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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • contrast stretch
  • CMOS image sensor
  • point-of-care (POC) diagnosis
  • bio-microfluidic imaging
应用领域
  • Optoelectronic Information Science and Engineering
机构单位
  • Xi’an University of Technology
183 条数据
?? 中文（中国） ▾

  • [IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Evaluation of Carrier Trapping in SiN <sub/>x</sub> Towards Ion Migration Measurements

    摘要： A low temporal read noise and high conversion gain reset-gate-less CMOS image sensor (CIS) has been developed and demonstrated for the first time at photoelectron-counting-level imaging. To achieve a high pixel conversion gain without fine or special processes, the proposed pixel has two unique structures: 1) coupling capacitance between the transfer gate and floating diffusion (FD) and 2) coupling capacitance between the reset gate and FD, for removing parasitic capacitances around the FD node. As a result, a CIS with the proposed pixels is able to achieve a high pixel conversion gain of 220 μV/e? and a low read noise of 0.27e? rms using correlated multiple-sampling-based readout circuitry.

    关键词： low read noise,high conversion gain,photoelectron counting histogram (PCH),CMOS image sensors (CISs),photon counting

    更新于2025-09-16 10:30:52

  • [IEEE 2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) - Tel-Aviv, Israel (2019.11.4-2019.11.6)] 2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) - Transformer-Coupled Octa-Core 60 GHz Push-Push VCO in a 45-nm RF-SOI CMOS Technology

    摘要： This work presents a 60 GHz octa-core push-push VCO in a 45 nm partially depleted (PD) Silicon-on-Insulator (SOI) CMOS technology. We investigate the feasibility of coupling eight VCO cores via resonant-tank transformers and discuss circuit topology considerations. The measured phase noise at 63.4 GHz is (cid:2)95.3 dB/Hz at 1 MHz offset from carrier. The continuous frequency-tuning range is 19 %. The eight VCO cores consume in total 80 mW DC power. The complete circuit, including buffers at the fundamental and second harmonic outputs, draws 158 mA from a single 1 V supply. The total area of the octa-core VCO excluding pads is 0.18 mm2.

    关键词： silicon-on-insulator,wideband,millimeter-wave,VCO,CMOS technology,phase noise

    更新于2025-09-16 10:30:52

  • A multi-beam X-ray imaging detector using a branched optical fiber bundle

    摘要： We developed a multi-beam X-ray imaging detector, consisting of four scintillator screens connected by a branched optical fiber bundle with a CMOS camera. By using the detector and a multi-beam imaging optics with silicon single crystalline blades designed for a white synchrotron radiation source, we successfully demonstrated multi-beam X-ray imaging with an exposure time of 1 ms. The long and flexible optical fiber bundle used for the detector enables us to realize high-speed multi-beam X-ray imaging with high flexibility at a relatively low cost.

    关键词： synchrotron radiation,scintillator screens,optical fiber bundle,multi-beam X-ray imaging,CMOS camera

    更新于2025-09-16 10:30:52

  • CMOS-Compatible Titanium Nitride for On-Chip Plasmonic Schottky Photodetectors

    摘要： Here, we propose a waveguide-integrated plasmonic Schottky photodetector (PD) operating based on an internal photoemission process with a titanium nitride plasmonic material. The theoretically examined structure employs an asymmetric metal?semiconductor?metal waveguide configuration with one of the electrodes being gold and the second being either gold, titanium, or titanium nitride. For the first time, we measured a Schottky barrier height of 0.67 eV for titanium nitride on p-doped silicon, which is very close to the optimal value of 0.697 eV. This barrier height will enable photodetection with a high signal-to-noise ratio when operating at a wavelength of 1550 nm. In addition to the measured optical properties of high absorption losses and reasonably large real part of the permittivity that are desired for this type of PD, titanium nitride is also compatible with easy integration on existing complementary metal?oxide?semiconductor technology. The use of titanium nitride results in a shorter penetration depth of the optical mode into the metal when compared to Ti, which in turn enhances the probability for transmission of hot electrons to the adjacent semiconductor, giving rise to an enhancement in responsivity.

    关键词： titanium nitride,internal photoemission,CMOS-compatible,waveguide-integrated plasmonic Schottky photodetector,signal-to-noise ratio

    更新于2025-09-16 10:30:52

  • <i>In situ</i> wavelength tuning of quantum-dot single-photon sources integrated on a CMOS-processed silicon waveguide

    摘要： Silicon quantum photonics provides a promising pathway to realize large-scale quantum photonic integrated circuits (QPICs) by exploiting the power of complementary-metal-oxide-semiconductor (CMOS) technology. Toward scalable operation of such silicon-based QPICs, a straightforward approach is to integrate deterministic single-photon sources (SPSs). To this end, hybrid integration of deterministic solid-state SPSs, such as those based on InAs/GaAs quantum dots (QDs), is highly promising. However, the spectral and spatial randomness inherent in the QDs poses a serious challenge for scalable implementation of multiple identical SPSs on a silicon CMOS chip. To overcome this challenge, we have been investigating a hybrid integration technique called transfer printing, which is based on a pick-and-place operation and allows for the integration of the desired QD SPSs on any locations on the silicon CMOS chips at will. Nevertheless, even in this scenario, in situ fine tuning for perfect wavelength matching among the integrated QD SPSs will be required for interfering photons from dissimilar sources. Here, we demonstrate in situ wavelength tuning of QD SPSs integrated on a CMOS silicon chip. To thermally tune the emission wavelengths of the integrated QDs, we augmented the QD SPSs with optically driven heating pads. The integration of all the necessary elements was performed using transfer printing, which largely simplified the fabrication of the three-dimensional stack of micro/nanophotonic structures. We further demonstrate in situ wavelength matching between two dissimilar QD sources integrated on the same silicon chip. Our transfer-printing-based approach will open the possibility for realizing large-scale QPICs that leverage CMOS technology.

    关键词： wavelength tuning,transfer printing,quantum photonics,single-photon sources,silicon CMOS,quantum dots

    更新于2025-09-16 10:30:52

  • [IEEE ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) - Cracow, Poland (2019.9.23-2019.9.26)] ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) - Design and Characterization of Monolithic Microring Resonator based Photodetector in 45nm SOI CMOS

    摘要： This paper presents a characterization and a compact model of microring resonator based photodetector designed in a monolithic silicon-photonic platform. As these detectors are inherently wavelength selective they can potentially enable fully integrated DWDM optical receivers. The detector makes use of resonance enhancement in a microring by integrating 30 interleaved lateral P-N junctions along a 5μm radius microring cavity. The performance measurements reveal a peak responsivity of 0.6 A/W at 1270nm with <1nA dark current and <20fF junction capacitance at -7.5V reverse bias.

    关键词： DWDM,silicon-photonics,monolithic,microring resonator,SiGe,integrated heater,CMOS,photodetector,SOI

    更新于2025-09-12 10:27:22

  • Design of a 90 GHz SOI Fin Electro-Optic Modulator for High-Speed Applications

    摘要： Introducing high speed networks, such as the fifth generation of mobile technology and related applications including the internet of things, creates a pressing demand for hardware infrastructure that provides sufficient bandwidth. Here, silicon-based microwave-photonics presents a solution that features easy and inexpensive fabrication through a mature platform that has long served the electronics industry. In this work, the design of an electro-optic modulator is proposed where the ‘fin’ structure is adopted from the domain of electronics devices, with emphasis on the high speed of operation. The proposed modulator is customized to provide a bandwidth of 90 GHz with a small phase shifter length of 800 μm and an optical insertion loss of 4 dB. With such a speed, this proposed modulator fits high-speed applications such as modern tele-communications systems.

    关键词： CMOS,silicon photonics,integrated optics,modulators

    更新于2025-09-12 10:27:22

  • [IEEE 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems (MEMS) - Seoul, Korea (South) (2019.1.27-2019.1.31)] 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems (MEMS) - A Closed-Loop Controlled Cmos Mems Biaxial Scanning Mirror for Projection Display

    摘要： This work presents a bi-axial electromagnetically-driven piezoresistively sensed scanning mirror with a θopt?D?fr,fast product over 2400 deg?mm?kHz, showing the capability to achieve HD720 (720 × 1280) display resolution. Both driving and sensing capabilities are conveniently realized by CMOS MEMS technologies. The transduction mechanism provides a more linear response than capacitively transduced scanning mirrors. Based on the open-loop characterization of the driving and sensing performance, closed-loop control of slow-axis motion is designed and demonstrated.

    关键词： piezoresistive sensing,closed-loop control,scanning mirror,CMOS MEMS,electromagnetic actuation,projection display

    更新于2025-09-12 10:27:22

  • Plasmonics-Integrated Ge PIN-Photodetectors

    摘要： Refractive index sensors can be designed for high sensitivities at small device foot-print. Using a complementary metal-oxide-semiconductor compatible process for fabrication paves the way to cheap devices enabling integrated biosensors. We present results on combining vertical Ge PIN photodetectors with metallic nanostructures such as Al nanohole arrays placed directly on top of the diode. The interaction of plasmonic resonances and photonic modes such as waveguide modes or optical modes in nanostructured photodetectors can potentially be exploited to design refractive index sensors with very high sensitivities. We discuss how the interplay of material properties and device geometry can be tailored for applications in integrated biosensing.

    关键词： CMOS,Plasmonics,Ge PIN-photodetectors,refractive index sensors,biosensors

    更新于2025-09-12 10:27:22

  • [IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Germanium Photodetectors with 60-nm Absorption Coverage Extension and ～2× Quantum Efficiency Enhancement across L-Band

    摘要： Germanium-on-insulator (GOI) metal-semiconductor-metal (MSM) photodetectors were demonstrated with a 60 nm extension on the absorption coverage and a ~2× enhancement on the quantum efficiency across the L-band.

    关键词： silicon nitride stressor,CMOS-compatible,longer wavelength detection,photodetectors,germanium

    更新于2025-09-12 10:27:22