- 标题
- 摘要
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- 实验方案
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Cooperative Operation of R-SFCL and Online Current Limitation Strategy of GCPVS under Asymmetrical Faults
摘要： Grid-connected photovoltaic (GCPVS) should remain grid-connected and inject specified reactive current in accordance with fault-ride-through (FRT) requirements. To minimize voltage ripples on the DC link voltage and restrict the maximum phase currents, a modified online current limitation strategy (OCLS) is presented in this paper. Transient performance of GCPVS is enhanced as resistive-type superconducting fault current limiter (R-SFCL) is applied under severe asymmetrical faults. By introducing proper resistance selection process, the cooperative operation of OCLS and SFCL is proved to be effective.
关键词： reactive power control,transient performance,superconducting fault current limiters (FCL),online current limitation strategy (OCLS),photovoltaic systems,Fault ride-through (FRT) capability,symmetrical and asymmetrical faults
更新于2025-09-23 15:22:29
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[IEEE 2018 2nd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) - Kolkata (2018.5.4-2018.5.5)] 2018 2nd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) - Effect of Self-Consistency Technique on Current Density Profile of Resonant Tunneling Diode
摘要： This paper reveals the importance of self-consistency technique for computing current density in resonant tunneling device. AlxGa1-xAs/GaAs/AlyGa1-yAs is considered for simulation purpose, and both Schr?dinger and Poisson's equations are simultaneously solved subject to appropriate boundary conditions to obtain current density as a function of externally applied bias. Structural parameters and material compositions within type-I range are varied to get the fluctuations in current, which is otherwise absent when calculation is performed without applying self-consistency technique. Findings are significant as magnitude of current obtained is higher than that obtained when self-consistency is absent. Result has immense importance for low bias application of RTD due to the presence of peaks at particular system compositions.
关键词： Peak current density,Resonant tunneling diode,Poisson's equation,Current density,Self-consistency technique,Schrodinger's equation
更新于2025-09-23 15:22:29
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[IEEE 2018 International Conference on Electromagnetics in Advanced Applications (ICEAA) - Cartagena des Indias (2018.9.10-2018.9.14)] 2018 International Conference on Electromagnetics in Advanced Applications (ICEAA) - Exact Solution for the Electromagnetic Field Excited by a Pulsed Filamentary Electric Current in a Nonlinear Nondispersive Medium
摘要： Radiation from a pulsed ?lamentary electric current immersed in a nonlinear nondispersive medium is studied. Two cases where such a medium is homogeneous or has a power-law permittivity pro?le in the linear limit are considered and the spatial distributions of the source-excited ?elds in the nonlinear regime are analyzed in these cases. Concerning the propagation of pulsed signals excited by the source, the emphasis is placed on the formation of cylindrical electromagnetic shock waves and the behavior of the propagation velocities of wave pro?les in the nonlinear medium. Special attention is also paid to the in?uence of the pulse shape on the manifestation of the studied nonlinear phenomena.
关键词： pulsed electric current,nonlinear nondispersive medium,electromagnetic shock waves
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Reduced Current Collapse in AIGaN/GaN HEMTs with p-GaN Layer in Gate-Drain Access Region
摘要： For the purpose of reducing current collapse, we have studied a special structure of an AlGaN/GaN HEMT, in which an isolated p-GaN layer is located in the gate-drain access region. An addition of an isolated p-GaN layer resulted in significant suppression in current collapse by 98 %, as compared to the conventional HEMT. It was also found that current collapse was more effectively suppressed when the p-GaN region was located closer to the gate.
关键词： current collapse,HEMT,AlGaN/GaN,p-GaN layer
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Improved Current Collapse in AlGaN/GaN MOS-HEMTs with Dual Field-Plates
摘要： We fabricated AlGaN/GaN MOS-HEMTs with a dual-field-plate (FP), composed of gate-FP and source-FP. Using pulsed I-V technique, the effect of FP on current collapse was studied. Applying a high positive gate voltage resulted in current collapse suppression. It was found that the use of dual-FP was effective to significantly suppress the current collapse.
关键词： current collapse,MOS,AlGaN/GaN,field-plate
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC) - Shenzhen, China (2018.11.4-2018.11.7)] 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC) - Design and Research of High Voltage Power Conversion System for Space Solar Power Station
摘要： To meet the needs of its characteristics, this paper studies the space high voltage power conversion system’s circuit topology and the optimization design of its structure. In the first part, the Common space solar power station power management and distribution method is analyzed. And based on that, a new hybrid power system structure is presented, in which a power transmission bus-bar structure suited for space solar arrays is constructed and the modular multi-converter with serial-parallel combination control strategy is proposed. By applying this new structure, the high transformation ratio in the solar cell arrays and sub-arrays, the low power loss, the large power conversion with high power density and the high efficiency can all be achieved. In the second part, a new soft-switched isolated full-bridge converter is also proposed. And research is made based on the new converter, which includes the study on the transformer modular magnetic integration, the space temperature field and the thermal design. Finally, the simulation and experiment prove the correctness of the theoretical analysis.
关键词： high voltage transformation,IPOS combination,current sharing control,space solar power station
更新于2025-09-23 15:22:29
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Fabrication of large scale PS monolayer colloidal crystal film by using a novel secondary self-assembly method for nanoimprint technique
摘要： In the dynamic wireless power transfering(WPT) process of electric vehicle, the charging current of the battery is affected by some factors, such as the primary coil current and the relative position of the primary and secondary coils. Moreover, due to the travel of the electric vehicle, it is difficult to establish effective feedback between the primary side and secondary side. In this case, the charging method based on the primary side and secondary side independent control is analyzed. In this paper, it shows that the PID controller is set up after modeling the transmitter and the receiver. The effectiveness of this strategy is also verified by simulation on MATLAB.
关键词： WPT,electric vehicles,constant current control,PID
更新于2025-09-23 15:22:29
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Gas Breakdown and Discharge Formation in High-Power Impulse Magnetron Sputtering
摘要： Discharge behaviors of high-power impulse magnetron sputtering with different targets have been investigated. Distinct current–voltage curves and target current waveforms are observed. Breakdown voltage and the maximum target current show a periodic drop with the increase of atomic number in subgroups and periods. The target current density is found to be mainly affected by the secondary electron emission yield. Thus, its magnitude is unable to directly evaluate the ionization degree of sputtered atoms in high-power impulse magnetron sputtering (HiPIMS) process. In this paper, the interactive influence of secondary electron emission, sputter yield, and ionization energy on the ionization degree of sputtered atoms is discussed based on the analysis of the voltage and current characteristics. As a result, targets can be categorized into three sorts according to the ionization degree: 1) low ionization degree targets, such as Ag and C less than 10%; 2) intermediate ionization degree targets like Cr and Cu with 55% and 35%; 3) Ti, Zr, and Mo targets with the second ionization processes. These results provide institutive operation ranges for the state-of-the-art HiPIMS applications.
关键词： optical emission spectroscopy (OES),ionization degree,Current waveform,gas breakdown,high-power impulse magnetron sputtering (HiPIMS)
更新于2025-09-23 15:22:29
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Reverse annealing studies of irradiated silicon by use of current–voltage measurements
摘要： The annealing behaviour of irradiated silicon p-i-n diodes has been investigated by use of I–V measurements. The radiation-induced damage is achieved by the use of 1 MeV neutrons. The results have been analysed and a striking feature is easily noticeable where defects that do not anneal out alter their activity and behave more as generation centres. This means that they are situated in the upper half of the band gap where they act to increase the carrier density and the measured current. The increase in current starts to occur at around 100 days and a change in trap activity at around 180 days after irradiation. The device behaviour, however, remains ohmic throughout indicating that a defect level that is responsible for relaxation behaviour is stable. This study would assist in demonstrating stability of silicon radiation detectors during their operational time.
关键词： Diode,Current,Radiation,Semiconductor,Silicon,Annealing
更新于2025-09-23 15:22:29
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New Current-Mode Multipliers by CNTFET-Based n-Valued Binary Converters
摘要： This paper presents new Binary Converters (or current-mode compressors) by the usage of carbon nanotube field effect transistors. The new designs are made of three parts: 1) the input currents which are converted to voltage; 2) threshold detectors; and 3) the output current flow paths. In addition, an 8×8-bit multiplier is considered as a bench mark to estimate their efficiency degrees. The first approach is based on high-order Binary Converters, and the second one is only composed of 4BCs and Half Adders.
关键词： high-order compressor,current-mode logic,multiplier,CNTFET,Binary Converter
更新于2025-09-23 15:22:29