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[IEEE 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2019.11.14-2019.11.15)] 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - High reliability InGaZnO TFT by inductively coupled plasma sputtering system
摘要： The reliability of oxide semiconductor TFT and the method to lower the process temperature have become serious problems. In order to solve these problems, we have developed inductively coupled plasma sputtering equipment that can control the Radio Frequency (RF) power to generate Inductively Coupled Plasma (ICP) and the voltage applied to the sputtering target independently. Using this equipment, we can deposit high-density oxide semiconductor films at room temperature and fabricate highly reliable TFTs with them.
关键词： thin-film transistor(TFT),inductively coupled plasma (ICP) sputtering,InGaZnO (IGZO),reliability
更新于2025-09-16 10:30:52
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Determination of Major Inorganic Nutrients in Maize Tissues by Calibration-Free Laser Induced Breakdown Spectroscopy
摘要： The quality of the available food is the main issue in the developing countries and maize is one of the commonly used foodstuffs in these countries. Laser-induced breakdown spectroscopy (LIBS) was employed to characterize the presence of the major inorganic nutrients in the maize samples. Each of the samples was shown to contain following elements: K, Ca, Mg, Fe, Na, Si, Li, Sr, Ti, Al, and C while Cr was only detected in the seeds. The electron number density was evaluated by the use of the Stark broadened profile of calcium line and the plasma temperatures have been determined using the Boltzmann plot method. Calibration-free LIBS (CF-LIBS) has been used for the quantitative elemental analysis of the samples. The consistency of the concentrations determined by CF-LIBS was validated using inductively coupled plasma – optical emission spectroscopy (ICP-OES).
关键词： calibration-free laser–induced breakdown spectroscopy (CF-LIBS),Maize,Plasma parameters,inductively coupled plasma–optical emission spectroscopy (ICP-OES)
更新于2025-09-12 10:27:22
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Isotropic silicon etch characteristics in a purely inductively coupled SF <sub/>6</sub> plasma
摘要： The characteristics of isotropic etching of silicon in a purely inductively coupled SF6 plasma are quantitatively studied. Since the etch results are strongly dependent on mask features, the authors investigated both large area and narrow trench etch characteristics. Circles of diameter 500 μm were used as a proxy for unpatterned surfaces and etched for different durations to establish the material etch rate and surface roughness. The average etch rate using the chosen recipe was found to be 2.27 μm/min. Arrays of narrow trenches ranging from 8 to 28 μm were also etched to analyze the effect of trench size on etch rate and degree of anisotropy. The etch rate of the trenches was found to strongly decrease with decreasing trench width. The results demonstrate that isotropic SF6 etch can be readily used as a replacement for more exotic silicon vapor phase etch chemistries such as XeF2.
关键词： etch rate,silicon,isotropic etching,SF6 plasma,inductively coupled plasma,anisotropy
更新于2025-09-12 10:27:22
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The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the APD with GaN/AlN Periodically‐Stacked‐STRUCTURE
摘要： Inductively Coupled Plasma (ICP) is widely used in dry etching of III-nitride materials, wherein the etching parameters of GaN and AlN are very different. In this paper, the ICP dry etching process parameters of GaN/AlN periodically-stacked-structure (PSS) for avalanche photodiode fabrication have been intensively studied and optimized. The flow rate ratio of Cl2/BCl3/Ar plasma, bias voltage, and the GaN-to-SiNx selectivity of ICP etching were optimized to achieve excellent surface morphology and nearly vertical sidewalls. It was found that the etching rate and the etched surface roughness of GaN/AlN material were significantly influenced by the flow rate of Cl2. After optimizing the etching procedure, the root-mean-square roughness (RMS) of the etched surface was measured to be 1.46 nm, which is close to the as grown surface. By employing the optimized ICP dry etching in the fabrication of the GaN/AlN PSS avalanche photodiode (APD), the dark current was suppressed from 3.6 A/cm2 to 8.2×10-3 A/cm2 at -90 V.
关键词： GaN/AlN,dark current,molecular beam epitaxy,inductively coupled plasma,avalanche photodiode
更新于2025-09-12 10:27:22
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Nonaqueous synthesis of TiO2 nanorods using inductively coupled plasma
摘要： Titanium dioxide (TiO2) nanorods are widely used in many fields such as self-cleaning surfaces, photocatalytic lithography and pollutant control, owing to their outstanding physical, chemical and optical properties. Traditional methods for synthesizing TiO2 nanorods are mostly tedious with high cost and tremendous energy consumption. In this work, TiO2 nanorods with excellent optical, electrochemical, and hydrophilic properties were rapidly synthesized on titanium alloy (TC4) by using inductively coupled plasma (ICP) with strong chemical reactivity and high temperature characteristic. XRD patterns and SEM images confirm the conversion of TC4 into rutile TiO2 nanorods after irradiated by ICP at 800 W for only one pass, and the nanorods tend to grow longitudinally under prolonged ICP processing. Moreover, the well-developed single-crystalline feature of TiO2 nanorod is affirmed by TEM test. To reveal the growth mechanism of TiO2 nanorods, three types of substrates (polished TC4 by electrochemical polishing (ECP), polished TA2 by ECP and oxidized TC4 by anodizing) were used to grow TiO2 nanorods. However, TiO2 nanorods with good morphology were only formed on the first type of substrate due to the existence of β phase Ti, which could suppress thermal transmission between grains. In addition, the results of UV–Vis absorption spectrum, electrochemical test, and static water contact angle of the treated TC4 samples show that TiO2 nanorods synthesized by ICP possess excellent optical, electrochemical, and hydrophilic properties.
关键词： Inductively coupled plasma,Hydrophilicity,Optical property,TiO2 nanorods,Thermal oxidation
更新于2025-09-12 10:27:22
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Laser based analysis of transition metal boride thin films using liquid standards
摘要： In this work the use of two laser assisted direct solid sampling methods, laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS), and laser induced breakdown spectroscopy (LIBS) for the determination of the stoichiometry of novel diboride based materials is reported. To overcome the need for certified reference materials or matrix matched standards, which were usually required for quantitative investigations with LA-ICP-MS or LIBS, in this work liquid standards are employed. For LA-ICP-MS the concept of self-aliquoting micro-grooves and for LIBS conventional dried droplets were used. As a model for application of the developed analytical procedures the ternary system W1-xTaxB2-z was used. Fabrication of W1-xTaxB2-z thin films with varying stoichiometry was performed via magnetron sputtering. Reference compositions were obtained by liquid digestion of the samples and subsequent ICP-OES measurement. Both laser-assisted methods enabled fast and spatially resolved measurements, although the LA-ICP-MS method generally yielded more accurate results. It was shown that the method can easily be adapted for the stoichiometry determination of systems with different elemental composition.
关键词： laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS),liquid calibration,Laser-induced breakdown spectroscopy (LIBS),borides,thin films
更新于2025-09-11 14:15:04
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Gallium Oxide || Dry etching of Ga2O3
摘要： There is generally a need to pattern Ga2O3 when fabricating devices such as UV solar blind photodetectors, various types of transistors, as well as sensors [1, 2]. The patterning is carried out by etching the semiconductor, using dielectric or photoresist masks to protect the active areas. There are two basic classes of etch processes, those carried out in the liquid phase (known as wet etching) and those performed in the gas phase (called dry etching, especially when a plasma is used to provide the reactive species for etching) [3]. Etch processes may be classified by their rate, selectivity, uniformity, directionality (isotropy or anisotropy), surface quality, and reproducibility [3]. All etching processes involve three basic events: (i) movement of the etching species to the surface to be etched, (ii) chemical reaction to form a compound that is soluble in the surrounding medium, and (iii) movement of the by-products away from the etched region, allowing fresh etchant to reach the surface. Both (i) and (iii) usually are referred to as diffusion, although convection may be present. The slowest of these processes primarily determines the etch rate, which may be diffusion or chemical-reaction limited.
关键词： reactive ion etching,inductively coupled plasma,Ga2O3,plasma etching,dry etching
更新于2025-09-09 09:28:46