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- 2018
- gate oxide integrity
- avalanche ruggedness
- SiC MOSFET
- bias temperature instability
- Electronic Science and Technology
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Controlled synthesis of β-SiC with a novel microwave sintering method
摘要： b-SiC was synthesized with coal and sodium silicate as the raw materials via a novel microwave sintering method. The uniform heating and short production cycle makes the microwave sintering process more energy efficient. The structure and property of the prepared samples were characterized using XRD, FT-IR, XPS, TEM and HRTEM techniques. The size of nano-scaled b-SiC range from 70 to 300 nm in diameter and can be achieved 75.7% in the silicon carbide products under the condition of 1600 °C × 60 min with microwave controlling.
关键词： Microwave sintering,Stacking fault,b-SiC
更新于2025-09-16 10:30:52
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[IEEE 2019 AEIT International Annual Conference (AEIT) - Florence, Italy (2019.9.18-2019.9.20)] 2019 AEIT International Annual Conference (AEIT) - Predictive Current Control for a Neutral Point Clamped Inverter Considering SiC-MOSFET as Switches and Using a Photovoltaic Power Source
摘要： This paper proposes a predictive current control of a three-phase 3-level neutral point clamped (3L-NPC) inverter. The main contribution of this paper is the analysis of the effects of the DC LINK voltage on the output of the 3L-NPC on a specific class of power semiconductor, namely SiC-MOSFET. The power source of the DC LINK is a photovoltaic array, the process to choose the number of series panels is a heuristic method. All analyses and results were conducted through simulations, using Matlab/Simulink.
关键词： Neutral point clamped converter,predictive current control,photovoltaic system,SiC-MOSFET
更新于2025-09-16 10:30:52
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A 4H-SiC UV Phototransistor With Excellent Optical Gain Based on Controlled Potential Barrier
摘要： In this article, we report the experimental results of a visible-light-blind 4H-polytype silicon carbide phototransistor able to detect ultraviolet (UV) radiations for wavelengths lower than 380 nm with a significative improvement in the optical gain compared with the state-of-the-art of 4H-SiC UV phototransistors. From the electro-optical measurements, the device shows a dark current of 0.62 pA, an ON-/OFF-current ratio of seven orders of magnitude up to bias voltage of ?0.5 V, and an excellent optical gain of 1.14·105 at 300 nm, whereas it is only 2.6·10?3 at 400 nm demonstrating a good rejection of visible radiations. Besides having high optical gain, the phototransistor is also more sensitive than the conventional 4H-SiC UV detectors for wavelengths with low penetration depths, because its structure is designed to have the electric field up to the radiated surface where the photogenerated electron–hole pairs are efficiently swept up before recombination occurs. The operating principle of the detector is also investigated, and we experimentally proved that differently from the conventional 4H-SiC bipolar junction transistor phototransistor, it is based on the change in the potential barrier height, which controls the current flow, due to the variation in the Fermi levels when the electron–hole pairs are photogenerated. A comparison with the state-of-the-art of 4H-SiC UV phototransistors is reported.
关键词： 4H-SiC semiconductor device,phototransistor,potential barrier,ultraviolet (UV) detector,electro-optical characterization
更新于2025-09-12 10:27:22
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PID Control of a Three Phase Photovoltaic Inverter Tied to a Grid Based on a 120-Degree Bus Clamp PWM
摘要： This paper presents a new operating type of a three phase photovoltaic PID current control system connected to the low voltage distribution grid. This operating type introduces a 120-degree bus clamp PWM control method (120° BC-PWM). A 120° BC-PWM is a special switching sequences technique employing bus clamp sequences that use only one phase under a PWM and PID control state every 60° while the other phases are being clamped. The BC-PWM method was used to generate six PWM signals to control a three phase inverter system every 60° with constant power input and a small dc link film capacitor. The main objective of this paper is to use new PWM techniques with a PID current control method to reduce the switching losses of three phase inverters. The losses were reduced to 1/3th for each transistor by reducing the time operation for each transistor. The simulation results of the BC-PWM method show an improvement in the performance of the three phase inverter system connected to the grid. Simulation setup of the system obtained is built by using a SiC MOSFET, 5 kVA, 400 V line-line and 25 kHz switching frequency. The PID control is not continuously active for each phase but is operational in 60° and saturated at 120° in a half period. Following a proper tuning of the windup, it recovers very easily.
关键词： SIC MOSFET,current control,PWM,120-degree bus clamp,PID,three phase inverter
更新于2025-09-12 10:27:22
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On the study of microstructure of annealed C+and H2+ Co_implanted 6H-SiC
摘要： The microstructure of annealed single crystal 6H-SiC implanted with C+ and H2+ ions were characterized by glancing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). After annealing, cracks were observed to form in the surface of C+ ions implanted sample. However, blisters as circular clusters were observed in the surface of the H2+ ions implanted and annealed sample. Compared with the samples implanted with only single type of ions, both cracks and blisters with different morphologies were found to appear in the surface of C+ and H2+ ions co-implanted sample. The morphology and distribution of blisters and exfoliations in the C+ and H2+ co-implanted samples were more irregular and inhomogeneous than those in the H2+ ions implanted sample, which can be attributed to the randomly distributed columnar crystals formed during the annealing process. The grain boundaries of these columnar crystals could be used as migration channels for hydrogen, which influence the size evolution of blisters and exfoliations in the sample surface during annealing process.
关键词： Microstructure,SiC,Annealing,Surface morphology,Ion irradiation
更新于2025-09-12 10:27:22
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[IEEE 2019 IEEE Energy Conversion Congress and Exposition (ECCE) - Baltimore, MD, USA (2019.9.29-2019.10.3)] 2019 IEEE Energy Conversion Congress and Exposition (ECCE) - Implementation of Flexible Large Power Transformers Using Modular Solid State Transformer Topologies Enabled by SiC Devices
摘要： Large power transformers (LPTs) have been a major concern of the electric power sector as a failure of a single unit can lead to temporary service interruption and utility damages. Replacement of such large and heavy transformer units is a challenging job as LPTs are custom-designed and hence entail long lead times due to its intricate manufacturing process and transportation. On the other hand, solid-state-transformer (SST) technology has evolved as an alternate option for the conventional line-frequency transformers, which offers comparatively reduced size and weight with the enhanced power quality features. With the advancement in wide-bandgap devices such as silicon carbide (SiC) and advanced power electronic converters, SSTs are able to deploy in medium voltage applications. Consequently, the utilization of SiC-SSTs for large power applications can mitigate some of the existing concerns of LPTs. In this paper, challenges and concerns associated with the existing LPTs are discussed. Possible SST modules/cells enabled by SiC devices, which can be connected in a modular structure to achieve multi-cell flexible large power SSTs (FLP-SST) are presented. The effectiveness of the discussed SST cells is validated using appropriate simulations and experimental results of the scaled SST prototypes.
关键词： solid-state transformers (SSTs),modular converters,Large power transformers,SiC Devices
更新于2025-09-12 10:27:22
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Surface Micro patterning of Aluminium Reinforced Composite for Aerospace Applications through High Energy Pulse Laser Peening
摘要： Aluminium (Al) Composites have universal engineering applications because of their higher strength to weight ratio, ductility, and formability. However, in diverse applications, mechanical properties such as hardness, corrosion, wear, and fatigue resistance are the prerequisite at closer surface regions. Such localised changes without impacting various surface treatment approaches can attempt the bulk phase. Laser shock peening is an advanced surface engineering technique, which has been successfully applied to improve the surface morphology and microstructure of the material. In this work, we are focusing on improving the surface properties of Al7075 reinforced with SiC and Zirconia through laser peening technique. The hardened layer was evaluated using surface integrity with optical microscopy, energy dispersive spectroscopy, scanning electron microscope (SEM) and analysis of microhardness. Process parameters and resulting microstructures of Aluminium composite are summarised, along with the impact of laser peening on surface properties. Research results indicated that laser peening shows a significant influence on the final condition of the surface layer of Aluminium composite.
关键词： Zirconia,Aluminium Metal Matrix Composites,SiC,SEM,Laser peening
更新于2025-09-12 10:27:22
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Microscale pattern etch of 4H–SiC by inductively coupled plasma
摘要： SiC is commonly used in the field of high temperature, high frequency, high power and radiation-resistant semiconductor devices and ultraviolet photodetectors due to its excellent photoelectric characteristics. Plasma etching is one of the key processes in the fabrication of SiC devices. However, it is difficult to obtain a smooth and vertical etch profile due to the subtrench effect when the conventional inductively coupled plasma (ICP) is used to etch SiC with small-size patterns (such as 1 μm holes or trenches), thus affecting the subsequent process and device performance. To study microscale pattern etch of 4H–SiC, we used different mask and etch gas systems for ICP etching. The etch profile was characterized using SEM. When the chlorine gas was used, there was no subtrench but a very inclined angle between the SiC bottom and sidewalls, which is hard to improve. When we used photoresist (PR) mask–HBr system, sidewall deposition happened. SiO2 mask–HBr/Ar system could help to etch different angles but has a limitation angle of up to 80°. Compared to above systems, the etching profile was much more vertical when HBr/SF6/O2 was used. After many rounds of process debugging, we obtain a good etching profile with flat and vertical sidewalls, no subtrench in the bottom and no damage of the SiO2 mask. Our work shows a good way of microscale pattern SiC etching by ICP.
关键词： SiC,microscale pattern,etch profile,ICP etching,subtrench effect
更新于2025-09-12 10:27:22
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The Effects of Laser Parameters and the Ablation Mechanism in Laser Ablation of C/SiC Composite
摘要： The e?ects of laser parameters and the ablation mechanism in laser ablation of a carbon ?ber reinforced silicon carbide (C/SiC) composite are investigated in the present study. Six di?erent power densities are provided, as well as six levels of pulse numbers, and then ablation experiments are conducted for the C/SiC composite, induced by a pulsed laser. Based on the experimental results, the characteristics of surface morphology and ablation behavior are discussed. It is revealed that the surface morphology of the C/SiC composite under laser irradiation usually includes three regions: the center region, the transition region, and the border region. With the increase of laser power density, the ablation of the center region becomes severe, surface cracks occur, and more spherical SiC particles are found in the transition region. As for scenarios involving multiple pulses, the damage occurs in the center region at low power density limits, within the ?rst two layers below the surface. However, if the power density is relatively high, an ablation pit occurs in the center region when the pulse number is larger than 50. Meanwhile, the transition region and the border region diminish with increase of the pulse number. It is noted that both the power density and pulse number have noticeable e?ects on surface morphology and ablation behavior during laser ablation, which is helpful for material design and performance evaluation of C/SiC composites.
关键词： Surface morphology,C/SiC composite,Ablation mechanism,Laser ablation,Scanning electron microscopy (SEM)
更新于2025-09-12 10:27:22
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High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication
摘要： We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10?4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.
关键词： excimer laser doping,4H-SiC,Al thin film,pn junction diode
更新于2025-09-12 10:27:22