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Successes and Issues in the Growth of Moad and MoSe2 on Ag(111) by the E-ALD Method
摘要： This paper explores the conditions for the electrodeposition of Moad (molybdenum adlayer) on Ag(111) from alkaline aqueous solution. Moreover, the first stages of the growth of MoSe2 are also presented, performing the deposition of Sead on the deposited Moad. The deposition of Moad on Sead/Ag(111) was also explored. MoSe2 is of interest due to its peculiar optoelectronic properties, making it suitable for solar energy conversion and nanoelectronics. In this study, electrodeposition techniques were exploited for the synthesis process as more sustainable alternatives to vacuum based techniques. The electrochemical atomic layer deposition (E-ALD) method emerges as a suitable technique to grow inorganic semiconductor thin films thanks to its fulfillment of the green energy predicament and a strict structural and morphological control, and this approach has gathered the attention of the scientific community. Indeed, E-ALD exploits surface limited reactions (SLRs) to alternate the deposition of chemically different atomic layers constituting a compound semiconductor. Thus, E-ALD is one of the most promising electrodeposition techniques for the growth of thin-film of compound semiconductors under a strict structural and morphological control. On this ground, E-ALD can be considered an ideal technique for the growth of 2D materials.
关键词： 2D materials,MoSe2,nanoelectronics,E-ALD
更新于2025-09-19 17:15:36
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Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide
摘要： We report on the fabrication of capacitively (AC) coupled n+-in-p pixel detectors on magnetic Czochralski silicon substrates. In our devices, we employ a layer of aluminium oxide (Al2O3) grown by atomic layer deposition (ALD) as dielectric and field insulator, instead of the commonly used silicon dioxide (SiO2). As shown in earlier research, Al2O3 thin films exhibit high negative oxide charge, and can thus serve as a substitute for p-stop/p-spray insulation implants between pixels. In addition, they provide far higher capacitance densities than SiO2 due to their high dielectric constant, permitting more efficient capacitive coupling of pixels. Furthermore, metallic titanium nitride (TiN) bias resistors are presented as an alternative to punch-through or poly-Si resistors. Devices obtained by the above mentioned process are characterized by capacitance–voltage and current–voltage measurements, and by 2 MeV proton microprobe. Results show the expected high negative charge of the Al2O3 dielectric, uniform charge collection efficiency over large areas of pixels, and acceptable leakage current densities.
关键词： Capacitive coupling,Al2O3,Atomic layer deposition (ALD),Pixel detector
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE Pulsed Power & Plasma Science (PPPS) - Orlando, FL, USA (2019.6.23-2019.6.29)] 2019 IEEE Pulsed Power & Plasma Science (PPPS) - 2D Simulations of the NS-Laser Shock Peening
摘要： We report on the impact of H2 high-pressure annealing (HPA) onto In0.7Ga0.3As MOSCAPs and quantum-well (QW) MOSFETs with Al2O3/HfO2 gate-stack. After HPA with process condition of 300 °C, H2 ambient and pressure of 20 atm, we observed notable improvements of the capacitance–voltage (CV) characteristics in InGaAs MOSCAPs with Al2O3/HfO2 gate-stack, such as reduction of equivalent-oxide-thickness and less frequency dispersion in the accumulation region. There was 20% improvement of the interfacial trap density ( Dit). Then, we incorporated the HPA process into the fabrication of sub-100-nm In0.7Ga0.3As QW MOSFETs, to investigate the impact of HPA process. After HPA process, the device with L g = 50 nm exhibits improved subthreshold-swing (SS) = 105 mV/decade, in comparison with SS = 130 mV/decade for the reference device without HPA process. Finally, we carried out reliability assessment under a constant-voltage-stress (CVS), and it turns out that the HPA process was effective in mitigating a shift of threshold voltage ((cid:2)VT ) during the CVS. These are attributed to the effective passivation of oxide traps in the high-k dielectric layer and interfacial traps, after HPA process in the H2 ambient.
关键词： interfacial trap density (Dit),subthreshold-swing (SS),high-pressure annealing,atomic layer deposition (ALD),InGaAs MOSFET
更新于2025-09-19 17:13:59
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P‐9.1: QD based color converter with DBR Structure and its application on Micro‐LED
摘要： An enhancement of light extraction efficiency of quantum dots (QD) (LEDs) with Bi-functional TiO2/Al2O3 distributed Bragg reflector (DBR) nanolaminate structure grown by atomic layer deposition (ALD) has been demonstrated. The DBRs were simulated and optimized with TFCalc, and they exhibited excellent and tunable optical properties, as well as reliable moisture barrier performance. These DBRs were integrated in the QD-LED, enabling an obvious increase in red emission and a strong decrease in blue light transmittance, which can achieve color conversion greatly. Furthermore, these DBRs can prolong the lifetime of QDs evidently by isolating the QDs from the moisture vapor. These results highlight the potential application of DBRs in the QLEDs and QD-LEDs.
关键词： atomic layer deposition (ALD),simulation,distributed Bragg reflector (DBR),water vapor transmission rates (WVTR),light extraction efficiency
更新于2025-09-19 17:13:59
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Local atomic structure of the GaN-side of the Al2O3/GaN interface revealed by X-ray absorption spectroscopy
摘要： The interface between a gate insulator (Al2O3) and a semiconductor (GaN) was investigated via surface-sensitive Ga K-edge extended X-ray absorption fine structure spectroscopy, achieved by detecting the Ga LMM Auger electrons originated from the Ga K-shell absorption. This GaN-side interface study was conducted on Al2O3 thin films formed via atomic layer deposition. The determined atomic structures revealed GaN crystalline changes and the formation of Ga–O bonds due to nitrogen annealing.
关键词： Aluminum oxide (Al2O3),Interface,Post-deposition annealing (PDA),Gallium nitride (GaN),Extended X-ray absorption fine structure (EXAFS),Atomic layer deposition (ALD)
更新于2025-09-19 17:13:59
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Device Structure and Passivation Options for the Integration of Scaled IGZO TFTs
摘要： The focus of this work is on the performance dependence of scaled the device structure and IGZO TFTs with variations semiconductor passivation scheme. TCAD simulation was used to provide insight on the details which establish the limits on electrostatic control. Dielectrics used for the gate and back-channel regions have been adjusted to overcome short-channel effects, along with required modifications in process recipes for PECVD passivation layers, oxygen ambient annealing, and ALD capping material. Scaled devices with channel lengths as small as L = 1 μm have been investigated and evaluated by the electrostatic behavior, and stability when subjected to thermal and bias stress. An optimized process and associated procedural details for scaled devices is presented, along with suggested options for further channel length reduction to submicron dimensions.
关键词： IGZO TFTs,scaling,TCAD simulation,electrostatic control,PECVD,short-channel effects,ALD,thermal stability,bias stress,passivation
更新于2025-09-16 10:30:52
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Plasma-assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells
摘要： Low-temperature atomic layer deposition (ALD) offers significant merits in terms of processing uniform, conformal and pinhole-free thin films, with sub-nanometer thickness control. In this work, plasma-assisted atomic layer deposition (ALD) of nickel oxide (NiO) is carried out by adopting bis-methylcyclopentadienyl-nickel (Ni(MeCp)2) as precursor and O2 plasma as co-reactant, over a wide table temperature range of 50–300 °C. A growth rate of 0.32 ? per cycle is obtained for films deposited at 150 °C with an excellent thickness uniformity on a 4 inch silicon wafer. Bulk characteristics of the NiO film together with its interfacial properties with a triple cation hybrid perovskite absorber layer are comprehensively investigated, with the aim of integrating NiO as hole transport layer (HTL) in a p–i–n perovskite solar cell (PSC) architecture. It is concluded that "key" to efficient solar cell performance is the post-annealing treatment of the ALD NiO films in air, prior to perovskite synthesis. Post-annealing leads to better wettability of the perovskite layer and increased conductivity and mobility of the NiO films, delivering an increase in short-circuit current density (Jsc) and fill factor (FF) in the fabricated devices. Overall, a superior 17.07% PCE is achieved in the post-annealed NiO-based PSC when compared to the 13.98% PCE derived from the one with pristine NiO.
关键词： plasma-assisted ALD,perovskite solar cells,atomic layer deposition,nickel oxide,hole transport layer
更新于2025-09-16 10:30:52
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Plasma enhanced atomic layer deposition of plasmonic TiN ultrathin films using TDMATi and NH3
摘要： Transition metal nitrides, like titanium nitride (TiN), are promising alternative plasmonic materials. Here we demonstrate a low temperature plasma‐enhanced atomic layer deposition (PE‐ALD) of non‐stoichiometric TiN0.71 on lattice‐matched and ‐mismatched substrates. The TiN was found to be optically metallic for both thick (42 nm) and thin (11 nm) films on MgO and Si <100> substrates, with visible light plasmon resonances in the range of 550–650 nm. We also demonstrate that a hydrogen plasma post‐deposition treatment improves the metallic quality of the ultrathin films on both substrates, increasing the ε1 slope by 1.3 times on MgO and by 2 times on Si (100), to be similar to that of thicker, more metallic films. In addition, this post‐deposition was found to tune the plasmonic properties of the films, resulting in a blue‐shift in the plasmon resonance of 44 nm on a silicon substrate and 59 nm on MgO.
关键词： optical properties,plasmonics,atomic layer deposition (ALD),thin film,titanium nitride
更新于2025-09-16 10:30:52
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3.4: Applications of TFE mask‐less technology for foldable AMOLED displays
摘要： Thin-film encapsulation (TFE) for foldable AMOLED display is necessary to have good reliability and excellent bendability. TFE mask induces particles easily and crack occurs in thick TFE layer during panel bending. We developed TFE with Al2O3 layer for high water-proof and very thin thickness, satisfying the requirement of reliability and bendability. The Al2O3 layer in TFE structure was deposited by low temperature atomic layer deposition (ALD) method，and we realized TFE mask-less process through adapting dry-etch parameters for Al2O3 etch, finding that BCl3 has very excellent dry-etch selectivity between inorganic layer (SiOx/SiNx/SiOxNy) and Al2O3. Besides, we also attempted to make the organic layer of TFE acted as etch mask, and it proved to be feasible, indicating that all the TFE masks could be taken out effectively. Moreover, we proved good optic and reliability characteristics of AMOLED display with mask-less TFE structure.
关键词： Atomic Layer Deposition (ALD),mask-less,Thin-Film Encapsulation (TFE),AMOLED
更新于2025-09-11 14:15:04
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TiO <sub/>2</sub> /WO <sub/>3</sub> Bilayer as Electron Transport Layer for Efficient Planar Perovskite Solar Cell with Efficiency Exceeding 20%
摘要： It is crucial to retard the carrier recombination and minimize the energy loss at the transparent electrode/electron transport layer (ETL)/perovskite absorber interfaces to improve the performance of the perovskite solar cells (PSCs). Here, a bilayered TiO2/WO3 film is designed as ETL by combining atomic layer deposition (ALD) technology and spin-coating process. The ALD-TiO2 underlayer fills the fluorine-doped tin oxide (FTO) valleys and makes the surface smoother, which effectively avoids the shunt pathways between perovskite layer and FTO substrate and thereby suppresses electron–hole recombination at the interface. Moreover, the presence of hydrophilic TiO2 underlayer is helpful in forming a uniform and compact WO3 layer which is beneficial for extracting electron from perovskite to ETL. Meanwhile, the lower valance band minimum level of TiO2 relative to WO3 can efficiently enhance the hole-blocking ability. By employing the optimized TiO2 (7 nm)/WO3 bilayer as ETL, the resulting cell exhibits an obviously enhanced power conversion efficiency of up to 20.14%, which is much better than the single WO3 or TiO2 ETL based device. This work is expected to provide a viable path to design ultrathin and compact ETL for efficient PSCs.
关键词： electron transport layer,perovskite solar cells,TiO2,WO3,ALD
更新于2025-09-11 14:15:04