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The analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperature
摘要： The main electrical characteristics of current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature of the Re/n-type Si Schottky barrier diodes prepared by pulsed laser deposition (PLD) method have been examined. The values of the basic electrical properties such as forward saturation current (Io), ideality factors (n), barrier heights (Фbo), recti?cation ratio (RR) and series resistances (RS) were obtained from I-V and C-V measurements using di?erent calculation methods. At low voltages (V ≤ 0.3 V), the electrical conduction was formed to take place by thermionic emission, whereas at high voltages (V > 0.3 V), a space charge limited conduction mechanism was shown. Furthermore, the interface state densities (NSS) as a function of energy distribution (ESS- EV) was obtained from the I-V data by taking into account the bias dependence of the e?ective barrier height (Φb) for the Re/n-type Si Schottky barrier diodes.
关键词： interface states,surface potential,recti?cation ratio,Electrical parameters,series resistance
更新于2025-09-23 15:21:01
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Discrete-Pulsed Current Time Method to Estimate Channel Thermal Resistance of GaN-Based Power Devices
摘要： A simple electrical method to extract device channel thermal resistance in transistors is presented here. The method compares the dc to discrete-pulsed characteristics and estimates the effective increase in channel temperature under dc biasing conditions. Using the discrete-pulsed I versus t method, the self-heating of the device is effectively eliminated, which helps avoiding the underestimation of the device channel thermal resistance, therefore, making it possible to perform thermal measurements at the high power operation. This technique was applied to lateral GaN HEMTs with three different substrates as well as vertical GaN current aperture vertical electron transistor (CAVET) on sapphire, which proved its sensitivity and validity for different device structures and geometries.
关键词： high-electron mobility transistors (HEMTs),self-heating,current aperture vertical electron transistor (CAVET),Channel thermal resistance
更新于2025-09-23 15:21:01
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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Research on Thermal Analysis of Iris Recognition Module Package Structure
摘要： The existing iris recognition module is realized by assembly, which has large volume, high power consumption. The iris recognition module does not conform to the light and thin development trend of integrated circuits. Therefore, the industry is considering building a new iris recognition module from the bare chip and micro interconnect technology. The new module integrates a number of bare chips and passive devices in a limited space, and its thermal performance becomes more complex. It performance systematically. In this paper, thermal performance of the iris recognition module is systematically studied by the finite element method, and the influence of the thermal power of the chip, the thermal conductivity of the material and the area of PCB on the temperature and thermal resistance of the package are discussed. The results show that the thermal conductivity of chip material, the thermal power consumption of chip and the area of PCB have significant influence on packaging junction and thermal resistance of package. Package junction temperature and thermal resistance first decrease rapidly with the heat transfer coefficient of the package material, and then gradually tends to be horizontal, The effect of PCB area on the thermal performance of packaging is similar to that of the loading material, and the thermal dissipation power of the package is linearly increasing with the junction temperature of the package, and it has a horizontal linear relationship with the thermal resistance of the package.
关键词： microinterconnection technology,iris identification module,package junction temperature,package thermal resistance
更新于2025-09-23 15:21:01
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Effects of different tailoring graphene electrodes on the rectification and negative differential resistance of molecular devices
摘要： The electronic transport properties of oligo p-phenylenevinylene (OPV) molecule sandwiched with symmetrical or asymmetric tailoring graphene nanoribbons (GNRs) electrodes are investigated by nonequilibrium Green’s function in combination with density functional theory. The results show that different tailored GNRs electrodes can modulate the current–voltage characteristic of molecular devices. The rectifying behavior can be observed with respect to electrodes, and the maximum rectification ratio can reach to 14.2 in the asymmetric AC–ZZ GNRs and ZZ–AC–ZZ GNRs electrodes system. In addition, the obvious negative differential resistance can be observed in the symmetrical AC-ZZ GNRs system.
关键词： negative differential resistance,Graphene nanoribbons electrodes,nonequilibrium Green’s function method,rectifying behavior
更新于2025-09-23 15:21:01
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Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs
摘要： In this letter, we have reported a novel metal scheme Ti/Au/Al/Ni/Au for ohmic contact on AlGaN/GaN high electron mobility transistors (HEMTs). The reported metal scheme is observed to show minimum metal out-diffusion and sharp edge acuity at high temperature annealing, which facilitates aggressive scaling of source drain separation (LSD). We have demonstrated LSD as low as 300 nm with gate length (Lg) of 100 nm for this metal stack. We observed improvement in ON-Resistance (RON) from 3 ?.mm to 1.25 ?.mm, transconductance (gm) from 276 mS/mm to 365 mS/mm, saturation drain current (IDS,sat) from 906 mA/mm to 1230 mA/mm and unity current gain frequency (fT) from 70 GHz to 93 GHz by scaling LSD from 3 μm to 300 nm. The gate length for all devices were 100 nm.
关键词： Edge acuity,HEMT,smooth surface,current gain cut-off frequency,ohmic contact resistance,GaN
更新于2025-09-23 15:21:01
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Effects of Parasitic Region in SiC Bipolar Junction Transistors on Forced Current Gain
摘要： Effects of a parasitic region in SiC BJTs on conductivity modulation and a forced current gain (????) were investigated by using TCAD simulation with various device structures. By introducing an Al+-implanted region below the base parasitic region, ???? can be improved because the implanted region can reduce the base spreading resistance, leading to alleviation of debiasing effect. ???? in devices with various parasitic areas, whose base spreading resistances were reduced by the Al+-implantation, were compared. We found that ???? can be enhanced by expanding the parasitic area if the base spreading resistance is sufficiently reduced. The higher ???? is attributed to an expanded conductivity-modulated region. The collector current spreading in the collector layer and hole injection from the parasitic region as well as from the intrinsic region can play a role to evoke conductivity modulation. Thus, the larger parasitic region can expand the conductivity-modulated region, which results in expansion of an active area and the enhancement of ????, though a higher base voltage is required.
关键词： forced current gain,conductivity modulation,parasitic region,hole injection,SiC BJT,base spreading resistance
更新于2025-09-23 15:21:01
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Strong Quantum Confinement Effects in Nanometer Devices with Graphene Directly Grown on Insulator by Catalyst-free Chemical Vapor Deposition
摘要： Background: The understanding of electrical properties of defective graphene in nanometer regime has lagged behind. Objective: This report intends to characterize defective but practically useful graphene as nanometer devices. Method: A-few-layer-thick graphene was directly grown on SiO2 substrate by alcohol-chemical vapor deposition (alcohol-CVD) using ethanol as carbon source and without the use of any catalytic metal. The graphene film was delineated into nanometer structures by electron beam lithography to make the nanoscale devices. Results: The Raman spectra of the graphene sheet on SiO2 shows relatively large D peak, which means the graphene is defective and consists of nanograins with an estimated size of 17 nm. Modulation of the graphene resistance by the gate voltage Vg was studied at room temperature. The film shows only p-type conduction, with a sheet resistance of 3.7 kΩ/□ and field-effect mobility calculated to be 44 cm2/Vs. From the temperature dependence of the graphene sheet, it is found that the resistance increases only by 7% from room temperature to 10 K, indicating low potential barrier between the domains, even though the graphene film is as thin as 1.6 nm and defective. From the conductance (Id/Vd) contour plot measured at 10 K of these nanodevices, aperiodic Coulomb-blockade feature and transport with a large gap were observed. Conclusion: Correlation among narrowest constriction widths, the variation of the addition energies and transport gaps in disordered graphene nanostructures is evident. These graphene nanodevices may have promising application in various nanodevices like single-electron (or single-hole) transistor, single-molecule transistor, van-der-Waals stacked nanodevices, etc.
关键词： graphene nanometer devices,Graphene nanostructures,sheet resistance,Raman spectra,Coulomb blockade,alcohol chemical vapor deposition,electron beam lithography
更新于2025-09-23 15:21:01
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Study and Calculation Electrical Properties of Silver Thin Layers by Four- Point Probe Method
摘要： In this research Ag thin layers on silicon p-type substrate with crystal orientation (100) and 300, 360 and 400 nm thicknesses by thermal evaporation was deposited. Four-point probe and XRD analysis of surface layers consequently for study electrical properties included of sheet resistance, conductivity, resistivity and investigation of Ag phase formed, was done. As result XRD was shown that at 400 nm the best state of silver face-central cubic (FCC) structure with crystal orientation (200) was formed and by Deby-Scherrer formula distance between successive plates was calculated 8.94 nm. Four-point illustrated that sheet resistance and electrical resistivity with increase thickness, decreases while conductance increases. At 400 nm thickness Ag layer has the most conductivity and the lowest resistance.
关键词： FCC lattice,Thickness,Sheet Resistance,Conductivity
更新于2025-09-23 15:21:01
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Influence of the Subcell Properties on the Fill Factor of Two-Terminal Perovskitea??Silicon Tandem Solar Cells
摘要： The performance of a tandem solar cell depends on the performance of its constituting subcells. Although this dependency is theoretically straightforward for open-circuit voltage (Voc) and short-circuit current, it is indirect for fill factor (FF) and thus for efficiency. We study here with simple simulations the effect on the tandem performance of each subcell FF by varying systematically their series resistance, parallel resistance, and local defect. We demonstrate that series resistance impacts strongly FF for single-junction devices but marginally for tandem devices, the opposite holding for parallel resistances (shunting). We show that localized defects will be most stringent to the tandem device when they occur in the current-limiting subcell. There is thus no obvious correlation between FFs of a tandem device and of its subcells. Finally, we compare two bottom-cell designs and highlight the importance of using a high-Voc bottom cell to reach high tandem efficiencies.
关键词： series resistance,tandem solar cells,parallel resistance,perovskite-silicon,local defects,fill factor
更新于2025-09-23 15:19:57
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Determination of the series resistance of a solar cell through its maximum power point
摘要： A simple analytical approach has been developed to determine the series resistance, Rs, of a solar cell. The method adopted here depends only on the knowledge of the open-circuit voltage, Voc, and the current and voltage at the maximum power point, Isc and Vmp respectively. This approach, based on a knowledge of these operating output parameters of the cell, provides a theoretical framework for an existing computer simulated approach which has been widely used in industries.
关键词： series resistance,short-circuit current,five-parameter model,light generated current,solar cell,shunt resistance
更新于2025-09-23 15:19:57