- 标题
- 摘要
- 关键词
- 实验方案
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Current linearity and operation stability in Al <sub/>2</sub> O <sub/>3</sub> -gate AlGaN/GaN MOS high electron mobility transistors
摘要： To investigate current linearity and operation stability of metal–oxide–semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 °C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of ID–VG curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance–voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMT showed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures.
关键词： current linearity,interface states,MOS-HEMT,AlGaN/GaN,operation stability,bias annealing
更新于2025-09-23 15:23:52
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Finite bias evolution of bosonic insulating phase and zero bias conductance in boron-doped diamond: A charge-Kondo effect
摘要： We report novel transport features in heavily boron-doped nanocrystalline diamond films, in particular an anomalous resistance peak near to the superconducting transition temperature and a strong zero bias conductance peak in the differential current-voltage spectra. The shape of the resistance-temperature curves near the critical temperature is seen to be strongly influenced by both magnetic field and bias current. As the bias current is lowered, the resistance peak becomes more pronounced, whereas when the magnetic field is varied the peak shifts towards lower temperatures. The resistance upturn shows a quadratic temperature dependence as expected for a Kondo transition. We find that a number of transport features such as resistance peak height, zero bias conduction peak height and width scale according to a power law dependence. We interpret these features as a result of a charge-Kondo effect where hole dopants act as degenerate Kondo impurities by opening additional pseudo-spin scattering channels.
关键词： bosonic insulating phase,zero bias conductance peak,charge-Kondo effect,boron-doped diamond,superconductivity
更新于2025-09-23 15:23:52
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Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$HfO2 interfacial layer formed by atomic layer deposition
摘要： X-ray photoelectron spectroscopy has been carried out to characterize the surface of the hafnia (HfO2) thin films grown on n-GaAs wafer by atomic layer deposition, and the surface morphology of the HfO2 layer on GaAs has been analysed using atomic force microscopy. The barrier height (BH) values of 1.03 and 0.93 eV (300 K) for the Au/Ti/HfO2/n-GaAs structures with 3- and 5-nm HfO2 interfacial layers, respectively, have been obtained from the I–V characteristics of the devices, which are higher than the value of 0.77 eV (300 K) for the Au/Ti/n-GaAs diode fabricated by us. Therefore, it can be said that the HfO2 thin layer at the metal/GaAs interface can also be used for BH modification as a gate insulator in GaAs metal-oxide semiconductor (MOS) capacitors and MOS field-effect transistors. The ideality factor values have been calculated as 1.028 and 2.72 eV at 400 and 60 K; and as 1.04 and 2.58 eV at 400 and 60 K for the metal–insulating layer–semiconductor (MIS) devices with 3- and 5-nm interfacial layers, respectively. The bias-dependent BH values have been calculated for the devices by both Norde’s method and Gaussian distribution (GD) of BHs at each sample temperature. At 320 K, the (cid:2)b(V ) value at 0.70 V for a 3-nm MIS diode is about 1.08 eV from the (cid:2)b(V ) vs. V curve determined by the GD, and about 0.99 eV at 0.58 V for a 5-nm MIS diode. It has been seen that these bias-dependent BH values are in close agreement with those obtained by Norde’s method for the same bias voltage values.
关键词： metal–insulating layer–semiconductor (MIS) device,Barrier height modification and inhomogeneous,bias-dependent barrier height,temperature-dependent MIS diode parameters,atomic layer deposition (ALD)
更新于2025-09-23 15:23:52
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Contactless parametric characterization of bandgap engineering in p-type FinFETs using spectral photon emission
摘要： In the last decade it has become increasingly popular to use germanium enriched silicon in modern field effect transistors (FET) due to the higher intrinsic mobility of both holes and electrons in SiGe as compared to Si. Whether used in the source/drain region (S/D) as compressive stressor, which is an efficient mobility booster on Si channel devices, or as channel material, the SiGe increases channel carrier mobility and thus enhancing device performance. Because the germanium content modifies the effective bandgap energy EG, this material characteristic is an important technology performance parameter. The bandgap energy can be determined in an LED-like operation of electronic devices, requiring forward biased p-n junctions. P-n junctions in FETs are source or drain to body diodes, usually grounded or reversely biased. This investigation applies a bias to the body that can trigger parasitic forward operation of the source/drain to body p-n junction in any FET. Spectral photon emission (SPE) is used here as a non-destructive method to characterize engineered bandgaps in operative transistor devices, while the device remains fully functional. Before applying the presented technique to a p-type FinFET device, it is put to the proof by verifying the nominal silicon bandgap on an (unstrained) 120 nm technology FET. Subsequently the characterization capability for bandgap engineering is then successfully demonstrated on a SiGe:C heterojunction bipolar transistor (HBT). In a final step, the bandgap energy EG of a 14/16 nm p-type FinFET was determined to be 0.84 eV, which corresponds to a Si0.7Ge0.3 mixture. The presented characterization technique is a contactless fault isolation method that allows for quantitative local investigation of engineered bandgaps in p-type FinFETs.
关键词： p-n junction,Heterojunction bipolar transistor,Bandgap characterization,p-channel FinFET,SiGe, strained Si,Body diode, parasitic operation,Bandgap engineering,Body bias voltage,HBT,Contactless fault isolation,Spectral photon emission,MOSFET
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore (2018.7.16-2018.7.19)] 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Elimination of the Hump Current of P-Channel Polycrystalline Silicon Thin-Film Transistor After Positive Bias Stress
摘要： The stability of p-channel low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) under positive bias stress (PBS) is investigated in this paper. Interestingly, it is observed that the transfer curves show different degradation phenomena from the previous reports, i.e., the threshold voltage (Vth) shifts to the negative gate bias direction, and the hump current in the subthreshold region clearly shrinks with the increase of the stress time, and finally disappears under the PBS, which is explained by the creation and accumulation of positive charges in the gate oxide. It is also observed that the hump current in p-channel TFTs is eliminated at a higher temperature and one possible mechanism for the appearance of hump current is proposed.
关键词： thin-film transistors,positive bias stress (PBS),hump current,p-channel
更新于2025-09-23 15:23:52
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[IEEE 2018 15th Conference on Computer and Robot Vision (CRV) - Toronto, ON, Canada (2018.5.8-2018.5.10)] 2018 15th Conference on Computer and Robot Vision (CRV) - Learning a Bias Correction for Lidar-Only Motion Estimation
摘要： This paper presents a novel technique to correct for bias in a classical estimator using a learning approach. We apply a learned bias correction to a lidar-only motion estimation pipeline. Our technique trains a Gaussian process (GP) regression model using data with ground truth. The inputs to the model are high-level features derived from the geometry of the point-clouds, and the outputs are the predicted biases between poses computed by the estimator and the ground truth. The predicted biases are applied as a correction to the poses computed by the estimator. Our technique is evaluated on over 50 km of lidar data, which includes the KITTI odometry benchmark and lidar datasets collected around the University of Toronto campus. After applying the learned bias correction, we obtained significant improvements to lidar odometry in all datasets tested. We achieved around 10% reduction in errors on all datasets from an already accurate lidar odometry algorithm, at the expense of only less than 1% increase in computational cost at run-time.
关键词： Lidar Odometry,Gaussian Process,Motion Estimation,Bias Correction
更新于2025-09-23 15:23:52
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Reverse bias-dependence of schottky barrier height on silicon carbide: influence of the temperature and donor concentration
摘要： The work deals with the dependences of the Schottky barrier height (SBH) on the reverse bias voltage, temperature and on donor concentration of metal/4H-SiC Schottky diodes. Using the tunneling modeling we have shown that the Schottky barrier height on silicon carbide strongly depends on the reverse bias voltage, temperature and doping concentration. At room temperature, the Schottky barrier height increases with increasing the reverse bias voltage at high doping concentration (about 1016 cm-3), while, at low doping concentration (about 1015 cm-3) the Schottky barrier height decreases with increasing the reverse bias voltage. These behaviors are independent of the Schottky barrier lowering effect. That means other effects occur at the barrier and depend on the reverse applied bias. The barrier height increases with increasing temperature and doping concentration under reverse bias conditions. The barrier heights extracted from the Padovani-Stratton formulas are close to the barrier heights extracted from the Tsu-Esaki formula in particular for the thermionic-field emission.
关键词： Reverse Bias,Silicon Carbide,Extraction,Tunneling,Schottky Barrier Height
更新于2025-09-23 15:22:29
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Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors
摘要： In this paper, we have investigated the effects of yttrium (Y) doping on the electrical performance and stability of ZnO thin film transistors (TFTs). Here, Y-doped ZnO TFTs were fabricated by using radio frequency magnetron sputtering at 150 °C. As a result, the 1% Y-doped ZnO TFT exhibits a small threshold voltage shifts of 2.5 V under positive bias stress and ?2.8 V under negative bias stress as well as desirable device performance with field effect mobility of 9.8 cm2/V s, a subthreshold swing of 320 mV/decade and on/off current ratio of 107, respectively. Based on the XPS analysis and electrical characterizations, the improvement in stability and electrical properties of ZnO TFTs were attributed to the appropriate Y doping concentration, which not only could control the carrier concentration and broaden the band gap of ZnO film, but also suppress the oxygen vacancy defects and passivate the trap density at the SiO2/ZnO interfaces. Consequently, the high stability and excellent electrical performances of Y-doped ZnO TFTs show great potential for use in flat panel displays.
关键词： Doping,Zinc oxide (ZnO),Thin film transistors (TFTs),Bias stress stability
更新于2025-09-23 15:22:29
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[IEEE 2018 International Semiconductor Conference (CAS) - Sinaia (2018.10.10-2018.10.12)] 2018 International Semiconductor Conference (CAS) - Duty Cycle Adjustment for the Low Cost High Frequency Charge/Discharge CMOS Oscillator
摘要： A new technique for adjusting the duty cycle in low cost 70MHz charge/discharge based oscillator topology is proposed. Added circuitry is optimized in order to maintain the frequency variation of the initial oscillator topology (without duty cycle adjustment) for a supply voltage range between 1.6V and 2V. The circuit uses different bias currents for each stage and it is implemented using Cadence design suite. It features reduces sensitivity to supply voltage range of the output frequency and low duty cycle variation.
关键词： low voltage,duty cycle,charge/discharge oscillator,bias
更新于2025-09-23 15:22:29
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Effect of temperature and bias voltage on electrical and electrochemical properties of diamond-like carbon films deposited with HiPIMS
摘要： The relatively high electrical resistivity of diamond-like carbon (DLC) film is one of the main drawbacks when applied in electronic device. In this study, DLC films were synthesized on 304 stainless steels by high power impulse magnetron sputtering (HiPIMS) process and the effect of deposition temperature and bias voltage on the microstructure, electrical and electrochemical properties, hardness and adhesion strength of the DLC films were investigated. The sp2/sp3 ratio of DLC films first decreased then increased and the surface became denser as bias voltage increasing from 0 to -400 V. While the film turned into graphite-like structure and became incompact when deposition temperature rose from 100 °C to 300 °C. The interfacial contact resistance (ICR) got reduced by increasing bias voltage and deposition temperature. However, as the deposition temperature increased to 300 °C the anticorrosion ability and hardness of DLC films deteriorated. The DLC films deposited at 300 °C presented soft and had better adhesion strength than hard DLC films deposited at 100 °C. DLC films deposited at -400 V bias and 300 °C had the lowest ICR while DLC films deposited at -400 V bias and 100 °C had the best performance when ICR, corrosion resistance and hardness were all taken into consideration.
关键词： Electrochemical corrosion,Substrate temperature,High power impulse magnetron sputtering,Interfacial conductivity,Diamond-like carbon,Bias voltages
更新于2025-09-23 15:22:29