- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Facile synthesis of tin monosulfide nanosheets via physical vapour deposition and their near-infrared photoresponse
摘要： Two-dimensional layered materials (TDLMs), such as tin sulfide (SnS2), have attracted significant attention due to their vast potential applications in the fields of electronics, optoelectronics, energy conversion, and storage. Tin monosulfide (SnS) is an intrinsic p-type semiconductor in the family of TDLMs. Further explorations of SnS requires the development of efficient synthesis techniques. Here, we report SnS nanosheets grown via a physical vapour deposition (PVD) approach. The morphology was characterized using Raman spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM). These SnS nanosheets exhibit a square shape with a smooth surface having an average lateral size of 7 μm and a thickness of 12 nm. No impurities were observed in the SnS nanosheets. Furthermore, photodetectors based on such SnS nanosheets were fabricated. The results show that the as-grown SnS has an excellent photo-response performance for an 850-nm laser with a high responsivity of 1604 AW-1, an external quantum efficiency of 2.34 × 105% and a detectivity of 3.42 × 1011 jones, which are larger than those values reported for previous SnS-based photodetectors. Moreover, the rise and fall times are 7.6 and 29.9 ms, respectively. Our work provides a strategy to obtain high-purity and ultrathin SnS while indicating that SnS has a great potential in applications for near-infrared photodetectors.
关键词： near-infrared photoresponse,tin monosulfide,nanosheets,physical vapour deposition
更新于2025-09-11 14:15:04
-
Halogenated Antimonene: One‐Step Synthesis, Structural Simulation, Tunable Electronic and Photoresponse Property
摘要： Surface functionalization is considered to be an effective and versatile strategy to tailor intrinsic electronic and optoelectronic properties of 2D materials. In this work, surface-decorated few-layer antimonene is synthesized by a one-step electrochemical exfoliation and synchronous halogenation method in halogen-containing an ionic liquid–based electrolyte at room temperature. The prepared halogenated antimonene nanosheets are composed of oxygen- and halogen-decorated amorphous and crystalline domains. The structural reconstructions and evolutions of halogenated antimonene are further revealed by ab initio molecular dynamics simulations and first-principles calculations. The band structures and optical properties of antimonene can be tailored after amorphization and surface functionalization, depending on the reactivity of different halogens. The photoresponse performance of the halogenated antimonene is further evaluated by photoelectrochemical measurement. Exhibiting self-powered photoresponse behavior, their photocurrent density increases with the increases of external bias potential and light intensity. This work proposes a new idea of tuning the optoelectronic properties of 2D materials by synchronous halogenation in the facile one-step electrochemical synthesis process. Benefiting from this facile synthesis procedure, the halogenation of antimonene may shed light on chemical functionalization of other 2D materials for electronic and optoelectronic applications.
关键词： photoresponse performance,halogenation,antimonene,DFT calculations,2D materials
更新于2025-09-11 14:15:04
-
Charge Transport Behavior and Ultrasensitive Photoresponse Performance of Exfoliated F <sub/>16</sub> CuPc Nanoflakes
摘要： Air-stable, photosensitive copper hexadecafluorophthalocyanine (F16CuPc) is a promising n-type semiconductor for organic electronics and optoelectronics. However, the performance of F16CuPc-based devices is significantly limited by the poor crystallinity of thin films. Here, the charge transport and electrical contact behavior of F16CuPc nanoflakes, mechanically exfoliated from needle-like bulk single crystals, are probed by analyzing the temperature-dependent carrier mobility and conductance, where the multiple-trap/release- and band-like transport mechanism govern the charge transport at different temperature ranges and carrier densities. F16CuPc nanoflake-based field effect transistors (FETs) exhibit high on-state current and ON/OFF ratio, one-order magnitude higher than those of reported F16CuPc nanowires, thin films, and nanoribbons. Besides, F16CuPc nanoflake-based phototransistors exhibit attractive photoresponse performance in the spectral range of 300–750 nm even at quite low operating source–drain voltage (1 V), with maximum photoresponsivity of 19 A W?1, detectivity of 8 × 1012 Jones, and fast response speed of 36 ms, which is attributed to the single-crystalline characteristic of nanoflakes, and the resultant efficiently exciton diffusion and charge transport. The work demonstrates that 2D organic nanoflakes with single-crystalline feature will be promising candidates for flexible electronic and optoelectronic devices.
关键词： organic phototransistors,broadband photoresponse,charge transport,F16CuPc nanoflakes
更新于2025-09-11 14:15:04
-
Enhanced photovoltaic efficiency and persisted photoresponse switchability in LaVO3/Pb(Zr0.2Ti0.8)O3 perovskite heterostructures
摘要： For the ferroelectric photovoltaics, it is challenging to enhance the power conversion efficiency (PCE) without sacrificing the photoresponse switchability. Here, we demonstrate that enhanced PCE and good photoresponse switchability can be simultaneously achieved in perovskite heterostructures comprising narrow-gap semiconductor LaVO3 (LVO) and ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT). The LVO(24 nm)/PZT(120 nm) based device exhibits a ~5-fold enhancement in PCE compared with the PZT-only based device, which is attributed to the enhanced absorption from the LVO layer and the built-in field at the LVO/PZT interface facilitating the separation of photo-generated e-h pairs. In addition, the switched photovoltage of the LVO/PZT based device is above 1 V, which is as large as that of the PZT-only based device. This persisted photoresponse switchability is obtained because the polarization can be fully switched in the LVO/PZT based devices when the LVO thickness is less than 24 nm. Our finding therefore provides a promising route for the development of the high-efficiency and highly switchable ferroelectric photovoltaic devices.
关键词： perovskite heterostructures,ferroelectric photovoltaics,LaVO3,photoresponse switchability,power conversion efficiency,Pb(Zr0.2Ti0.8)O3
更新于2025-09-11 14:15:04
-
Layer-Dependent Properties of Ultrathin GeS Nanosheets and Application in UV-vis Photodetector
摘要： Two-dimensional germanium sulfide (GeS), an analogous of phosphorene, has attracted broad attention owing to its excellent environmental stabilities, fascinating electronic, optical properties and applications in various nanodevices. In spite of the current achievements on 2D GeS, the report of ultrathin few-layer GeS nanosheets within 5 nm are still lack. Here in this contribution, we have achieved preparation of ultrathin few-layer GeS nanosheets with thicknesses of 1.3 ± 0.1 nm (~3L), 3.2 ± 0.2 nm (~6L) and 4.2 ± 0.3 nm (~8L) via typical liquid phase exfoliation (LPE) method. Based upon various experimental characterizations and first principles calculations, the layer-dependent electronic, transport and optical properties are investigated. For the few-layer GeS nanosheets, enhanced light absorption in UV-vis region and superior photoresponse behavior with increasing layer number is observed, while for the thin films above 10 nm, the properties degenerate to the bulk feature. In addition, the as-prepared ultrathin nanosheets manifest great potential in the applications of photoelectrochemical (PEC)-type photodetectors, exhibiting excellent and stable periodic photoresponse behavior under the radiation of white light. The ~8L-GeS based photodetector performs superior performance than the thinner GeS nanosheets (<4 nm), even better as compared to the bulk or film (above 10 nm) counterparts, in terms of higher photoresponsivity along with remarkable photodetection performance in the UV-vis region. This work not only provides direct and solid evidence of layer-number evolutional band structure, mobility and optical properties of ultrathin 2D GeS nanosheets, but also promotes the foreseeable applications of 2D GeS as energy-related photoelectric devices.
关键词： photoresponse performance,layer-dependent property,2D material,few-layer GeS,photodetector
更新于2025-09-11 14:15:04
-
Enhanced Near‐Infrared Photoresponse of Inverted Perovskite Solar Cells Through Rational Design of Bulk‐Heterojunction Electron‐Transporting Layers
摘要： How to extend the photoresponse of perovskite solar cells (PVSCs) to the region of near-infrared (NIR)/infrared light has become an appealing research subject in this field since it can better harness the solar irradiation. Herein, the typical fullerene electron-transporting layer (ETL) of an inverted PVSC is systematically engineered to enhance device’s NIR photoresponse. A low bandgap nonfullerene acceptor (NFA) is incorporated into the fullerene ETL aiming to intercept the NIR light passing through the device. However, despite forming type II charge transfer with fullerene, the blended NFA cannot enhance the device’s NIR photoresponse, as limited by the poor dissociation of photoexciton induced by NIR light. Fortunately, it can be addressed by adding a p-type polymer. The ternary bulk-heterojunction (BHJ) ETL is demonstrated to effectively enhance the device’s NIR photoresponse due to the better cascade-energy-level alignment and increased hole mobility. By further optimizing the morphology of such a BHJ ETL, the derived PVSC is finally demonstrated to possess a 40% external quantum efficiency at 800 nm with photoresponse extended to the NIR region (to 950 nm), contributing ≈9% of the overall photocurrent. This study unveils an effective and simple approach for enhancing the NIR photoresponse of inverted PVSCs.
关键词： bulk-heterojunctions,electron-transporting layers,inverted perovskite solar cells,nonfullerene acceptors,NIR photoresponse
更新于2025-09-11 14:15:04
-
Piezoelectric Modulation of Broadband Photoresponse of Flexible Tellurium Nanomesh Photodetectors
摘要： Flexible photodetector shows great potential applications in intelligent wearable devices, health monitoring, and biological sensing. In this work, single crystal β-tellurium nanowires were grown on flexible muscovite by molecular beam epitaxy, constructing high-density ordered nanomesh structure. The prepared photodetectors based on tellurium nanomesh exhibit excellent mechanical flexibility, fast response in a broad range from ultraviolet to near-infrared, and good photosensitivity. We found that the flexible photodetectors with Shottky contact drastically suppressed dark current, while the response speed was lowered in comparison to the devices with ohmic contact, as holes would take long time to tunnel through the Shottky barrier between metal and p-type Te. Moreover, photoresponse of flexible Shottky photodetectors can be modulated by piezoelectricity of tellurium, and pronounced photocurrent increase after many times of bend. Under external stress, polarization charges could tune Shottky barrier height of the metal/tellurium, resulting in variation of photocurrent. The research not only explores the broadband photoresponse and piezoelectric effect of tellurium nanomesh, but also promotes the integration and development of broadband flexible optoelectronic devices.
关键词： tellurium nanomesh,piezoelectric effect,broadband photoresponse,molecular beam epitaxy,flexible photodetector
更新于2025-09-11 14:15:04
-
Wearable Gallium Oxide Solar-blind Photodetectors on Muscovite Mica Having Ultra-High Photoresponsivity And Detectivity With Added High Temperature Functionalities
摘要： Wearable Gallium oxide solar-blind photodetector fabricated on muscovite mica is reported for room temperature as well as high temperature operations. The ultra-high photoresponsivity of 9.7 A/W is obtained for 5V applied bias at room temperature under 75 μW/cm2 weak illumination of 270 nm wavelength. The detector enables very low noise equivalent power (NEP) of 9×10-13 W/Hz1/2 and ultra-high detectivity of 2×1012 jones which shows the magnificent detection sensitivity. Further, bending tests are performed for robust utilization of flexible detectors up to 500 bending cycles with each bending radius of 5 mm. After 500 bending cycles, device shows slight photocurrent decrease. The bending performances exhibit excellent potential for wearable applications. Moreover, photocurrent and dark current characteristics above room temperature demonstrate the outstanding functionalities till 523K temperature which is remarkable for flexible photodetectors. The obtained results show the potential of Gallium oxide solar-blind photodetectors at room temperature and high temperatures environments which pave the ways for futuristic smart and flexible sensors.
关键词： photoresponse,Gallium Oxide,Solar-blind photodetectors,detectivity,flexible photodetector,Mica
更新于2025-09-11 14:15:04
-
Unravelling the Catalytic and Plasmonic Roles of g-C3N4 Supported Ag and Au Nanoparticles Under Selective Photoexcitation
摘要： Herein, the photocatalytic roles of silver (Ag) and gold (Au) nanoparticles (NPs) on graphitic carbon nitride (CN) nanosheets is thoroughly investigated under UV (250-380 nm), UV-Vis (256-600 nm) and green laser (532 nm). Under UV light, Ag and Au NPs capture photogenerated electrons from CN and function as co-catalyst. The dual roles of Ag and Au, as co-catalyst as well as a plasmonic photocatalyst, lead to reduced RhB degradation under UV-Vis light. Bandgap excitation occurs in unison with surface plasmon resonance (SPR) under UV-Vis light. The synchronicity leads to forward and back electron transfer at the metal-semiconductor junction, thus increasing interfacial carrier recombination. The plasmonic systems show the best result under visible light (532 nm). Plasmonic hot electron injection from metal to CN triggers the SPR driven photocatalysis. The photoconductivity current-voltage (I-V) measurement indicates enhanced free-carrier generation under white light (400-730 nm) as well as under selective excitations at 405 nm, 470 nm, and 530 nm, respectively. These freely available carriers actively participate in photocatalysis.
关键词： photoresponse,defects,photoluminescence,Photocatalytic,surface plasmon
更新于2025-09-11 14:15:04
-
Preparation and some properties of Mg <sub/>2</sub> Si <sub/>0.53</sub> Ge <sub/>0.47</sub> single crystal and Mg <sub/>2</sub> Si <sub/>0.53</sub> Ge <sub/>0.47</sub> pn-junction diode
摘要： This paper reports the results on fabrication methodology and photoresponse characteristics of Mg2Si0.53Ge0.47 pn-junction photodiode. At first, we have grown a Mg2Si0.53Ge0.47 single crystal with the Vertical Bridgman growth process. The grown crystal was characterized structurally and electrically by XRD, Laue, and Hall Effect measurements. XRD revealed the single-phase composition, Mg2Si0.53Ge0.47, of the grown crystal ingot. The clear Laue symmetrical diffraction pattern showed the single crystalline nature of the grown crystal. The Hall Effect measurement revealed the n-type conduction and the moderate Hall mobility (258 cm2/Vs), electrical resistivity (6.03E-02 ?. cm), and carrier density (4.02E+17 cm-3) of the grown crystal. Such carrier density is low enough to allow depletion region formation in case of pn-junction diodes. In that sense, we have made up for the first time Mg2Si0.53Ge0.47 pn-junction photodiode by thermal diffusion of a thin Ag layer into n-Mg2Si0.53Ge0.47 substrate. The fabricated diode had an obvious rectification behavior and demonstrated a clear zero-biased photoresponse in the wavelength range from 0.95 to 1.85 μm, indicating its prominence for IR sensation in that wavelength domain.
关键词： IR sensation,photoresponse,pn-junction diode,Mg2Si0.53Ge0.47,single crystal
更新于2025-09-10 09:29:36