研究目的
Investigating the quantum dot intermixing (QDI) technique for 1200nm-band InAs/GaAs quantum dots (QDs) to achieve significant photoluminescence (PL) peak wavelength shifts through various defect introduction methods.
研究成果
The QDI technique, particularly using B+ ion implantation with successive RTA, was found effective for achieving significant PL peak wavelength shifts in 1200nm-band InAs/GaAs QDs. This method offers potential for monolithic integration of QD lasers with modulators and waveguides, enhancing performance and functionality for data center networks.
研究不足
The study notes that the QDI process may lead to inhomogeneous element diffusion, resulting in discontinuous PL spectra shifts. The effectiveness of Ar+ ion implantation was limited due to the shallow penetration depth, making it unsuitable for applications requiring deep vacancy introduction.
1：Experimental Design and Method Selection:
The study employed three methods for defect introduction to trigger QDI: ICP-RIE (Ar+), and ion implantation (Ar+ and B+). The effectiveness of these methods was compared based on PL peak wavelength shifts and intensity.
2：Sample Selection and Data Sources:
The 1200nm-band InAs/GaAs QD wafer was grown on a (100) GaAs substrate by molecular beam epitaxy (MBE).
3：List of Experimental Equipment and Materials:
Equipment included ICP-RIE for dry etching, ion implantation setup for Ar+ and B+ ions, and Rapid Thermal Annealing (RTA) system. Materials included the QD wafer and SiO2 film for surface protection during RTA.
4：Experimental Procedures and Operational Workflow:
The process involved introducing vacancies via dry etching or ion implantation, followed by RTA at various temperatures to facilitate element diffusion and crystal quality recovery.
5：Data Analysis Methods:
PL spectra were analyzed to determine peak wavelength shifts. STEM and EDX were used for structural analysis of the QDs post-QDI.
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