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Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation
摘要： Epitaxial growth of III-V heterostructures on non-native substrates such as Silicon (Si) or Germanium (Ge) is one of the promising research topics for the last two decades. The interface between polar III-V semiconductors and non-polar substrates (Si or Ge) plays a crucial role in monolithic integration. However, there is an anticipation of epitaxial GaAs growth on Ge substrate because of the lower mismatch of lattice constants and thermal expansion coefficients between them. Therefore, the high-quality growth of III-V semiconductor heterostructures on Ge substrates would overcome the impediment to Si-photonics, where the monolithic integration of optoelectronic device structures can be done using a Ge graded layer on Si. Here, we have explored the epitaxial growth of multi-layer InGaAs/GaAs quantum dot heterostructures on Ge substrates and compared the optical and structural properties with the QDs grown on GaAs substrate. The optical properties of all samples are investigated with the help of photoluminescence (PL) and time-resolved photoluminescence (TRPL), whereas the morphology of the QDs is observed through cross-sectional transmission electron microscopy (XTEM) images. An enhancement in the optical characteristics (PL peak wavelength, activation energy, carrier lifetime) is found for the QDs grown on Ge substrate with the super-lattice buffer (SLB) layer. The minimization of defects and dislocations in the heterostructure is also realized for the structure with the SLB layer. Furthermore, a two-fold enhancement in PL intensity and 24 meV increment in activation energy is achieved through ex-situ H ion-implantation, which approached the values obtained for the QD heterostructure grown on GaAs substrate.
关键词： Photoluminescence,Molecular beam epitaxy,Time-resolved photoluminescence,Silicon photonics,Quantum dots,Ion implantation
更新于2025-09-23 15:19:57
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1200nma??Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation
摘要： In this paper, the quantum dot intermixing (QDI) technique previously developed for 1550nm-band InAs/InAlGaAs quantum dot (QD) was applied to 1200nm-band InAs/GaAs QD. Three methods of defect introduction for triggering the QDI were employed such as ICP-RIE (Ar+) and ion implantation (Ar+ and B+). As a result, about 80nm PL peak wavelength shift was obtained for ICP-RIE when annealing was performed at 575 °C, after etching down to 450 nm to the QD layer. On the other hand, about 110nm PL peak wavelength shift was obtained for B+ ion implantation at an acceleration energy of 120 keV and a dose of 1.0×1014 /cm2 and subsequent annealing. Cross sectional image analyses by Scanning Transmission Electron Microscope (STEM) and Energy-Dispersive X-ray Spectroscopy (EDX) clarified the modification of InAs QD structures by the QDI process.
关键词： intermixing,InAs/GaAs quantum dot,ICP-RIE,rapid thermal annealing,ion implantation
更新于2025-09-23 15:19:57
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Bismuth-Doped Phosphate Glasses and H+-Implanted Waveguides
摘要： The work reports on the preparation and optical characterization of 75P2O5-15B2O3-9Al2O3-Bi2O3 glass by using the melt-quenching method and absorption spectroscopy, respectively. Further, 0.4-MeV proton implantation of a ?uence of 8.0 × 1016 ions/cm2 was carried out on this glassy sample and it was tested as a waveguide at a wavelength of 632.8 nm for the ?rst time to our knowledge. The m-line curves of the waveguide were measured before and after successive annealing treatments. The formation theory of the planar waveguides is discussed through simulations of the energy loss distribution and analysis of the reconstructed refractive index pro?le. The results should be useful in the design and fabrication of bismuth-doped phosphate glass and its use in integrated photonics devices.
关键词： Bismuth-doped phosphate glass,Optical waveguide,Ion implantation
更新于2025-09-23 15:19:57
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A Data-Driven Home Energy Scheduling Strategy Under the Uncertainty in Photovoltaic Generations
摘要： We report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation. The planar APDs have a low background doping of 2 × 1014 cm?3 and large depletion widths approaching 8 μm. The thick depletion width enabled a gain of 330 to be achieved at ?26 V at 200 K without inducing a significant tunneling current. No edge breakdown was observed within the APDs. The surface leakage current was found to be low with a gain normalized dark current density of 400 μAcm?2 at ?20 V at 200 K.
关键词： Avalanche photodiodes,ion implantation,infrared detectors
更新于2025-09-23 15:19:57
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Ion Implantation - Research and Application || MeV Electron Irradiation of Ion-Implanted Si-SiO2 Structures
摘要： The effect of (10–25) MeV electron irradiation on Si‐SiO2 structures implanted with different ions (Ar, Si, O, B, and P) has been investigated by different methods, such as deep‐level transient spectroscopy (DLTS), thermo‐stimulated current (TSCM), Rutherford backscattering (RBS), and soft X‐ray emission spectroscopy (SXES). It has been shown that in double‐treated Si‐SiO2 structures, the defect generation by high‐energy electrons depends significantly on the location of preliminary implanted ions relative to the Si‐SiO2 interface as well as on the type (n‐ or p‐Si) of silicon wafer. SiO2 surface roughness changes, induced by ion implantation and high‐energy electron irradiation of Si‐SiO2 structures, are observed by the atomic force microscopy (AFM). Si nanoclusters in SiO2 of ion‐implanted Si‐SiO2 structures generated by MeV electron irradiation is also discussed.
关键词： ion implantation,Si nanoclusters,MeV electron irradiation,Si‐SiO2 structures,radiation defects
更新于2025-09-23 15:19:57
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European Microscopy Congress 2016: Proceedings || An in-situ Low Energy Argon Ion Source for Local Surface Modification
摘要： A new in-situ low energy ion source for surface modification of a sample surface has been designed. The source is based on the principle of low energy ion bombardment from a beam of ions such as Ar+, N+, or He+ can be used for a local modification of the sample surface. Typical energies are in the range 10 - 100 eV, covering the interaction types from chemical reaction to ion etching and to ion implantation. The source is based on the following principle: electrons from a filament are accelerated towards a grid by a potential difference between the filament and the grid. The electrons enter a gas-filled region between the grid and the sample, where they ionize the gas. The ions are then accelerated towards the sample by a potential difference between the grid and the sample. The source produces a static beam of ions with a selectable energy of 10-100 eV and a full width half maximum (FWHM) of 7.1 um. This corresponds to a central ion current density of 0.019 nA/um2 at 100 eV, which is very similar to the current density at 100 eV of a regular ICP source. In this way, the sample area that is affected by the low energy ions can be more or less defined by the applied bias voltage. The first application can be polishing the top surface of a TMD laminate produced by CVD, or improvement of and LPE surface prepared by ICP. An example of the interaction with the beam is shown in Figure 1, where a native oxide on Si has been removed in 25 seconds, using 100 eV Ar+ ions.
关键词： Ar+,surface modification,low energy ion source,chemical reaction,FWHM,native oxide removal,ion etching,ICP,current density,static beam,N+,ion bombardment,TMD,He+,LPE,ion implantation,in-situ,gas ionization,filament,grid,CVD
更新于2025-09-19 17:15:36
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Scalable fabrication of a complementary logic inverter based on MoS <sub/>2</sub> fin-shaped field effect transistors
摘要： Integration of high performance n-type and p-type field-effect transistors with complementary device operation in the same kind of layered materials is highly desirable for pursuing low power and flexible next-generation electronics. In this work, we have shown a well-mannered growth of MoS2 on a fin-shaped oxide structure and integration of both n-type and p-type MoS2 by using a traditional implantation technique. With the advance of the fin-shaped structure, the maxima and the effective ON current density for the MoS2 fin-shaped field-effect transistors are respectively obtained to be about 50 μA μm?1 (normalized by the circumference of the fin) and around 500 μA μm?1 (only normalized by the fin size), while its ON/OFF ratio is more than 10? with low OFF current of a few pA. Based on our n-type and p-type MoS2 fin-shaped field-effect transistors, the complementary MoS2 inverter with a high DC voltage gain of more than 20 is acquired. Our results provide evidence for complementary 2D material operation in the same materials, a promising avenue for the development of high performance and high-density complementary 2D electronic devices.
关键词： ion implantation,2D materials,fin-shaped field-effect transistors,MoS2,complementary logic inverter
更新于2025-09-19 17:15:36
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[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation
摘要： In this paper, we applied the quantum dot intermixing (QDI) technique developed for 1550nm-band InAs QD to 1300nm-band InAs/GaAs QD. Two methods of defect introduction for QDI were employed such as ICP-RIE (Ar+) and ion implantation (B+). As a result, about 80nm PL wavelength peak shift was obtained for ICP-RIE when annealing was performed at 575 (cid:933), after etching down to 450 nm to the QD layer. On the other hand, about 110nm wavelength shift was obtained for B+ implantation at an acceleration voltage of 120 keV and a dose of 1.0 × 1014 /cm2 and subsequent annealing.
关键词： ion implantation,ICP-RIE,QDI,InAs/GaAs QD
更新于2025-09-19 17:13:59
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Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers
摘要： This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epitaxial layers. Samples were then characterized through micro-Raman spectroscopy, Photoluminescence (PL) and Transmission Electron Microscopy (TEM) and results were compared with those coming from P implanted thermally annealed samples at 1650–1700–1750 °C for 30 min. The activity outcome shows that laser annealing allows to achieve full crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Moreover, laser treated crystal shows an almost stress-free lattice with respect to thermally annealed samples that are characterized by high point and extended defects concentration. Laser annealing process, instead, allows to strongly reduce carbon vacancy (VC) concentration in the implanted area and to avoid intra-bandgap carrier recombination centres. Implanted area was almost preserved, except for some surface oxidation processes due to oxygen leakage inside the testing chamber. However, the results of this experimental activity gives way to laser annealing process viability for damage recovery and dopant activation inside the implanted area.
关键词： ion implantation,phosphorus,point defects,laser annealing,photoluminescence,aluminum,TEM,Metal Oxide Semiconductor Field Effect Transistor (MOSFET),SiC,Raman
更新于2025-09-19 17:13:59
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[IEEE 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - Xiamen, China (2019.12.17-2019.12.20)] 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - High Average Power Picosecond Thulium-doped All-fiber Amplifier
摘要： We report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation. The planar APDs have a low background doping of 2 × 1014 cm?3 and large depletion widths approaching 8 μm. The thick depletion width enabled a gain of 330 to be achieved at ?26 V at 200 K without inducing a significant tunneling current. No edge breakdown was observed within the APDs. The surface leakage current was found to be low with a gain normalized dark current density of 400 μAcm?2 at ?20 V at 200 K.
关键词： ion implantation,infrared detectors,Avalanche photodiodes
更新于2025-09-19 17:13:59