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Temperature-dependent dielectric response of (1-x)PVDF/(x)BaTiO3 nanocomposite films
摘要： The PVDF/BaTiO3 nanocomposite films were prepared by solution casting method by using dimethylformamide as solvent. The dielectric constant and loss tangent of the PVDF and PVDF/BaTiO3 composites have been determined as functions of frequency (20 Hz to 2 MHz) and temperature (80 to 425 K). A significant enhancement in dielectric constant ε' is observed in composite samples. Tangent loss factor (tan δ) is maximum at lower frequencies due to interfacial polarization. In composite samples owing to the synthesis process, there is a phase transition in PVDF from α to β which results in the formation of dipolar relaxation. The dipolar nature of both the PVDF and PVDF/BaTiO3 nanocomposites is arrested below 200 K. The activation energy values (0.43- 0.69 eV) associated with tan δ peak in the region 200 – 270 K are in agreement with the activation energy associated with a dipolar relaxation process. The relaxation time (τ) decreases with increasing BaTiO3 filler content while the number density of dipoles increases from 4.06×1021 cm-3 for pristine PVDF to 6.62×1023 cm-3 for (0.5)PVDF/(0.5)BaTiO3 composite and confirms a significant amount of dipolar relaxation in PVDF/BaTiO3 composites.
关键词： dielectric relaxation,activation energy,dielectric constant,PVDF/BaTiO3 nanocomposites
更新于2025-11-14 17:28:48
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Study on Charge transportation and scaling behavior of CsPbI3 microwires
摘要： Cesium lead iodide (CsPbI3) has been prepared by a new experimental hazard free precipitation technique. X-ray diffraction spectra have been interpreted with Rietveld refinement which assures the orthorhombic phase of CsPbI3. Energy dispersive X-ray fluorescence spectra confirms the formation of ternary compound. Orthorhombic to cubic phase transition has been studied by observing hysteresis loop in R(T)-T plot for forward-reverse temperature scan. The intra-grain and inter-grain contribution of CsPbI3 to dielectric relaxation has been accounted by fitting the complex impedance plot (Cole-Cole plot). The value of FWHM in Z″(ω)-lnf or M″(ω)-lnf plot is greater than 1.141 decades which reveals the non-Debye type relaxation within material. The broad relaxation peak signifies that there is a distribution of relaxation time over a mean value. Moreover, Z″ & M″ have been plotted in scaled coordinate to check whether the distribution of relaxation time is temperature dependent or not. The frequency dependent relative permittivity represents the decreases of polarizations with frequency which have been successfully analyzed by Koop’s theory. Here, activation energies are equal for different formalism, suggests that the same type charge carriers involved in conduction as well as relaxation process. Ac conductivity has been interpreted by using Jonncher’s power law and frequency exponent (n) increases with temperature which suggests the presence small polaron hopping mechanism.
关键词： Joncher’s power law,dielectric relaxation,Rietveld,Hysteresis,Cole-Cole plot,CsPbI3 micro-wire
更新于2025-09-23 15:23:52
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Variable-range-hopping conduction and polaron dielectric relaxation in Cu and Nb co-doped BaTiO3
摘要： BaTi0.7(Cu0.1Nb0.2)O3 ceramic was prepared using a solid-state method and its structure, valence states, conduction mechanism and dielectric properties were investigated in detail. A fine-grained microstructure and a distorted pseudo-cubic perovskite structure were confirmed by scanning electron microscopy, X-ray diffraction analysis and Raman spectroscopy. X-ray photoelectron spectroscopy analysis suggested that Cu in BaTi0.7(Cu0.1Nb0.2)O3 was polyvalent but the valence states of Ti and Nb were invariable. Mott’s variable-range-hopping (VRH) conduction was observed. The two colossal dielectric constant plateaus in low- and high-temperature ranges were ascribed to the electrode and grain boundary responses, respectively. The VRH model described the low-temperature relaxation well, indicating that the dielectric relaxation was a polaron relaxation rather than Maxwell–Wagner type. Both grain and grain boundary resistances were well fitted by the VRH model, suggesting that the VRH mechanism was tenable in both grain and grain boundaries. The electron paramagnetic resonance signal was ascribed to Cu ions, and the linewidth showed a linear relationship with T?1/4, corresponding to the charge transfer between different valence via Cu+-O-Cu2+ and Cu2+-O-Cu3+ paths. The hopping of carriers was also responsible for the conduction and polaron dielectric relaxations.
关键词： Variable-range-hopping conduction,Electron paramagnetic resonance.,Dielectric relaxation,Cu and Nb co-doped BaTiO3
更新于2025-09-23 15:23:52
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Peculiarities of the dielectric properties of ternary 0.5(Y0.1Zr0.9O2) – 0.5(0.6SrTiO3 – 0.4BiScO3) ceramic system
摘要： Ceramic samples of ternary 0.5(Y0.1Zr0.9O2) – 0.5(0.6SrTiO3 – 0.4BiScO3) system consisting of individual Y0.1Zr0.9O2 and 0.6SrTiO3 – 0.4BiScO3 subsystems were synthesized via solid-state processing techniques. By XRD analysis, a coexistence of tetragonal P42/nmc phase related to the Y0.1Zr0.9O2 subsystem, and cubic Pm m3? and tetragonal P4mm phases associated with the 0.6SrTiO3 – 0.4BiScO3 subsystem was found. A deviation of real composition from nominal one for both Y0.1Zr0.9O2 and SrTiO3 – BiScO3 subsystems due to Sc substituting for Zr in the Y0.1Zr0.9O2 subsystem and, vice versa, Zr substituting for Sc in the SrTiO3 – BiScO3 subsystem was also observed. Peculiarities of the dielectric properties related to both di?use ferroelectric phase transition and dielectric relaxation processes were found and analyzed in comparison with the dielectric properties of two-component 0.6SrTiO3 – 0.4BiScO3 system. It was found that the di?use phase transition in ternary system, ?rstly, shifts to lower temperatures and, secondly, has a less degree of di?useness as compared to two-component system. Such kind of behavior could be attributed to a di?erence of ionic radii of ions Zr4+ and Sc3+. Dielectric relaxation processes associated with the O2- ions migration were observed within temperature 500–800 K for both ternary and two-component systems. Two dielectric relaxation processes related to the Y0.1Zr0.9O2 and 0.6SrTiO3 – 0.4BiScO3 subsystems were found in ternary system, whereas one dielectric relaxation process was observed in two-component system. The activation energies for the dielectric relaxation processes were estimated as ~ 1.3 eV and ~ 0.9 eV for Y0.1Zr0.9O2 and 0.6SrTiO3 – 0.4BiScO3 subsystems, respectively, for ternary system, and ~ 0.75 eV for two-component system.
关键词： Dielectric relaxation process,Two-component ceramic system,Y0.1Zr0.9O2 and 0.6SrTiO3 – 0.4BiScO3 subsystems,Ternary ceramic system,Di?use phase transition
更新于2025-09-23 15:22:29
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Low Frequency Dielectric Relaxation and Charge Transport in Bi<sub>12</sub>TiO<sub>20 </sub>Photorefractive Sillenite Crystals
摘要： Features of processes of a dielectric relaxation and charge transport in photorefractive sillenite crystals Bi12TiO20 at low frequency range are investigated. It was found that the dispersion of dielectric permittivity ε' in crystals Bi12TiO20 is characterized by its growth with lowering frequency and rising temperature. This behaviour may be related to existence of dipole-relaxation polarization mechanism. The frequency dependence of dielectric loss tgδ reveals the existence of low frequency relaxation peaks in the studied temperature range. From the conductivity dependence on the frequency and temperature it was found that conductivity σ increases as frequency increases in the low frequency range. The observed dependence σ(ω)≈Аωs indicates that transport mechanism is due to hopping of carriers via localized electron states. The charge transport is thermally activated process in which activation energy Ea = (0.82±0.03) eV.
关键词： Charge transport,Photorefractive Sillenite crystals,Dielectric relaxation
更新于2025-09-23 15:21:21
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Electrical transport properties and complex impedance investigation of Fe3+ and La3+ co-doping (Pb,Sr)TiO3 thin films
摘要： This work investigates the impact of Fe3+ and La3+ co-doping on the structural, electrical transport and dielectric relaxation properties of PST thin films. XRD and Raman spectroscopy data show that the Fe3+ and La3+ doping induce a pseudocubic to tetragonal structural phase transformation. Schottky barrier heights calculated from temperature-dependent current–voltage plots for the PST, PSTF and PSLTF films decreased to 1.20, 0.59, and 0.36 eV, respectively. This behavior was directly assigned to the increase in oxygen vacancies. The frequency dependence of sample’s impedance revealed the presence of the typical electrical relaxation phenomenon in all films. Activation energies calculated from the imaginary part of the impedance are 1.73 and 0.57 eV: the high value (1.73 eV, PST films) suggests the presence of long-range oxygen vacancy diffusion, while the lower one (0.57 eV PSLTF films) should be associated to the short-range oxygen vacancy diffusion.
关键词： Dielectric relaxation,Thin films,Electrical transport,Impedance spectroscopy
更新于2025-09-23 15:21:01
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Dielectric relaxation and resistive switching of Bi0.96Sr0.04Fe0.98Co0.02O3/CoFe2O4 thin films with different thicknesses of the Bi0.96Sr0.04Fe0.98Co0.02O3 layer
摘要： Bi0.96Sr0.04Fe0.98Co0.02O3/CoFe2O4(BSFCO/CFO) bilayered thin films with different thicknesses of the BSFCO layer are synthesized on FTO/glass substrates by chemical solution deposition method (CSD). The influence of BSFCO thickness on the microstructure, dielectric relaxation, ferroelectric properties and resistive switching (RS) of the thin films are researched. Strain exists in the prepared thin films and gives rise to structural distortion, which has an effect on charged defects and ferroelectric polarization. Dielectric relaxation that is closely related to the interfacial polarization at the BSFCO/CFO interface is observed, and the dielectric loss peaks along with decreasing intensity shift to high frequency with decreasing strain. The Maxwell-Wagner two-layer model is adopted to investigate the mechanism of dielectric relaxation, and the relaxation time τ is calculated and it shown to be directly proportional to the strain. It is found that the dielectric properties, including low dielectric loss, can be improved by controlling the BSFCO layer thickness. The ferroelectric properties improve with the decreasing strain, the 12-BSFCO/CFO thin film possesses a large Pr~102.9 μC/cm2 at 660 kV/cm. The observed resistive switching (RS) behavior is attributed to the interfacial conduction mechanism, it is found that strain-dependent the ferroelectric polarization switching modulates the width of depletion layer and the height of potential barrier at the interface, resulting in the different resistance states.
关键词： dielectric relaxation,bilayered thin film,BiFeO3,resistive switching,strain
更新于2025-09-23 15:21:01
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AIP Conference Proceedings [AIP Publishing PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019 - Kerala, India (12–14 June 2019)] PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019 - Insulator to semiconductor transition in graphene quantum dots
摘要： Zero dimensional graphene quantum dots (GQDs) exhibit interesting physical and chemical properties due to the edge effect and quantum confinement. As the number of carbon atoms in edge is more than on basal plane, GQDs are more reactive. Room temperature XRD pattern confirms the formation of the GQDs. UV-Visible spectra confirm that GQDs show optical absorption in the visible region. The emission peaks in the photoluminescence spectra are red shifted with the increase of excitation wavelength. Dynamic light scattering (DLS) analysis shows that the average size of the particles is found to be ~65 nm. The frequency dependent electrical transport properties of the GQDs are investigated in a temperature range from 300 to 500 K. Most interestingly, for the first time, the insulator to semiconductor transition of GQD is observed near 400K. The transition mechanism of GQD is discussed with detailed dielectric analysis. The effects of intercalated water on temperature dependent conductivity are clearly discussed. The dielectric relaxation mechanism is explained in the framework of permittivity, conductivity and impedance formalisms. The frequency dependent ac conductivity spectra follows the Jonscher's universal power law. Cole-Cole model is used to investigate the dielectric relaxation mechanism in the sample.
关键词： Graphene Quantum Dots,Insulator to Semiconductor Transition,Dynamic Light Scattering,Dielectric Relaxation,Photoluminescence
更新于2025-09-11 14:15:04
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Study of dielectric relaxation and thermally activated a.c. conduction in multicomponent Ge10-xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses using CBH model
摘要： Amorphous Ge10-xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses were prepared by melt quench technique. Surface morphology with the chemical composition of the prepared glass was examined using SEM and EDS analysis respectively. Dielectric properties and a.c. conductivity of the multicomponent Ge10-xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses have been examined in the frequency range 100Hz to 1MHz and temperature range 303 to 328K. It was noticed that dielectric constant and dielectric loss decreases with the increase of frequency and increases with the increase of temperatures. Frequency and temperature dependence of dielectric constant was explained by orientational polarization. The variation of dielectric loss with frequency and temperature was explained by conduction loss and theory of single polaron hopping of charge carriers suggested by Elliot and Shimakawa for chalcogenide glasses. The experimental results show that a.c. conductivity follows the power law where s<1 and value of s decreases with the increase of temperature. The present findings of a.c. conductivity and variation of s with temperatures are reasonably well interpreted in terms of CBH model.
关键词： a c conductivity,dielectric relaxation,Chalcogenide glasses,CBH model,activation energy.
更新于2025-09-10 09:29:36
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Phenomenological approach on electromagnetic waves propagation in normal and diabetic blood, influence of the relative macromolecular structures
摘要： This paper completes the thermodynamic characterization of normal and diabetic blood by the study of the propagation of electromagnetic waves. After a brief introduction on the thermodynamic approach in a biological system, the procedure used is briefly described. The problem of the propagation of electromagnetic waves is faced by deducing an expression of the propagation speed and attenuation of the wave as a function of the frequency. Comparison of results between normal and diabetic blood shows a greater number of permanent dipoles in diabetic blood than in the normal one. Diabetic blood tends to the insolubility because of conformational changes of blood proteins which cannot effectively respond to the stress of the electric field.
关键词： Non-equilibrium thermodynamics,Dielectric relaxation in blood,Blood
更新于2025-09-09 09:28:46