研究目的
To fabricate and characterize Mg2Si0.53Ge0.47 single crystal and pn-junction diode for IR sensation applications.
研究成果
The Mg2Si0.53Ge0.47 single crystal and pn-junction diode demonstrated promising properties for IR sensation applications, with a clear photoresponse in the 0.95 to 1.85 μm wavelength range. This indicates potential for eco-friendly IR sensors in night vision applications.
研究不足
The study focuses on the fabrication and initial characterization of Mg2Si0.53Ge0.47 pn-junction diodes. Further optimization of diode parameters and exploration of other fabrication techniques could enhance performance.
1：Experimental Design and Method Selection:
The study involved the growth of Mg2Si
2：53Ge47 single crystal using the Vertical Bridgman technique, followed by fabrication of pn-junction diodes through thermal diffusion of Ag. Sample Selection and Data Sources:
High purity Mg, Ge, and Si were used as starting materials.
3：List of Experimental Equipment and Materials:
Pyrolytic graphite crucible, high purity consumables, E-beam evaporator, diamond saw, XRD, Laue, Hall Effect measurement setup.
4：Experimental Procedures and Operational Workflow:
Crystal growth, characterization (XRD, Laue, Hall Effect), diode fabrication, and photoresponse measurement.
5：Data Analysis Methods:
Analysis of XRD patterns, Laue diffraction patterns, Hall Effect measurements, and photoresponse characteristics.
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