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Advances in III-V semiconductor infrared absorbers and detectors
摘要： Advances in bulk III-V semiconductor material such as InGaAsSb and metamorphic InAsSb, as well as in a variety of type-II superlattices such as InGaAs/GaAsSb, InAs/GaSb, and InAs/InAsSb, have provided continuously adjustable cutoff wavelength coverage from the short to the very long wavelength infrared. We perform basic theoretical analysis to provide comparisons of different infrared materials. We also briefly report experimental results on a mid-wavelength InAs/InAsSb type-II superlattice unipolar barrier infrared detector and a focal plane array with significantly higher operating temperature than InSb.
关键词： unipolar barrier,MWIR,infrared detector,e-SWIR,LWIR,antimonide,type-II superlattice,nBn,effective mass
更新于2025-09-23 15:23:52
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Realization of a infrared detector free of bandwidth limit based on quartz crystal tuning fork
摘要： A new type of photoelectric detector based on a standard quartz crystal tuning fork (QCTF) with resonant frequency of ～32 kHz is developed for infrared spectroscopy applications. Analogous to the photoelectric effect of traditional semiconductor detectors, we utilize the piezoelectric effect of the QCTF to gauge the light intensity. To demonstrate this technique, the spectral absorption features of C2H2 molecule have been recorded and compared with a commercial mercury cadmium-telluride (MCT) detector. The proposed detection technique may pave a new way towards developing a new type of photodetector without bandwidth limit and complicated cryogenic cooling.
关键词： Infrared detector,Piezoelectric effect,QCTF,Laser spectroscopy
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE 13th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) - Singapore, Singapore (2018.4.22-2018.4.26)] 2018 IEEE 13th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) - A Pyroelectric Infrared Detector By Integrating LiTaO<inf>3</inf> Single Crystal with Grooved Quartz Using UV Adhesive
摘要： A new pyroelectric infrared detector structure has been fabricated by integrating LiTaO3 single crystal with air gap thermal insulation structure using MEMS technology. The device shows excellent pyroelectric properties and thermal performance. Results demonstrate that the pyroelectric performance of detectors with air gap thermal insulation structure can be improved by the area of air gap. It was demonstrated that if the area of air gap got increased, the thermal time constant of LiTaO3 bulk would be more well-distributed and the pyroelectric performance of detector would be improved.
关键词： air gap,MEMS,pyroelectric infrared detector,thermal insulation,LiTaO3
更新于2025-09-23 15:22:29
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Minority carrier lifetime and diffusion length in type II superlattice barrier devices
摘要： The minority carrier lifetime in p-type InAs/GaSb type II superlattices (T2SLs) is quite short, typically in the region of tens of nanoseconds. In spite of this, T2SLs are becoming a viable alternative to Mercury Cadmium Telluride as the sensing material of choice for high end MWIR and LWIR infrared detectors. For example, SCD now manufactures a 640 × 512 format, 15 μm pitch LWIR focal plane array detector, with a quantum e?ciency close to 50%, a pixel operability of > 99.5%, and a dark current only about one order of magnitude larger than the state of the art Rule 07 value. A key to the very high performance of this detector is the use of an XBp barrier architecture that both suppresses the G-R current and allows stable passivation to all steps of the fabrication process. Since both the dark-current and photo-current in the XBp structure are di?usion limited, measurements of these quantities as a function of the device dimension provide an excellent vehicle for estimating the minority carrier lifetime and di?usion length, when performed in conjunction with k?p calculations of the T2SL density of states. Typical lifetime results are presented, which are consistent with values found by others using direct measurements. Di?usion lengths are reported in the range 3–7 μm, although these are not necessary limiting values.
关键词： Type II superlattice,Infrared detector,XBp detector,Di?usion length,InAs/GaSb superlattice,K?p model,Lifetime,Bariode
更新于2025-09-23 15:21:01
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Ultrahigh-Speed Mid-Infrared Photodetectors With 2-D Electron Gas in a CdTe/PbTe Heterojunction
摘要： A CdTe/PbTe heterojunction (HJ) yields two-dimensional electron gas (2DEG) with a high electron density and mobility. Ultrahigh-speed and room-temperature operating mid-infrared photodetectors are developed with the 2DEG. The photoresponse of the detectors originates from the intrinsic response of PbTe by virtue of the conduction-band and valence-band alignment of the HJ. The extremely short rise and decay photoresponse time demonstrate a major advantage of the 2DEG. At λ = 3.0 μm and a bias voltage of 100 mV, the responsivity and detectivity reach 0.94 A/W and 2 × 1010 Jones, respectively. The excellent performance of the detectors renders promising applications in novel mid-infrared frequency detection systems.
关键词： two-dimensional electron gas (2DEG),room-temperature (RT) operation,ultrahigh-speed response,Detectivity,mid-infrared detector
更新于2025-09-23 15:21:01
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Design, fabrication, and characterization of a high-performance CMOS-compatible thermopile infrared detector with self-test function
摘要： This paper presents the design, fabrication and characterization of a CMOS-compatible thermopile infrared (IR) detector with self-test function based on XeF2 front-side dry etching. In order to achieve better performance, a heavily doped N/P-polysilicon is utilized to form thermocouples, and XeF2 front-side isotropic etching is adopted to release and thermal isolation. At the same time, a platinum thermopile IR detector. IR radiation sensing shows that the detector achieves relatively high responsivity of 160.03 V/W and detectivity of 9.75×107 cm?Hz1/2 and a extremely short response time of 2.5 ms in air at room temperature. In addition, self-test measurement is conducted and validated by applying a voltage to the heater. Compared with traditional methods for detecting thermopile performance, this method has obvious convenience and simplicity, which provides a effective way for performance monitoring of thermal-based devices.
关键词： high-performance,thermopile infrared detector,heater,self-test
更新于2025-09-23 15:21:01
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Preparation and characterization of lead zirconate titanate thin films grown by RF magnetron sputtering for pyroelectric infrared detector arrays
摘要： One of the challenges in fabricating pyroelectric infrared (PIR) detector arrays using microelectromechanical system (MEMS) technique lies in finding an optimal growth method of sensing thin films. In this study, lead zirconate titanate (PbZr0.3Ti0.7O3, PZT) thin films were successfully prepared on Pt/TiO2/Si3N4/SiO2/Si substrates by RF magnetron sputtering. The structure, morphology and electrical properties of the films annealed at different temperatures were investigated. PZT thin films deposited at a working pressure of 3.0 Pa with an Ar/O2 gas flow ratio of 80/20 and annealed at 700 °C exhibited smooth surface and excellent dielectric, ferroelectric and pyroelectric properties. The dielectric constant and the loss tangent of the films are 500 and 0.018 at 1 kHz, respectively. The remnant polarization (Pr) and the coercive field (Ec) of the films are 33 μC cm?2 and 42 kV cm?1, respectively. The pyroelectric coefficient of the films is 0.033 μC cm?2 K?1. The value of the figure of merit of detectivity (FD) of PZT thin films reaches up to 1.29 × 10?5 Pa?1/2, which indicates that the films have met the requirements for sensitive layers utilized in pyroelectric infrared detector arrays.
关键词： RF magnetron sputtering,Pyroelectric infrared detector arrays,PZT thin films
更新于2025-09-23 15:21:01
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[IEEE 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) - Sao Paulo, Brazil (2019.8.26-2019.8.30)] 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) - Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector
摘要： A submonolayer quantum dot infrared photodetector (SML-QDIP) was grown on a GaAs(001) substrate by molecular beam epitaxy and processed using conventional optical lithography, wet etching and electron-beam metallization. Additionally, a side of the device was polished at 45 degrees in order to allow optical measurements with s- and p- polarized light. The electro-optical properties of the device were investigated both in normal incidence and at 45 degrees in order to study the quantum confinement of the SML-QD along the lateral and vertical directions. The s-to-p photocurrent ratio was found to be between 0.10 and 0.43, showing that, in this new type of quantum dot, the lateral confinement is still weaker than along the vertical direction, but is better than the one of conventional QDs fabricated in the Stranski-Krastanov growth mode. The maximum specific detectivity in normal incidence was 1.3×1011 cm Hz1/2/W at 30 K and 0.9V.
关键词： quantum dot,GaAs,molecular beam epitaxy,infrared detector,photolithography,submonolayer
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - On-Chip Excessive Heating Protection Scheme for Uncooled Micro-Bolometer Imagers
摘要： Joule heating effect of micro-bolometer sensors heats the elements rapidly during readout, and longtime heating might cause permanent damage of the detector. To solve this problem, we proposed a self-protection scheme based on an analog row select length of time detection circuitry. The protection circuit is effective for various sequential errors and improves the robustness of the whole detector. By implementing a cascaded OR-gate logic with trimmed edge delay, the row-level selection circuit layout is more regular with reduced area. To verify the proposed scheme, a 640×512 array format uncooled infrared detector with 17μm pixel pitch is designed and fabricated in 0.18μm CMOS process. Power consumption of the circuits is below 50μW and the measured protection threshold of row period is around 360μs.
关键词： self-protection,joule heating,micro-bolometer,uncooled infrared detector
更新于2025-09-11 14:15:04
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[IEEE 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Berlin, Germany (2019.6.23-2019.6.27)] 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Micromachined Uncooled Si <sub/>x</sub> Ge <sub/>y</sub> O <sub/>1-x-y</sub> Microbolometer Integrated Metasurface for Uncooled Infrared Detection
摘要： This paper presents a study of metasurface integrated uncooled infrared (IR) silicon germanium oxide (Si-Ge-O) microbolometers for Long Wavelength Infrared (LWIR) detection. The inclusion of the metasurface permits engineering the IR absorptance with respect to wavelength. Absorption by the metasurface eliminates the need for a ?- wave resonant cavity under the microbolometer. In addition, the metasurface can significantly improve the electrical performance of the temperature-sensing layer. Experimental results show an increase in the Temperature Coefficient of Resistance (TCR) and a decrease in the resistivity of the amorphous Si-Ge-O films. These parameters scale with the periodicity and area fraction of the metasurface. The voltage noise power spectral density was reduced by annealing the devices in vacuum. The measured responsivity and detectivity approached 104 V/W and 109 cm Hz1/2/W to filtered blackbody infrared radiation.
关键词： Infrared detector,Metasurface,TCR,Si-Ge-O,Microbolometer,Noise
更新于2025-09-11 14:15:04