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Nanometer-Sized Crystalline Clusters of IGZO Films Determined from the Grazing Incidence X-ray Scattering and Anomalous X-ray Scattering Data Combined with Reverse Monte Carlo Simulations
摘要： Grazing incidence X-ray scattering measurements have been carried out on c-axis aligned crystalline-indium gallium zinc oxide (CAAC-IGZO) ?lm and nanocrystalline category-indium gallium zinc oxide (NC-IGZO) ?lm and the following results were obtained: (1) the characteristic layered structure of the IGZO crystal did not hold its shape and the X-ray scattering pro?le showed only a relatively sharp ?rst peak at the wave vector (Q) = 21.8 for CAAC ?lm and 23.1 nm11 for NC ?lm, respectively, and additional weak broad peaks were observed at a higher angle. (2) In the case of the CAAC ?lm, tiny peaks were observed at Q = 7 and 14 nm11, corresponding to the positions of the 003 and 006 re?ections, respectively, of the IGZO crystal. Such tiny peaks were not detected in the case of NC ?lm but the asymmetry of the ?rst peak at the low angle side was clearly observed. (3) These structural features implied that more than three polyhedral units, such as InOx (x = 4-6), GaOy (y = 4-6), and ZnOz (z = 4-6), were likely to coexist. It is appropriate to call this structural feature as cluster-1. (4) A composite-type structure formed by combining these polyhedral units is also likely to exist and leads to middle-range ordering. This structure is called cluster-2. The size of such cluster-2 has been estimated to be 2.2 nm for CAAC ?lm and 1.8 nm for NC ?lm using the measured pair distribution function. To gain insights into the structural features of IGZO ?lms, realistic atomic-scale models were obtained to ?t not only the ordinary interference function of grazing incidence X-ray scattering but also the environmental interference function of the anomalous X-ray scattering (AXS) with Zn-absorption edge using reverse Monte Carlo (RMC) simulation. (5) The resultant models indicated the complex and irregular atomic arrangements of two types of IGZO ?lms, which are well characterized by nanometer-sized crystalline clusters. This characteristic feature may be referred to as crystalline-cluster-composite (triple C) structure.
关键词： anomalous X-ray scattering,nanometer-sized crystalline clusters,IGZO ?lm,grazing incidence X-ray scattering,reverse Monte Carlo (RMC) simulation
更新于2025-09-09 09:28:46
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Indium-Gallium-Zinc-Oxide Schottky Synaptic Transistors for Silent Synapse Conversion Emulation
摘要： Silent synapses play an important role in synaptic plasticity and the nervous system development. In this letter, indium-gallium-zinc-oxide (IGZO) Schottky electric-double-layer transistors were proposed for silent synapse conversion emulation. Silent to active conversion of such neuromorphic devices was realized by applying voltage pulses on the gate electrode of the synaptic transistor. In addition, some important synaptic behaviors such as paired-pulse facilitation and dynamic high-pass filtering were also emulated in the IGZO-based Schottky synaptic transistor after electric pulse activation.
关键词： Electric-double-layer transistors,IGZO,Neuromorphic devices,Schottky contacts
更新于2025-09-09 09:28:46
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Modular time division multiplexer: Efficient simultaneous characterization of fast and slow transients in multiple samples
摘要： A modular time division multiplexer (MTDM) device is introduced to enable parallel measurement of multiple samples with both fast and slow decay transients spanning from millisecond to month-long time scales. This is achieved by dedicating a single high-speed measurement instrument for rapid data collection at the start of a transient, and by multiplexing a second low-speed measurement instrument for slow data collection of several samples in parallel for the later transients. The MTDM is a high-level design concept that can in principle measure an arbitrary number of samples, and the low cost implementation here allows up to 16 samples to be measured in parallel over several months, reducing the total ensemble measurement duration and equipment usage by as much as an order of magnitude without sacrificing fidelity. The MTDM was successfully demonstrated by simultaneously measuring the photoconductivity of three amorphous indium-gallium-zinc-oxide thin films with 20 ms data resolution for fast transients and an uninterrupted parallel run time of over 20 days. The MTDM has potential applications in many areas of research that manifest response times spanning many orders of magnitude, such as photovoltaics, rechargeable batteries, amorphous semiconductors such as silicon and amorphous indium-gallium-zinc-oxide.
关键词： fast and slow transients,a-IGZO,MTDM,modular time division multiplexer,amorphous indium-gallium-zinc-oxide,parallel measurement,photoconductivity
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) - Hangzhou, China (2018.8.13-2018.8.17)] 2018 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) - A Full-swing Inverter Based on IGZO TFTs for Flexible Circuits
摘要： is well oxide semiconductors (AOS) are of high mobility and reliable stability, especially indium-gallium-zinc oxide (IGZO). It is the most promising material applied in the manufacture of both displays and integrated circuits in the near future. Taking the advantages of electrical and flexible properties, in particular, IGZO TFT has drawn a great amount of attention. In our work, IGZO TFTs are fabricated on the hydroxylated polyethylene terephthalate (PET) substrate at the temperature of 180°C, which is apparently lower than that in the conventional process. The experimental performance of the IGZO TFTs show that the mobility and on-off ration are up to 8 cm2V-1s-1 and 105 respectively. In addition, an inverter based on IGZO TFTs has been achieved on the PET substrate, and its gain reaches the value of -20, showing its potential for flexible logic circuits based on oxide TFTs.
关键词： IGZO TFT,flexible,inverter
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness
摘要： We investigated the effect of active layer thickness on dynamic threshold voltage (VTH) operation for double-gate (DG) (a-IGZO) thin-film transistors (TFTs). It is found that with 80 nm a-IGZO layer, by adjusting top gate (TG) biases from negative to positive, the bottom gate (BG)-sweep TFTs show a VTH dependence on TG bias with two linear relationships, and subthreshold swing (SS) varies with different TG biases. In contrast, with thinner (20 nm) a-IGZO layer, VTH of the BG-sweep TFTs is linearly modulated with a single slope, and no obvious SS change is observed.
关键词： Thin-film transistors (TFTs),amorphous indium-gallium-zinc-oxide (a-IGZO),double-gate
更新于2025-09-09 09:28:46
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8.2: <i>Invited Paper:</i> Research on the Effects of Different Doping Methods on Top-Gate IGZO TFT
摘要： By N2O/N2/O2 doped the active layer and He/Ar/Al/SiNx doped the S/D of Top-Gate IGZO TFT, we have summarized the effects of different doping modes on the properties of Top-Gate IGZO TFT, including doping the active layer of Top-Gate IGZO TFT with N2O can obviously improve the electrical uniformity of devices , and doping the S/D of Top-Gate IGZO TFT with aluminum(Al) can significantly improve the NBTIS/ PBTIS of devices, etc. By optimizing the doping method, we have fabricated a device with both good electrical uniformity and good electrical properties, with threshold voltage shift (ΔVth ) of 18 points less than 1V, Mobility=8.6 cm2/V.S,Subthreshold Swing(SS) =0.26 V/dec ,Threshold Voltage（Vth）=2.9V ,ΔVth=1.54 V (NBTIS, Bias=-30V,T=80 ℃ ,Backlight=4500Nit,2000S,W/L=6/12),ΔVth= 5.28V(PBTIS,Bias=+30V，T=80℃, Backlight=4500Nit, 2000S， W/L=6/12) .
关键词： Active layer,Ion Bombardment,Top-Gate IGZO TFT,S/D,H* Diffusion,Defect state,Doping,Oxygen Concentration,Al Seize oxygen
更新于2025-09-09 09:28:46
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Oxide-Polymer Heterojunction Diodes with a Nanoscopic Phase-Separated Insulating Layer
摘要： Organic semiconductor-insulator blend films are widely explored for high-performance electronic devices enabled by unique phase separation and self-assembly phenomena at key device interfaces. Here we report the first demonstration of high-performance hybrid diodes based on p-n junctions formed by a p-type poly(3-hexylthiophene) (P3HT)-poly(methylmethacrylate) (PMMA) blend and n-type indium-gallium-zinc oxide (IGZO). The thin film morphology, microstructure, and vertical phase separation behavior of the P3HT films with varying contents of PMMA are systematically analyzed. Microstructural and charge transport evaluation indicates that the polymer insulator component positively impacts the morphology, molecular orientation, and effective conjugation length of the P3HT films, thereby enhancing the heterojunction performance. Furthermore, the data suggest that PMMA phase segregation creates a continuous nanoscopic interlayer between the P3HT and IGZO layers, playing an important role in enhancing diode performance. Thus, the diode based on an optimal P3HT-PMMA blend exhibits a remarkable 10-fold increase in forward current versus that of a neat P3HT diode, yielding an ideality factor value as low as 2.5, and a moderate effective barrier height with an excellent rectification ratio. These results offer a new approach to simplified manufacturing of low-cost, large-area organic electronics technologies.
关键词： effective barrier height,ideality factor,IGZO,P3HT,hybrid diode,Organic semiconductor/insulator blend
更新于2025-09-09 09:28:46
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Relationship Between the Mobility and the Schottky Contact in Indium-Gallium-Zinc-Oxide Thin Film
摘要： This presents the contact mechanism to understand the relationship between the Schottky contact and tunneling phenomenon on in the IGZO (Indium Gallium Zinc Oxide) Thin Film. The tunneling transistors with bi-directional ambipolar transfer characteristics were made by high potential barriers at the Schottky contact related to the depletion layer. The IGZO thin film transistor was prepared on SiOC with various annealing temperatures of 100 °C～400 °C. The performance of TFT was improved at SiOC annealed at 300 °C with the Schottky contact. The IGS curves of TFT with SiOC annealed at 300 °C showed high Ion/Ioff ratio and without the threshold voltage shift, when applied at VDS = 0.0001 V, because of the tunneling phenomenon from the band to band of diffusion currents through deep potential barrier.
关键词： IGZO,Schottky Contact,SiOC,Diffusion Current,Ambipolar Transfer Characteristics
更新于2025-09-04 15:30:14
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Study of <i>In-Situ</i> Hydrogen Plasma Treatment on InGaZnO with Atmospheric Pressure-Plasma Enhanced Chemical Vapor Deposition
摘要： In the past few years, thin film transistors have a wide range of applications on display technology, material selection and quality for its active layer is critical for device performance. Traditional amorphous silicon (a-Si) silicon has a lot of advantages such as good productivity, short process and low-cost. It also has a lot of shortcomings on these applications on TFTs such as photosensitivity, light degradation, and opacity, etc. The dispute of the material based on a-Si:H as an active layer in TFT is low field effect mobility (~1 cm2/V · S) (M. Shur and M. Hack, J. Appl. Phys. 55, 3831 (1984)), photo sensitivity (low band gap about 1.7 V) and high deposition temperature (~400 °C) (M. Shur, et al., J. Appl. Phys. 66, 3371 (1989); K. Khakzar and E. H. Lueder, IEEE Trans. Electron Devices 39, 1438 (1992)). Amorphous In–Ga–Zn–O (IGZO) had attracted attention that compared with the conventional a-Si:H, due to its good properties of simultaneously high/low conductivity with high visual transparency via doping level. Oxide-based semiconductors, such as ZnO (G. Adamopoulos, et al., Appl. Phys. Lett. 95, 133507-3 (2009); H.-C. Cheng, et al., Appl. Phys. Lett. 90, 012113-3 (2007)) and IGZO (C. J. Chiu, et al., Electron Device Letters, IEEE 31, 1245 (2010); L. Linfeng and P. Junbiao, IEEE Transactions on Electron Devices 58, 1452 (2011)) have been reported for the active channel layer. These oxide-based materials offer good electrical properties and high transparency for thin film transistors, its high transmittance can be applied to fabricate the full transparent TFT on flexible substrate. With In-situ hydrogen plasma treatment on a-IGZO produced by atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD), the material characteristics of a-IGZO is studied.
关键词： AP-PECVD,a-IGZO,In-Situ Hydrogen Plasma
更新于2025-09-04 15:30:14
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Investigation of Electrical Characteristics on AP-PECVD Fabricated Amorphous IGZO TFTs with Hydrogen Plasma Treatment
摘要： TFT panel production process can be divided into three kinds of technology. There have amorphous silicon (a-Si), low-temperature polysilicon (LTPS) and amorphous IGZO (a-IGZO) oxide. Traditional amorphous silicon (a-Si) silicon has a lot of advantages such as good productivity, short process and low-cost. It also has a lot of shortcomings on these applications on TFTs such as photosensitivity, light degradation, and opacity, etc. The dispute of the material based on a-Si:H as an active layer in TFT is low ?eld effect mobility (～1 cm2/V · S) (M. Shur and M. Hack, J. Appl. Phys. 55, 3831 (1984)), photo sensitivity (low band gap about 1.7 V) and high deposition temperature (～400 (cid:4)C) (M. Shur, et al., J. Appl. Phys. 66, 3371 (1989); K. khakzar and E. H. Lueder, IEEE Trans. Electron Devices IP: 146.185.205.202 On: Thu, 06 Dec 2018 10:11:54 39, 1438 (1992)). Amorphous In–Ga–Zn–O (IGZO) had attracted attention that compared with the conventional a-Si:H, in the past three years, a-IGZO thin ?lm transistors is more popular which compared with the other oxide semiconductors, because of its larger I on/I off ratio (>106(cid:2), smaller subthreshold swing (SS), better ?eld-effect mobility and better stability against electrical stress. Hydrogen plasma treatment is applied in improving a-IGZO TFTs active layer, which is fabricated by atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD), the electrical characteristics of a-IGZO TFTs is investigated.
关键词： a-IGZO TFTs,AP-PECVD,Hydrogen Plasma Treatment,Active Layer
更新于2025-09-04 15:30:14