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An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
摘要： Gallium oxide (Ga2O3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga2O3 semiconductor have been analyzed. And the recent investigations on the Ga2O3-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga2O3-based SBD for power electronics application has been analyzed.
关键词： Breakdown electric field,Baliga’s figure of merit,On-resistance,Ultrawide bandgap semiconductor,Gallium oxide (Ga2O3),Power device,Schottky barrier diode (SBD)
更新于2025-09-23 15:22:29
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Breakdown enhancement of diamond Schottky barrier diodes using boron implanted edge terminations
摘要： Boron implanted edge terminations have been demonstrated to enhance the breakdown voltages and stabilities of diamond Schottky barrier diodes (SBDs). The edge terminations were achieved by boron implant to form nonconductive amorphous regions under the edges of the Schottky contacts. Direct current measurements show the implanted regions did not contribute to the forward currents and high current densities of about 4000 A/cm2 were obtained at -5 V. By using boron implanted edge terminations, although an increase in leakage currents was observed, the average breakdown voltage of the devices was significantly improved from 79 V to 125 V, which is increased by more than 50%. In addition, the breakdown voltages of the devices without edge terminations degraded quickly after each repeating measurement, whereas the devices with edge terminations became much more stable and no obvious drop in breakdown voltages was observed.
关键词： Boron implant,Schottky diode,Diamond,Edge termination
更新于2025-09-23 15:22:29
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A novel GaN-based lateral SBD with a TUG-AlGaN/GaN heterojunction
摘要： In this study, a novel GaN-based lateral Schottky barrier diode (SBD) with a thin upward graded AlGaN (TUG-AlGaN) barrier layer is proposed and investigated. The TUG-AlGaN layer upward graded from 0 to 0.50 mole fraction is used to replace the thick AlGaN layer of the heterojunction, which can reduce the distance from the 2-D electron gas (2DEG) to the Anode electrode, retain high density of 2DEG near the heterojunction, and eliminate the abrupt AlGaN/GaN conduction band offset at same time, subsequently can reduce the turn-on voltage and on-state voltage. The simulated results show that compared with the conventional SBD (with 25 nm Al0.23Ga0.77N layer), the proposed SBD achieves 0.32V reduction in turn-on voltage, and 1.21V reduction in on-state voltage. Meanwhile, although the proposed SBD doesn’t deliver obvious improvement in static characteristics when compared with the GaN-Based lateral field-effect rectifier (L-FER) (with 25 nm Al0.23Ga0.77N layer), the reverse recovery time of the proposed SBD is much smaller than that of the L-FER (with 25 nm Al0.23Ga0.77N layer). The outstanding static characteristics combined with excellent switching characteristics reveal its great potential for future power applications.
关键词： turn-on voltage,switching characteristics,thin upward graded AlGaN barrier layer,GaN-based lateral Schottky barrier diode
更新于2025-09-23 15:22:29
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[IEEE 2018 XIV International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE) - Novosibirsk, Russia (2018.10.2-2018.10.6)] 2018 XIV International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE) - Influence of the Output Resistance of Measurement System to I-V Characteristics of Gunn Diodes
摘要： It is noted that there are significant distortions in the measured current-voltage characteristics of Gunn diodes presented in literature: self-heating effects and/or smoothing of the current-voltage characteristic. It is indicated that the self-heating effects are eliminated at the short-pulse measurement of the I-V characteristics, but such measuring systems, as a rule, have an output resistance that comparable (or greater) to the resistance of a Gunn diode. It is shown that an increased output resistance of the measuring system leads to a smoothing of the discontinuity in the I-V curve. A requirement for the output impedance of the meter based on the permissible distortion of the I-V characteristics is establish.
关键词： Gunn diode,I-V curve,jump discontinuity
更新于2025-09-23 15:22:29
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Tunable Spin Seebeck Diode with Magnonic Spin Tunneling Junction
摘要： We theoretically investigate the spin–wave spin current induced by the spin Seebeck effect in magnonic spin tunneling junctions (MSTJs) for arbitrary magnetization directions. We show that the MSTJ functions as a tunable spin Seebeck diode in which the tunneling spin current can be turned on and off with high efficiency by controlling the magnetization direction.
关键词： spin current,spin Seebeck effect,diode,magnetization direction,magnonic spin tunneling junction
更新于2025-09-23 15:22:29
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Radiation tolerance characterization of Geiger-mode CMOS avalanche diodes for a dual-layer particle detector
摘要： An array of Single Photon Avalanche Diodes (SPAD), fabricated in a 180 nm CMOS technology featuring a high voltage (HV) option, has been investigated in terms of radiation tolerance, in view of the design of low material budget dual-tier detectors for charged particle tracking based on the coincidence of signals coming from pairs of vertically aligned pixels. Each pixel in the array includes both the processing electronics and the sensing element in a monolithic structure. The test vehicles were irradiated with 10 keV X-rays up to a dose of 1 Mrad (SiO2) and with neutrons up to a fluence of 1011 n_eq cm?2. A selection of the characterization results are presented together with the main features of a new large scale SPAD array to be fabricated in a 150 nm CMOS technology and ready for vertical interconnection in a dual layer structure.
关键词： Pixelated sensor,CMOS,Single Photon Avalanche Diode,Radiation tolerance,Tracking detectors
更新于2025-09-23 15:22:29
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Effects of Mg incorporation in cubic GaN films grown by PAMBE near Ga rich conditions
摘要： The structural and electrical properties of Mg-doped cubic GaN epi-layers grown by plasma-assisted molecular beam epitaxy (PAMBE) near Ga rich conditions are investigated. The diffraction of high-energy reflected electrons (RHEED) in situ, in addition to structural studies of X-ray diffraction, show that the fraction of hexagonal and crystal twinning inclusions decreases when the Mg flux increases. The condition for the higher incorporation of Mg where the electrical properties are optimized is highly sensitive to the flow ratio Mg/Ga. The p-doping level steadily increases with increasing Mg flux. The Mg concentration obtained by secondary ion mass spectroscopy (SIMS) from samples grown at Mg temperatures from 200 °C to 700 °C are in a range between 2 × 10^19 to 2 × 10^20 atoms/cm^3. The highest mobility and p-type doping level achieved, determined from Hall measurements, were 28.2 cm^2/V-s and 2 × 10^19 cm^-3, respectively. We corroborate that the Mg doped c-GaN films are suitable for the construction of optoelectronic devices based on cubic III-Nitrides.
关键词： Plasma-assisted molecular beam epitaxy,Cubic GaN diode,Mg p-type doping
更新于2025-09-23 15:22:29
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A simulation study of field plate termination in Ga <sub/>2</sub> O <sub/>3</sub> Schottky barrier diodes
摘要： In this work, the field plate termination is studied for Ga2O3 Schottky barrier diodes (SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are demonstrated. It is found that the optimal thickness increases with reverse bias increasing for all the three dielectrics of SiO2, Al2O3, and HfO2. As the thickness increases, the maximum electric field intensity decreases in SiO2 and Al2O3, but increases in HfO2. Furthermore, it is found that SiO2 and HfO2 are suitable for the 600 V rate Ga2O3 SBD, and Al2O3 is suitable for both 600 V and 1200 V rate Ga2O3 SBD. In addition, the comparison of Ga2O3 SBDs between the SiC and GaN counterpart reveals that for Ga2O3, the breakdown voltage bottleneck is the dielectric. While, for SiC and GaN, the bottleneck is mainly the semiconductor itself.
关键词： field plate,termination technique,Ga2O3,Schottky barrier diode
更新于2025-09-23 15:22:29
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Different Isolation Processes for Free-Standing GaN p-n Power Diode with Ultra-High Current Injection
摘要： In this article, we report on the fabrication and high performance of power p-n diodes grown on free-standing (FS) GaN substrate. The key technique to enhance the high breakdown voltage and suppress the surface leakage current is the isolation process. The mesa-structure diode is generally formed by utilizing the inductively coupled plasma reactive ion etching (ICP-RIE); however, it always induces high surface damages and thus causes a high leakage current. In this study, we propose a planar structure by employing the oxygen ion implantation to frame the isolation region. By following the crucial process, the fabricated mesa- and planar-type diodes exhibit the turn-on voltages of 3.5 and 3.7 V, specific on-resistance (RONA) of 0.42 and 0.46 mΩ-cm2, and breakdown voltage (VB) of 2640 and 2880 V, respectively. The corresponding Baliga’s figures of merit (BFOM, i.e., VB2/RONA) are 16.6 and 18 GW/cm2, respectively. The BFOM of 18 GW/cm2 is the highest reported value for FS-GaN diode. From the temperature dependent measurements, the planar-type diode also shows the better leakage current and thermal stability than the mesa-type diode.
关键词： leakage current,Baliga’s figure of merit,breakdown voltage,planar diode,implantation,GaN substrate
更新于2025-09-23 15:22:29
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Large area SiC-UV phothodiode for spectroscopy portable system
摘要： In this work, we present the extensive characterization of large area Silicon Carbide based UV sensors candidate for outdoors spectroscopic applications of gas or liquid. The proposed SiC Schottky devices exhibit dark current density of 0.12 nA/cm2 @ 15 V, a 0.12 A/W responsivity @ 300 nm, optimal visible blindness and switching time of ~ 190 ns. Effects of temperature on the sensor performance, of crucial interest for outdoors applications, are also examined in the range from -20 °C to 90 °C.
关键词： optical sensor,Large area UV photodetector,Schottky diode,SiC detector
更新于2025-09-23 15:22:29