(Mg5Ti5)O3 (BCT–BMT) lead-free relaxor ferroelectric thin films using a sol–gel method on Pt(111)/TiOx/SiO2/Si substrates. The experimental design includes structural characterization, dielectric property measurements, and electrocaloric effect evaluation to understand the phase transition and its role in the negative EC effect. Sample Selection and Data Sources:
2. Sample Selection and Data Sources: The thin film samples are prepared with specific chemical compositions, including excess Bi and Mg to avoid pyrochlore phases. Data are sourced from various characterization techniques applied to these films.
3:List of Experimental Equipment and Materials:
Equipment includes X-ray diffractometer (Rigaku 9 KW Smartlab), scanning electron microscope (FEI Sirion 200), transmission electron microscopes (Titan Cubed Themis G2300, JEOL JEM-2100F), scanning probe microscopes (Bruker Multimode 8, Asylum Research MFP-3D), Raman spectrometer (Horiba HR800), impedance analyzer (Agilent E4980A), ferroelectric tester (Radiant Technologies Precision Premier II), signal source (Agilent 81150A), digital oscilloscope (LeCroy HDO4104), and thermal controller (Linkam THMSG600). Materials include precursor chemicals like Bi(CH3COO)3, Ca(CH3COO)2, Ba(CH3COO)2, Mg(OC2H5)2, Ti(OCH(CH3)2)4, and substrates.
4:0). Materials include precursor chemicals like Bi(CH3COO)3, Ca(CH3COO)2, Ba(CH3COO)2, Mg(OC2H5)2, Ti(OCH(CH3)2)4, and substrates. Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The fabrication involves dissolving precursors, mixing solutions, spin-coating on substrates, drying, pyrolyzing, and annealing. Characterization steps include XRD for crystallinity, SEM and TEM for morphology, AFM and PFM for surface and domain analysis, Raman spectroscopy for phase identification, dielectric measurements, P–E loop measurements, and energy storage tests. Electrical properties are measured with top electrodes deposited by sputtering.
5:Data Analysis Methods:
Data analysis involves fitting dielectric permittivity with Lorentz-type relations, analyzing Raman spectra with multi-peak fitting, calculating EC effects using Maxwell relations, and evaluating energy density from P–E loops. Statistical models are used for relaxor behavior, and thermodynamic potentials are applied to understand phase transitions.
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X-ray diffractometer
9 KW Smartlab
Rigaku
Characterizing the crystallinity and phase structure of the thin film.
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Scanning electron microscope
Sirion 200
FEI
Examining the cross-sectional and surface morphology of the thin film.
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Transmission electron microscope
Titan Cubed Themis G2300
FEI
Studying the microstructure and nanodomains of the thin film.
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Transmission electron microscope
JEM-2100F
JEOL
Studying the microstructure and nanodomains of the thin film.
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Scanning probe microscope
Multimode 8
Bruker
Investigating the out-of-plane features and domain structures using PFM and AFM.
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Scanning probe microscope
MFP-3D
Asylum Research
Investigating the out-of-plane features and domain structures using PFM and AFM.
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Raman spectrometer
HR800
Horiba
Acquiring Raman scattering spectra for phase identification and analysis.
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Impedance analyzer
E4980A
Agilent
Measuring dielectric permittivity and loss with a perturbation voltage.
E4980A/E4980AL Precision LCR Meter
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Ferroelectric tester
Precision Premier II
Radiant Technologies
Obtaining polarization-electric field hysteresis loops and leakage currents.
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Signal source
81150A
Agilent
Used in charge/discharge experiments for energy storage measurements.
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Digital oscilloscope
HDO4104
LeCroy
Monitoring and recording signals during charge/discharge experiments.
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Thermal controller
THMSG600
Linkam
Controlling the sample temperature with high accuracy during measurements.
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DC bias source
4294A
Agilent
Applying and monitoring dc bias electric fields for Raman and XRD measurements.
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