研究目的
Reducing current collapse in AlGaN/GaN HEMTs by studying a special structure with an isolated p-GaN layer in the gate-drain access region.
研究成果
The addition of an isolated p-GaN layer in the gate-drain access region significantly suppresses current collapse by up to 98% compared to conventional HEMTs, with better suppression when the p-GaN is closer to the gate, due to hole injection neutralizing trapped electrons.
研究不足
The study is limited to specific device geometries and materials; scalability and integration with other technologies may require further investigation. The effect of p-GaN layer positioning is explored but not optimized for all conditions.
1：Experimental Design and Method Selection:
Fabricated AlGaN/GaN HEMTs with an isolated p-GaN layer in the gate-drain access region to suppress current collapse. Used MOCVD for growth and standard semiconductor processing techniques.
2：Sample Selection and Data Sources:
p-GaN/AlGaN/GaN heterostructures grown on sapphire substrates. Specific parameters: Mg concentration of p-GaN at 3 × 10^19 cm^-3, Al composition of AlGaN at 25%, gate length 3 μm, source-to-gate spacing 3 μm, gate-to-drain spacing 15 μm, PD width 100 μm, gate width 100 μm.
3：List of Experimental Equipment and Materials:
MOCVD system for growth, sapphire substrates, Ti/Al/Mo/Au for ohmic contacts, Ni/Au for ohmic contact, annealing furnace.
4：Experimental Procedures and Operational Workflow:
Deposited ohmic contacts (Ti/Al/Mo/Au for source/drain, Ni/Au for gate), annealed at 850 °C for 30 s. Measured DC and pulsed I-V characteristics to evaluate current collapse and dynamic on-resistance.
5：Data Analysis Methods:
Analyzed DC I-V curves, pulsed I-V characteristics, and calculated normalized dynamic Ron (NDR) as dynamic Ron divided by static Ron.
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