研究目的
To study the dependences of the Schottky barrier height on the reverse bias voltage, temperature, and donor concentration in metal/4H-SiC Schottky diodes using tunneling modeling.
研究成果
The Schottky barrier height on silicon carbide exhibits significant dependencies on reverse bias voltage, temperature, and doping concentration, with behaviors contradicting image force theory. This indicates the presence of other effects, such as interfacial layers and interface states. The Padovani-Stratton model provides results close to the Tsu-Esaki model, especially for thermionic-field emission. Future work should explore these interfacial effects in more detail.
研究不足
The study relies on data from various sources, which may introduce inconsistencies. The tunneling models used (e.g., Padovani-Stratton) do not account for image force effects and assume simple barrier shapes, potentially limiting accuracy. Numerical methods may have precision issues, and the assumption of tunneling dominance might not hold under all conditions.
1：Experimental Design and Method Selection:
The study uses tunneling modeling, specifically the Tsu-Esaki and Padovani-Stratton formulas, to extract Schottky barrier height from reverse I-V characteristics. It assumes tunneling is the dominant mechanism and uses the WKB approximation for analytical solutions. A criterion (S) based on the sum of squares of relative differences is used for fitting.
2：Sample Selection and Data Sources:
Data from previously published works on various metal/4H-SiC Schottky diodes are used, with doping concentrations ranging from 9x10^14 cm^-3 to 1.6x10^16 cm^-3 and temperatures from room temperature up to 573 K. References include works by Furno, Schoen, Vassilevski, Itoh, Saxena, Nigam, Ohtsuka, and Ivanov.
3：6x10^16 cm^-3 and temperatures from room temperature up to 573 K. References include works by Furno, Schoen, Vassilevski, Itoh, Saxena, Nigam, Ohtsuka, and Ivanov.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Not explicitly detailed in the paper; relies on data from literature without specifying equipment used in original experiments.
4：Experimental Procedures and Operational Workflow:
Numerical methods, such as Newton's method, are applied to solve equations for barrier height extraction. The process involves fitting experimental I-V data to theoretical models to determine barrier height and effective mass.
5：Data Analysis Methods:
Statistical fitting using the criterion S to minimize differences between measured and ideal current values. Analysis includes comparing results from different tunneling models and examining dependencies on bias, temperature, and doping.
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