- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Device Structure and Passivation Options for the Integration of Scaled IGZO TFTs
摘要： The focus of this work is on the performance dependence of scaled the device structure and IGZO TFTs with variations semiconductor passivation scheme. TCAD simulation was used to provide insight on the details which establish the limits on electrostatic control. Dielectrics used for the gate and back-channel regions have been adjusted to overcome short-channel effects, along with required modifications in process recipes for PECVD passivation layers, oxygen ambient annealing, and ALD capping material. Scaled devices with channel lengths as small as L = 1 μm have been investigated and evaluated by the electrostatic behavior, and stability when subjected to thermal and bias stress. An optimized process and associated procedural details for scaled devices is presented, along with suggested options for further channel length reduction to submicron dimensions.
关键词： IGZO TFTs,scaling,TCAD simulation,electrostatic control,PECVD,short-channel effects,ALD,thermal stability,bias stress,passivation
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2019.11.14-2019.11.15)] 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - High reliability InGaZnO TFT by inductively coupled plasma sputtering system
摘要： The reliability of oxide semiconductor TFT and the method to lower the process temperature have become serious problems. In order to solve these problems, we have developed inductively coupled plasma sputtering equipment that can control the Radio Frequency (RF) power to generate Inductively Coupled Plasma (ICP) and the voltage applied to the sputtering target independently. Using this equipment, we can deposit high-density oxide semiconductor films at room temperature and fabricate highly reliable TFTs with them.
关键词： thin-film transistor(TFT),inductively coupled plasma (ICP) sputtering,InGaZnO (IGZO),reliability
更新于2025-09-16 10:30:52
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30.2: <i>Invited Paper:</i> A RGB chip Full Color Active Matrix Micro‐LEDs Transparent Display with IGZO TFT Backplane
摘要： In this paper, the first time reported the full color active matrix micro-LEDs (AMLEDs) display with high transparent over 40% which is based on top gate IGZO TFT (Thin film transistor) backplane. This AMLEDs display was successfully developed with flip chip RGB micro-LEDs that can achieve more than 108% NTSC gamut, while the display is also brighter than 400nits.
关键词： micro-LEDs,Active Matrix,High Transparent,Full Color,IGZO TFT backplane
更新于2025-09-11 14:15:04
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P‐1.15: A new optical compensation scheme for AMOLED displays with a‐IGZO TFT and a‐Si:H PIN diode
摘要： This paper proposed a new optical compensation scheme for AMOLED display based on a sensor unit in pixel. The sensor unit includes an a-IGZO TFT, which is adopted as a switch due to its low off current, a-Si:H PIN diode as optical sensor due to its high photoconductive gain, and a capacitor to store charges. Owing to the large off current difference under different brightness, the luminance of every pixel can be acquired by PIN sensor, and then data voltage is adjusted accordingly. The scheme is adopted in a 5 inch AMOLED display, and the results show this method can capture the pixel brightness accurately, and effectively compensate low gray level light uniformity.
关键词： IGZO TFT,Optical compensation,a-Si:H PIN diode
更新于2025-09-11 14:15:04
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Enhanced Flexible Piezoelectric Sensor by the Integration of P(VDF-TrFE)/AgNWs Film With a-IGZO TFT
摘要： Flexible pressure sensors are important components in future rollable touch screens, health care devices, electronic skins, and more. However, large-area array pressure sensors with small-size, good sensitivity and the ability of detecting high frequency dynamic force remain the key challenges for their practical applications. In this work, we proposed a novel flexible piezoelectric pressure sensor system combined with a P(VDF-TrFE)/AgNWs thin film and an a-IGZO TFT. The doping of AgNWs into the P(VDF-TrFE) can improve the piezoelectric performance of P(VDF-TrFE) without high voltage polarization and pressure stretching process, which are harmful to the performance of TFT. With the combination of the a-IGZO TFT, this pressure sensor can be arrayed 4×4 in an active-matrix design with a dynamic force detecting ability (a response of 1100mV/N), exhibiting good flexibility, fast response speed, high amplification, and lower energy consumption.
关键词： P(VDF-TrFE)/AgNWs,a-IGZO TFT,flexible pressure sensor,array production
更新于2025-09-10 09:29:36
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Hydrothermal synthesis and characterization of In2O3-ZnGa2O4 nanocomposites and their application in IGZO ceramics
摘要： Poly-crystalline In2O3-ZnGa2O4 nanocomposites were successfully synthesized by hydrothermal method with a mixed solution of In, Ga and Zn nitrates with equal mole ratio (In: Ga: Zn=1: 1: 1) and the ammonia was used as the precipitant. The effects of hydrothermal temperature and pH value of the mixed solution on the properties of the nanocomposites were investigated. The microstructure of the prepared In2O3-ZnGa2O4 nanocomposites was characterized by SEM and TEM, respectively. The growth mechanisms of In2O3-ZnGa2O4 nanocomposites were also preliminarily discussed in this study. Results reveal that the IGZO ceramics prepared by In2O3-ZnGa2O4 nanocomposites own a high relative density of 99.5% and low resistivity of 1.2 mΩ·cm, which can be applied to the preparation of IGZO thin film with superior performance.
关键词： Nanocomposites,IGZO,Crystal structure,Ceramics
更新于2025-09-10 09:29:36
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[IEEE 48th European Solid-State Device Research Conference (ESSDERC 2018) - Dresden (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - Monolithically integrated 1 TFT-1RRAM non-volatile memory cells fabricated on PI flexible substrate
摘要： This paper presents an integrated, 1-transistor 1-RRAM cell based on amorphous InGaZnO flexible thin-film transistor technology. Both elements of the memory cell have been integrated side-by-side in a monolithic fashion on a flexible polyimide substrate. The thin-film transistor technology shows good uniformity figures, with a minimal channel length of 5 μm. The non-volatile memory technology is based on TaOx as material for Resistive Random Access Memory. The integrated scalable memory device measures 5x5 μm2 and results in a memory window of 7.76.
关键词： IGZO,metal-oxide,flexible,RRAM,memory
更新于2025-09-10 09:29:36
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30.3: The world's first prototype of 85-inch 8K4K 120Hz LCD with BCE-IGZO structure and GOA design
摘要： We have developed a 85-in. 120Hz-Driven 8K4K VA-LCD which succesfully applied BCE IGZO in GOA to gain super resolution, ultra - high refresh rate for the first time in the world .
关键词： BCE IGZO,GOA,120Hz,8K4K,85 inch,LCD
更新于2025-09-10 09:29:36
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Design and analysis of electrostatic-charge plasma based dopingless IGZO vertical nanowire FET for ammonia gas sensing
摘要： In this paper, Dopingless Gate All Around (GAA) Vertical Nanowire Field Effect Transistor (VNWFET) is designed with artificial material Indium Gallium Zinc Oxide (IGZO) as a channel material. IGZO channel has high electron mobility compared to more traditional amorphous semiconductors. In VNWFETs, since the channel length (Lch) is characterized vertically, it can be relaxed without area penalty on-chip, which in turn also allows some relaxation in the nanowire diameter while keeping optimum short-channel-effects control. Electrostatic-Charge Plasma technique is used to form a source-drain region on an intrinsic body of IGZO material. At the source side, the N+ region is formed by selecting the appropriate work function of the metal electrode, and at the drain side, the N+ region is formed by giving biasing to the metal electrode. N+ channel dopingless VNWFET with the catalytic metal gate is proposed for ammonia gas sensing. Cobalt, Molybdenum, and Ruthenium are used as a gate electrode in ammonia gas detection due to their high reactivity towards ammonia. Also, we have compared their ON and OFF sensitivity of the proposed device toward the gas adsorption. Due to the presence of gas on the gate, the metal work function of gate metal changes which varies the OFF-current (IOFF), ON-current (ION) and Threshold voltage (Vth) as these are considered as sensitivity parameters for sensing the ammonia gas molecules. The dimensional parameters (radius, and length) and dielectric materials are varied to check the change in device sensitivities. Results show that as the work function varies increases 50, 100, 150, 200meV and 250meV for catalytic metal at the gate, the sensitivity is increased.
关键词： Vertical nanowire FET (VNWFET),Indium Gallium Zinc Oxide (IGZO),Electrostatic-Charge Plasma (E-CP),Ammonia Gas sensor
更新于2025-09-10 09:29:36
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Enhanced Detectivity and Suppressed Dark Current of Perovskite-InGaZnO Phototransistor via PCBM Interlayer
摘要： Hybrid phototransistors based on InGaZnO (IGZO) metal oxide thin film transistor (TFT) and photoabsorbing capping layer such as perovskite (MAPbI3) is a promising low-cost device for developing advanced X-ray and UV flat panel imager. However, it is found that the introduction of MAPbI3 inevitably damages the IGZO channel layer during fabrication, leading to deteriorated TFT characteristics such as off current rising and threshold voltage shift. Here, we report an effective approach for improving the performance of the perovskite-IGZO phototransistor by inserting a PCBM or PCBM:PMMA interlayer between the patterned MAPbI3 and the IGZO. The interlayer effectively prevents the IGZO from damaging by the perovskite fabrication process, while allowing efficient charge transfer for photo sensing. In this configuration, we have achieved a high detectivity (1.35 × 1012 Jones) perovskite-IGZO phototransistor with suppressed off-state drain current (~10 pA) in the dark. This work points out the importance of interface engineering for realizing higher performance and reliable heterogeneous phototransistors.
关键词： IGZO,interlayer,phototransistor,perovskite,photodetector
更新于2025-09-10 09:29:36