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Degradation prediction of a γ-ray radiation dosimeter using InGaP solar cells in a primary containment vessel of the Fukushima Daiichi Nuclear Power Station
摘要： Indium gallium phosphide (InGaP) solar cell with a superior high-radiation resistance is expected to be a powerful candidate for a dosimeter under a high-radiation dose rate environment. In this study, in order to predict the lifetime as the dosimeter using the InGaP solar cell, we clarify the effect of minority-carrier diffusion length (L) on a radiation-induced current as a dose signal in the InGaP solar cell by irradiation tests and empirical calculations. In the irradiation tests, the short-circuit current density (Jsc) as a function of the γ-ray dose rate is measured to estimate the L for the InGaP solar cell by irradiation tests. The operational lifetime as a detector using the InGaP solar cell under various dose rates is estimated by using the empirical calculations based on the relation between the L and absorbed dose. The results suggest that the dosimeter using InGaP solar cell is able to be used during more than 10 h in the primary containment vessel of the Fukushima Daiichi Nuclear Power Plant and it has a high potential of being a radiation-resistant dosimeter that would contribute to the decommissioning.
关键词： solar cell,operation lifetime,decommissioning,radiation-induced current,minority-carrier diffusion length,Dosimetry,InGaP compound semiconductor,degradation prediction
更新于2025-09-16 10:30:52
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Enhancing electron diffusion length in narrow-bandgap perovskites for efficient monolithic perovskite tandem solar cells
摘要： Developing multijunction perovskite solar cells (PSCs) is an attractive route to boost PSC efficiencies to above the single-junction Shockley-Queisser limit. However, commonly used tin-based narrow-bandgap perovskites have shorter carrier diffusion lengths and lower absorption coefficient than lead-based perovskites, limiting the efficiency of perovskite-perovskite tandem solar cells. In this work, we discover that the charge collection efficiency in tin-based PSCs is limited by a short diffusion length of electrons. Adding 0.03 molar percent of cadmium ions into tin-perovskite precursors reduce the background free hole concentration and electron trap density, yielding a long electron diffusion length of 2.72 ± 0.15 μm. It increases the optimized thickness of narrow-bandgap perovskite films to 1000 nm, yielding exceptional stabilized efficiencies of 20.2 and 22.7% for single junction narrow-bandgap PSCs and monolithic perovskite-perovskite tandem cells, respectively. This work provides a promising method to enhance the optoelectronic properties of narrow-bandgap perovskites and unleash the potential of perovskite-perovskite tandem solar cells.
关键词： narrow-bandgap perovskites,perovskite solar cells,tandem solar cells,electron diffusion length,cadmium ions
更新于2025-09-16 10:30:52
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Theoretical Study of Proton Radiation Influence on the Performance of a Polycrystalline Silicon Solar Cell
摘要： The aim of this work is to study the behaviour of a silicon solar cell under the irradiation of di?erent ?uences of high-energy proton radiation (10 MeV) and under constant multispectral illumination. Many theoretical et experimental studies of the e?ect of irradiation (proton, gamma, electron, etc.) on solar cells have been carried out. These studies point out the e?ect of irradiation on the behaviour of the solar cell electrical parameters but do not explain the causes of these e?ects. In our study, we explain fundamentally the causes of the e?ects of the irradiation on the solar cells. Taking into account the empirical formula of di?usion length under the e?ect of high-energy particle irradiation, we established new expressions of continuity equation, photocurrent density, photovoltage, and dynamic junction velocity. Based on these equations, we studied the behaviour of some electronic and electrical parameters under proton radiation. Theoretical results showed that the defects created by the irradiation change the carrier distribution and the carrier dynamic in the bulk of the base and then in?uence the solar cell electrical parameters (short-circuit current, open-circuit voltage, conversion e?ciency). It appears also in this study that, at low ?uence, junction dynamic velocity decreases due to the presence of tunnel defects. Obtained results could lead to improve the quality of the junction of a silicon solar cell.
关键词： silicon solar cell,proton radiation,diffusion length,electrical parameters,carrier distribution,junction dynamic velocity
更新于2025-09-16 10:30:52
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Evaluation of exciton diffusion length in highly oriented fullerene films of fullerene/p-Si(100) hybrid solar cells
摘要： Highly oriented fullerene (C60) films on p-Si (100) substrates were fabricated to evaluate the crystallinity dependent exciton diffusion length of C60 (LC60). The crystal structure of the C60 films was examined using grazing incidence X-ray diffraction (GIXD). The results of an in-plane rocking scan and a pole figure suggested that a 12-fold-symmetry crystal was grown with the C60(111) surface interfaced to the Si(100) substrate. The photovoltaic characteristics of the oriented C60/p-Si(100) hybrid solar cells were evaluated. A masking effect was clearly evident in the incident photon-to-current conversion efficiency (IPCE) spectra. LC60 was evaluated using both experimental IPCE spectra and that produced by one-dimensional-optical simulation. It was concluded that LC60 for highly oriented C60 was 60 nm, which was longer than that of disordered C60 films.
关键词： crystal growth,hybrid solar cells,fullerene (C60),exciton diffusion length,grazing incidence X-ray diffraction (GIXD),masking effect
更新于2025-09-11 14:15:04
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[IEEE 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Ottawa, ON, Canada (2019.7.8-2019.7.12)] 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Model Calibration of InGaAs/InP p-I-n Test Structures
摘要： Numerical calibration of InGaAs/InP double-heterostructure p-I-n junctions is performed at room temperature using guarded test structures of various areas and investigating the contributions from minority carrier diffusion, depletion region generation and finally perimeter (shunt) leakage. The perimeter leakage is determined to be 0.5 pA/cm, whereas the depletion region contributes 2.2 nA/cm2; the bulk diffusion contribution is excluded via the guard ring but can be computed analytically to be 2.0 nA/cm2. Reproducing the experimental test structures within the numerical modeling environment accurately reproduces the data based on calibrating the diffusion length and SRH lifetime.
关键词： dark current,III-V semiconductors,diffusion length,perimeter leakage,recombination
更新于2025-09-11 14:15:04
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Ultrafast THz photophysics of solvent engineered triple-cation halide perovskites
摘要： Solution processed thin film organic-inorganic perovskites are key to the large scale manufacturing of next generation wafer scale solar cell devices. The high efficiency of the hybrid perovskite solar cells is derived mainly from the large carrier mobility and the charge dynamics of films, which heavily depend on the type of solvent used for the material preparation. Here, we investigate the nature of conduction and charge carrier dynamics of mixed organic-inorganic cations [methylammonium (MA), formamidinium (FA), and cesium (Cs)] along with the mixed halides [iodine (I) and bromine (Br)] perovskite material [Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3] synthesized in different solvents using optical pump terahertz probe (OPTP) spectroscopy. Our findings reveal that carrier mobilities and diffusion lengths strongly depend on the type of solvent used for the preparation of the mixed cation perovskite film. The mixed cation perovskite film prepared using dimethylformamide/dimethylsulfoxide solvent shows greater mobility and diffusion length compared to γ-butyrolactone solvent. Our findings provide valuable insights to improve the charge carrier transport in mixed cation perovskites through solvent engineering.
关键词： charge carrier dynamics,OPTP spectroscopy,diffusion length,perovskites,carrier mobility,solvent engineering
更新于2025-09-09 09:28:46
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Numerical simulation and validity of the surface photovoltage method in amorphous silicon with a Schottky contact
摘要： The steady-state surface photovoltage technique (SPV) is widely used to evaluate minority photocarriers diffusion length (Lp) of hydrogenated amorphous silicon (a-Si:H) even though the space charge region is reduced. In this work, we propose a formula to predict more accurately minority diffusion length Lp depending on apparent diffusion length (Lapp) and space charge width (W). This formula is deduced by Moore’s analytical solution in relation to assumptions involving W are explored for a set of parameters of the a-Si:H density of states. This numerical simulation shows a linear dependence of Lapp up on the valence band tail energy, which agrees well with the experimental results. The Lp values obtained by the new formula are compared to Lapp and discussed for a typical DOS parameters of a-Si:H.
关键词： surface photovoltage,Minority diffusion length,optical absorption
更新于2025-09-09 09:28:46
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Tellurium-based Double Perovskites A2TeX6 with Tunable Bandgap and Long Carrier Diffusion Length for Optoelectronic Applications
摘要： Lead-free hybrid perovskites have attracted immense interest as environmentally friendly light absorbers. Here, we report on tellurium (Te)-based double perovskites A2TeX6 (A= MA, FA or BA, X = Br- or I-, MA= CH3NH3, FA= CH(NH2)2, BA= benzylamine) as potentially active materials for optoelectronic devices. This perovskites exhibit a tunable bandgap (1.42 eV-2.02 eV), a low trap density (～1010 cm-3), and a high mobility (～ 65 cm2 V-1 s-1). Encouragingly, the MA2TeBr6 single crystal with a bandgap of 2.00 eV possesses a long carrier lifetime of ~6 μs and corresponding carrier diffusion lengths of ~38 μm, which are ideal characteristics for a material for photodetectors and tandem solar cells. Moreover, A2TeX6 perovskites are relatively robust in ambient conditions, being stable for at least two months without showing any signs of phase change. Our findings bring to the forefront a family of lead-free Te-based perovskites for non-toxic perovskite optoelectronics.
关键词： Optoelectronic applications,Long carrier diffusion length,Tunable bandgap,Tellurium-based double perovskites
更新于2025-09-04 15:30:14