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[IEEE 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Cancun (2018.8.29-2018.8.31)] 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Demonstration of an On-Chip III-V/Si Hybrid Semiconductor Optical Amplifier for Photonics Integration
摘要： We demonstrate a III-V/Si hybrid semiconductor optical amplifier at 1284 nm with on-chip gain >20 dB, output power >50 mW, internal noise-figure <7 dB, 3 dB bandwidth >40 nm, and amplification of 25 Gbps NRZ data with <1 dB power penalty at 10-12 BER.
关键词： III-V/Si hybrid,optical amplification,semiconductor optical amplifier,data centers,photonics integration
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - On the Origin of Silicon Lifetime Degradation During Anneal in III-V Material Growth Chambers
摘要： Silicon bulk lifetime degradation in III-V material growth chambers has been a major hindrance to the development of III-V/Si tandem solar cells. While the exact mechanisms responsible for this degradation remain unknown, many researchers have attributed such degradation to extrinsic contaminants that diffuse into silicon bulk during growth. In this work, we show that thermal activation of grown-in defects in ?oat zone wafers is also a key mechanism behind such degradation. Annealing of the wafer at 1000 ?C to remove these defects, together with a SiNX diffuse barrier layer deposition are both required to preserve the silicon bulk lifetime.
关键词： grown-in defects,diffuse barrier,III-V/Si,silicon bulk lifetime degradation
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Reliability of CMOS-Compatible Ti / n-InP and Ti / p-InGaAs Ohmic Contacts for Hybrid III-V / Si Lasers
摘要： Electrical properties of CMOS-compatible titanium contacts on n-InP and p-In0.53Ga0.47As using 300 mm tools, in the scope of integrating them on III-V / Si hybrid lasers, are presented. Electrical behaviors after i) processing, ii) integration and back-end sequences, and iii) several simulated laser uses were investigated.
关键词： III-V / Si hybrid lasers,n-InP,reliability,CMOS-compatible,titanium contacts,p-InGaAs
更新于2025-09-16 10:30:52
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[IEEE 2018 7th Electronic System-Integration Technology Conference (ESTC) - Dresden, Germany (2018.9.18-2018.9.21)] 2018 7th Electronic System-Integration Technology Conference (ESTC) - UV Assisted Chip-on-Wafer Direct Transfer Bonding (CoW DTB)
摘要： Chip-on-Wafer Direct Transfer Bonding (CoW DTB) technology employing a UV assisted chip transfer mechanism for the high-accuracy direct bonding application including III-V/Si, 2.5D/3D/Fan-Out integration was proposed. Basic experiments of the chip transfer process using the glass bond tool, which enables pressing the backside of the chips through the carrier sheet and UV irradiation to a UV peeling-type adhesive layer, were conducted. The experimental results show this novel process achieved stable chip transfer by optimizing the carrier sheet, glass bond tool design, and parameters such as UV irradiation intensity and time.
关键词： Oxide Bonding,III-V/Si,Chip-on-Wafer (CoW),Direct Bonding,Three-dimensional Integrated Circuit (3DIC),Fan-Out (FO)
更新于2025-09-04 15:30:14