研究目的
This work investigates the impact of Fe3+ and La3+ co-doping on the structural, electrical transport and dielectric relaxation properties of PST thin films.
研究成果
The study concludes that Fe3+ and La3+ co-doping induces a phase transition from tetragonal to pseudocubic in PST thin films, reduces Schottky barrier heights, and affects the electrical relaxation behavior through changes in oxygen vacancy concentrations. The activation energy values suggest that oxygen vacancies are the mobile ionic defect species responsible for the conduction process.
研究不足
The study focuses on the impact of Fe3+ and La3+ co-doping on PST thin films, with limitations including the specific doping concentrations used and the focus on electrical transport and dielectric relaxation properties. The study does not explore other doping concentrations or the effects of other dopants.
1：Experimental Design and Method Selection:
The study involved the preparation of Pb
2：70Sr30TiO3 (PST), Pb70Sr30Ti1?xFexO3 (x = 50) (PSTF) and Pb70Sr30-xLaxTi1?yFeyO3 (x = 10 and y = 50) (PSLTF) thin films by chemical solution deposition on Pt/Ti/SiO2/Si substrate. The precursor solution was prepared using the polymeric precursor route. Sample Selection and Data Sources:
The films were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectroscopy, and X-ray photoemission spectroscopy (XPS). Electrical properties were measured using circular Au electrodes.
3：List of Experimental Equipment and Materials:
Equipment included a Rigaku MiniFlex600 X-ray diffractometer, Bruker Dimension ICON AFM, LabRAM HR Evolution micro-Raman spectrometer, Agilent 4294A Precision Impedance Analyzer, Keithley 237 source measure unit, and Scienta Omicron ESCA + spectrometer system.
4：Experimental Procedures and Operational Workflow:
The films were deposited by spin coating, preheated to remove residual water, and annealed. Electrical properties were measured with temperature-dependent I-V characteristics and complex impedance analysis.
5：Data Analysis Methods:
Data analysis involved fitting experimental data to models for Schottky emission and Arrhenius relationship for activation energy calculation.
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Bruker Dimension ICON
Dimension ICON
Bruker
Used for atomic force microscopy to characterize surface microstructures and morphology.
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Agilent 4294A Precision Impedance Analyzer
4294A
Agilent
Used for dielectric properties and complex impedance analysis of thin films.
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Keithley 237 source measure unit
237
Keithley
Used for temperature-dependent I-V characteristics measurements.
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Rigaku MiniFlex600 X-ray diffractometer
MiniFlex600
Rigaku
Used for X-ray analysis to check the phase structures of thin films.
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LabRAM HR Evolution micro-Raman spectrometer
HR Evolution
Horiba Scientific
Used for Raman measurements to provide additional information to the XRD data.
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Scienta Omicron ESCA + spectrometer system
ESCA +
Scienta Omicron
Used for X-ray photoemission spectra to study the chemical state of each element.
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