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Formation and Characterization of Shallow Junctions in GaAs Made by Ion Implantation and ms-Range Flash Lamp Annealing
摘要： With the demand of aggressive scaling in nanoelectronics, further progress can be realized by integration of high mobility semiconductors, such as III–V compound semiconductors, with complementary metal-oxide-semiconductor (CMOS) technology. In this study, the formation of shallow n–p and p–n junctions in GaAs utilizing ion implantation of S and Zn, respectively, followed by millisecond-range flash lamp annealing (FLA) is presented. The distribution of implanted elements obtained by secondary ion mass spectrometry (SIMS) shows that the FLA process can effectively suppress the diffusion of dopants. Simultaneously, the ms-range annealing is sufficient to recrystallize the implanted layer and to activate the dopants. Formation of p–n and n–p junctions is confirmed by current–voltage characteristics. The ratio of reverse to forward current can reach up to 1.7 × 10^7 in the n-GaAs:Zn case.
关键词： GaAs,ion implantation,shallow junctions,flash lamp annealing
更新于2025-09-23 15:23:52
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Diffusion of Ar atoms implanted in a TiO2 matrix studied with Temperature Programmed Out-Diffusion?
摘要： The diffusion of noble gas argon in the near-surface region of rutile TiO2 has been explored with the Temperature Programmed Out-Diffusion (TPOD) method. The Ar atoms were deposited in a several-nanometer-deep layer of the single-crystal TiO2(110) surface by bombardment with 1–5 keV energy Ar ions. Subsequently, in the TPOD experiments this sample was heated at a linear rate and the out-diffusion of argon was monitored with a mass-spectrometer. Surface conditions were probed with Auger Electron Spectroscopy (AES) and Low-Energy Electron Diffraction (LEED). The experimental results were analyzed with the aid of numerical simulations. The measurements showed a dependence of the Ar diffusion rates on the concentration of buried argon and composition of the surface layer. The kinetic parameters of Ar diffusion in pristine rutile TiO2 were estimated as Ea = 104 kJ/mol and D0 = 6 ? 10?9 m2/s. A distinctive diffusion regime, related to the rock salt TiO phase formation, were identified.
关键词： Sputtering,TiO2,Low-energy ion implantation,Solid diffusion,Ar
更新于2025-09-23 15:23:52
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Effect of monatomic and molecular ion irradiation on time resolved photoluminescence decay in GaN
摘要： Optical effects induced in silicon-doped wurtzite (0001) GaN epilayers by keV monatomic and molecular ion irradiation were experimentally investigated. Results were analyzed together with data on structure defect formation. In all the cases under consideration, an increase in the collision cascade density (the cases of molecular and heavy atomic ion bombardment) enhances the stable damage accumulation rate and, accordingly, intensifies quenching of luminescence. The processes of PL suppression were theoretically considered as an increase of surface recombination rate of nonequilibrium photo-excited charge carriers due to production of stable damage at the irradiated subsurface layer. It is shown that carrier diffusion determines PL decay time shortening in the shallow implantation cases studied.
关键词： Radiation damage,Photoluminescence,Collision cascade density,Time-resolved PL,Charge carrier diffusion,Ion implantation,GaN
更新于2025-09-23 15:23:52
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Enhanced nonlinear optical properties of LiNbO3 crystal embedded with CuZn alloy nanoparticles by ion implantation
摘要： LiNbO3 crystal, as a typical nonlinear optical material, has attracted considerable interest in photonic device applications. However, LiNbO3 shows weak nonlinear optical responses due to its low laser damage threshold. Herein, the optical nonlinearities of LiNbO3 are enhanced by inducing CuZn alloy nanoparticles (NPs). The structural and optical properties of LiNbO3 with embedded NPs were investigated in detail. The third-order nonlinear susceptibilities of CuZn: LiNbO3 nanocomposites exhibit nearly 4 orders of magnitude greater than the untreated LiNbO3 due to the localized surface plasmon resonance effect. Furthermore, the nanocomposites suffer conversion from reverse-saturable absorption to saturable absorption compared with the pure LiNbO3. This feature makes the nanocomposites a potential saturable absorber leading to the realization of efficient pulse lasers.
关键词： Ion implantation,Optical nonlinearities,CuZn alloy nanoparticles,Nonlinear materials
更新于2025-09-23 15:23:52
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Tuning the electrical properties of graphene oxide by nitrogen ion implantation: Implication for gas sensing
摘要： Tailoring the electrical properties of graphene oxide (GO) is one of the important requirements for its application in future electronic devices. A modified Hummer’s method was employed in the preparation of GO and spray coated on glass substrates, subsequently drying at 60 °C for 6 h. The as prepared samples were implanted with 100 keV nitrogen ions at the fluences of 1E15, 5E15 and 1E16 ions/cm2. A peak shift to higher 2θ in XRD pattern indicates the reduction of GO to rGO after N ion implantation. The intensity ratio of G and D bands (IG/ID) for GO derived from the Raman analysis increased from 0.97 to 1.02 after implantation (1E16 ions/cm2). The EDS analysis confirms the implantation of N ions in GO. The electrical conductivity improved as a function of fluence, and observed to be high for the sample of 1E16 ions/cm2, and is tested for methanol sensing. Concentration dependent methanol sensing shows 5.9% response for 300 ppm. Above results show that ion implantation is a promising method for controlled reduction of GO for tuning the electrical properties.
关键词： Ion implantation,Gas sensing,Graphene oxide,Reduced graphene oxide
更新于2025-09-23 15:23:52
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Damage and photoluminescence analysis of RbTiOPO4 crystals induced by europium ion implantation
摘要： RbTiOPO4 crystals were implanted by 400keV europium (Eu) ions to a fluence of 5×1015 ions/cm2 at room temperature. Additive isochronal thermal annealing processes were performed subsequently in Ar atmosphere at 600°C and 700°C for 30min. The lattice damage and elemental distributions in the crystals were investigated by Rutherford Backscattering Spectrometry (RBS) and RBS in channelling mode (RBS/C) using 1.4 MeV and 2.1 MeV He+ ions. RBS/C results reveal that Eu implantation led to lattice damage and formation of amorphous layer at the surface. Thermal annealing at 600°C results in partial damage recovery. The increase of annealing temperature caused further decrease of damage and Eu to diffuse to both sides. The photoluminescence (PL) measurements of Eu implanted RbTiOPO4 were performed as a function of annealing temperature, the results indicated the defects induced by implantation reduce the luminescence activation. The luminescence performance was improved significantly after annealing, a strong main peak appeared at 612 nm, and the other peak distributions coincide with the excitation characteristics of Eu. The profiles of PL spectra of annealed sample remain almost the same at temperatures from 5K to 300K, suggesting good luminescence stability of the Eu doped RbTiOPO4 crystal.
关键词： Ion implantation,Europium,Damage,Photoluminescence
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Study on Threshold Voltage Hysteresis in GaN-Based Vertical Trench MOSFETs
摘要： In this paper, we studied hysteresis in transfer characteristics of GaN-based vertical trench MOSFETs fabricated using different process technologies for n+-GaN source layer. It was found that the device with epitaxially-grown source region can suppress hysteresis in the transfer characteristics compared to that with implanted source region.
关键词： ion implantation,threshold voltage,epitaxial growth,hysteresis,GaN,trench,MOSFET
更新于2025-09-23 15:22:29
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Room-temperature photoluminescence lifetime for the near-band-edge emission of (000 1 ˉ ) p-type GaN fabricated by sequential ion-implantation of Mg and H
摘要： Photoluminescence (PL) spectra of (000(cid:2)1) N-polar p-type GaN fabricated by using the sequential ion-implantation of Mg and H with subsequent high temperature annealing exhibited the near-band-edge (NBE) emission at 300 K. The longest PL lifetime (sPL) for the NBE emission of the sample with Mg and H concentrations of 1 (cid:2) 1019 and 2 (cid:2) 1020 cm(cid:3)3, respectively, annealed at 1230 (cid:4)C was 18 ps at 300 K. This value is almost comparable to that of the (0001) Ga-polar p-type Mg-doped GaN (p-GaN:Mg) homoepitaxial ?lm of the same Mg concentration. By correlating sPL and the concentration of major vacancy-type defects quanti?ed using positron annihilation spectroscopy, the electron capture-cross-section (rn) of the major nonradiative recombination centers (NRCs), namely, clusters of Ga vacancies (VGas) and N vacancies (VNs) such as (VGa)3(VN)3, is estimated at a few times 10(cid:3)13 cm2. This rn value is also comparable to that of the major NRCs in p-GaN:Mg epilayers, namely, VGa(VN)2 or VGa(VN)3, although the clustering sizes of the defects are different. These rn values are commonly larger than the hole capture-cross-section (rp ? 7 (cid:2) 10(cid:3)14 cm2) of the major NRCs, VGaVN divacancies, in n-type GaN.
关键词： p-type GaN,ion-implantation,Mg and H,electron capture-cross-section,photoluminescence,nonradiative recombination centers
更新于2025-09-23 15:21:21
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<i>(Invited)</i> Proximity Gettering Design of Hydrocarbon Molecular Ion Implanted Silicon Wafers Using Direct Bonding Technique for Advanced CMOS Image Sensors: A Review
摘要： We developed high gettering capability silicon wafers for advanced CMOS image sensors using hydrocarbon molecular ion implantation and surface activated direct wafer bonding (SAB). We found that this novel wafer has three unique characteristics for the improvement of CMOS image sensor device performance. The first is metallic impurity gettering capability in the hydrocarbon ion implantation projection range during CMOS device fabrication. The second is the oxygen out-diffusion barrier effect; this wafer can control out-diffusion to the device active region from the CZ grown silicon substrate during CMOS device heat treatment. The third is the hydrogen passivation effect; hydrogen passivates to the Si/SiO2 gate oxide interface state defects which out-diffuse to the device active region from the hydrocarbon ion implantation projection range during the CMOS device fabrication. Moreover, we demonstrated that this novel wafer can improve the pn-junction leakage current under the actual device fabrication.
关键词： CMOS image sensors,hydrocarbon molecular ion implantation,surface activated direct wafer bonding,gettering capability,oxygen out-diffusion barrier,hydrogen passivation
更新于2025-09-23 15:21:21
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Surface characteristics of nitrogen ion implanted CR-39 polymer: RBS studies
摘要： This paper investigates the surface characteristics of nitrogen ion implanted CR- 39 polymer. The specimens were implanted with 100 keV N+ beam to various ?uences of 1 × 1015, 1 × 1016 and 2 × 1016 ions cm?2. The ion implantation induced modi?cations in these specimens were analyzed by Rutherford Backscattering Spectrometry (RBS) and UV- Visible spectroscopy. RBS studies reveal that the structure of the virgin CR-39 specimen has been modi?ed completely after N+ implantation. The spatial distribution in the form of carbonization, projected range, retained dose and atomic concentration of implanted nitrogen have been estimated using RBS spectra. RUMP analysis revealed that for the implanted specimen at ?uence 2 × 1016 N+ cm?2, the carbon concentration increases from 32 at.% to 43 at.% and oxygen concentration from 19 at.% to 26 at.% respectively near the surface. This increase in the concentration of carbon points towards the carbonization in the implanted layers. Furthermore, UV–Visible transmission spectra demonstrate that for higher ?uences, almost complete UV region is blocked; making CR-39 a viable functional material for UV blocking devices.
关键词： RBS,Ion implantation,UV–Visible spectroscopy,CR-39
更新于2025-09-23 15:21:01