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Channeled Implantations of p-Type Dopants into 4H-SiC at Different Temperatures
摘要： Channeling of B and Al ions in 4H-SiC(0001), has been investigated by secondary ion mass spectrometry (SIMS). Ion implantations have been performed between room temperature (RT) and 600 °C at various fluences. Before implantation, the major crystal axes were determined and the sample was aligned using the blocking pattern of backscattered protons. As expected, the depth distribution of the implanted ions along a crystal direction penetrates much deeper compared to non-channeling directions. At elevated temperatures, the channeling depth for 100 keV Al-ions is decreased due to lattice vibrations. For 50 keV B-ions, the temperature effect is minor, indicating a smaller interaction between target atoms and B. Simulations has been performed using SIIMPL, a Monte Carlo simulation code based on the binary collision approximation, to predict experimental data and get a deeper insight in the channeling process.
关键词： Channeling,Boron,SIMS,Ion implantation,Aluminum
更新于2025-09-12 10:27:22
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p-type doping of Ge by Al ion implantation and pulsed laser melting
摘要： Germanium recently attracted a renewed interest for its potential applications in several fields such as nanoelectronics, photonics, plasmonics, etc., but well-known issues about doping at high concentration and controlling impurity profiles prevent its integration in technology. To this purpose, p-type doping aluminum ion implantation followed by pulsed laser annealing in the melting regime has been investigated for the first time. In particular, two different regimes have been studied, in order to explore the limit of incorporation for such a method: 6.4 × 1014 Al/cm2 and 4.2 × 1015 Al/cm2, both at 25 keV, corresponding to concentrations below and above the solid solubility, respectively. We found that in the former case, oxygen contamination precludes full activation (< 60 %), as suggested by Raman characterizations. Besides, secondary ion mass spectrometry evidences pronounced out-diffusion and pile-up of the dopant near the surface. In the letter case, remarkable (～ 1 × 1020 Al/cm3), although partial (～ 30%), electrical activation is obtained, independently on O occurrence. Therefore, O-Al and Al-Al clustering are proposed as concurrent mechanisms, limiting full activation at high implanted dose. Nevertheless, the samples display good crystalline quality and, surprisingly, a significant thermal stability (up to 600° C).
关键词： Laser processing,Germanium,Doping,Ion Implantation,Aluminum
更新于2025-09-12 10:27:22
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Single-mode infrared-fiber waveguide on ZnSe single crystal
摘要： We report on the fabrication of planar and channel single mode waveguide operating at infrared-fiber band in ZnSe single crystal by using 6.0 MeV C and O ion implantation and standard lithography technique. The effective refractive indices of the planar waveguide mode at 1539 nm is recorded using the prism-coupling method at the dark environment. Near field intensity distributions of the single mode in ZnSe single crystal waveguide at 1539 nm are measured by an end-face coupling system and reconstructed by the finite difference beam propagation method, respectively. Micro-Raman spectrometry is used to analyze microstructural changes of the substrate and waveguide structure.
关键词： lithography technique,single mode,infrared-fiber waveguide,ZnSe single crystal,ion implantation
更新于2025-09-11 14:15:04
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Two-terminal terahertz detectors based on AlGaN/GaN high-electron-mobility transistors
摘要： We report an approach to make two-terminal antenna-coupled AlGaN/GaN high-electron-mobility-transistor self-mixing terahertz detectors. Fluorine ion implantation is used to increase the threshold voltage of the AlGaN/GaN two-dimensional electron gas. An optimal implantation dose can be reached so that the detector responsivity is maximized at zero gate voltage or with the gate ?oating. The relationship between the ion dosage and the threshold voltage, electron mobility, electron density, responsivity, and noise-equivalent power (NEP) is obtained. A minimum optical NEP of 47 W= ??????Hz is achieved from a two-terminal detector at 0.65 THz. The capability of two-terminal operation allows for the design of a large array of antenna-coupled high-electron-mobility transistor detectors without the demanding needs of routing negative gate voltage lines around the antenna array and minimizing the gate leakage current.
关键词： two-terminal operation,terahertz detectors,AlGaN/GaN,fluorine ion implantation,high-electron-mobility transistors
更新于2025-09-11 14:15:04
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Regional Band‐Gap Tailoring of 1550nm‐band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth
摘要： The regional control of the band-gap energies using the highly-stacked quantum dot (QD) on InP (311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B+ implantation and rapid thermal annealing (RTA) around 600 °C, in which the ion implantation depths are controlled regionally with a combination of SiO2 and polymer (AZ) films. Controlled blue shifts of the photoluminescence (PL) spectra verify the effectiveness of the regionally controlled QDI process for application to semiconductor photonic integrated circuits using 1550nm-band QD such as integrated WDM light sources.
关键词： rapid thermal annealing,intermixing,ion implantation,quantum dot
更新于2025-09-11 14:15:04
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Ultra-fast annealing manipulated spinodal nano-decomposition in Mn-implanted Ge
摘要： In the present work, millisecond-range flash lamp annealing is used to recrystallize Mn-implanted Ge. Through systematic investigations of structural and magnetic properties, we find that the flash lamp annealing produces a phase mixture consisting of spinodally decomposed Mn-rich ferromagnetic clusters within a paramagnetic-like matrix with randomly distributed Mn atoms. Increasing the annealing energy density from 46, via 50, to 56 J cm?2 causes the segregation of Mn atoms into clusters, as proven by transmission electron microscopy analysis and quantitatively confirmed by magnetization measurements. According to x-ray absorption spectroscopy, the dilute Mn ions within Ge are in d5 electronic configuration. This Mn-doped Ge shows paramagnetism, as evidenced by the unsaturated magnetic-field-dependent x-ray magnetic circular dichroism signal. Our study reveals how spinodal decomposition occurs and influences the formation of ferromagnetic Mn-rich Ge–Mn nanoclusters.
关键词： flash lamp annealing,ion implantation,spinodal decomposition,Ge–Mn nanoclusters
更新于2025-09-11 14:15:04
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Effect of Ion Implantation-Induced Defects on Leakage Current Characteristics of IEMOS
摘要： We investigated the relationship between ion implantation-induced defects and electrical characteristics, especially focusing on the leak failure rate in SiC IEMOSs and PN diodes. It was found that dislocation exists in each leakage point by analyzing identical leak-failed IEMOS by emission microscopy and refraction X-ray topography. The leak failure rate of the PN diodes and IEMOS was improved with an increase in the ion implantation temperature under the implantation and annealing conditions used in this experiment. It is considered that ion implantation-induced defects lead to an increase in leak failure rates, and also enable a decrease in leak failure rates by raising the implantation temperature up to 600 °C.
关键词： activation annealing,leakage current,ion implantation,silicon carbide
更新于2025-09-10 09:29:36
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Influence of Lateral Straggling of Implated Aluminum Ions on High Voltage 4H-SiC Device Edge Termination Design
摘要： This paper presents the analysis of Aluminum profile implanted into 4H-SiC with low background doping concentration. A strong lateral straggling effect was discovered with secondary electron potential contrast (SEPC) method, and analyzed by Sentaurus Monte Carlo simulations. The effect of lateral straggling was included in the edge termination design using Sentaurus TCAD simulation tool, and the results are compared with design not including the lateral straggling effect. The effect of interface charge on the electric field distribution and breakdown voltage of different 10kV device edge termination designs was compared and analyzed.
关键词： Edge Termination,Ion Implantation,Lateral Straggling
更新于2025-09-10 09:29:36
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Light-emitting 9R-Si phase formed by Kr <sup>+</sup> ion implantation into SiO <sub/>2</sub> /Si substrate
摘要： Light-emitting layers of hexagonal 9R silicon were synthesized by ion implantation into SiO2/Si substrates. Using cross-sectional transmission electron microscopy, the formation of a 9R phase in a cubic silicon substrate near the interface with silicon dioxide under irradiation with Krt ions (80 keV) and subsequent annealing at 800 (cid:2)C is demonstrated. Arguments explaining how the new phase is formed through hexagonalization of the initial cubic silicon are presented. The synthesized 9R-Si layers are characterized by a low-temperature photoluminescence line with the maximum at a wavelength around 1240 nm. First-principles calculations of the 9R-Si electronic band structure showed that this material is an indirect-gap semiconductor with the bandgap value of 1.06 eV, which is in good agreement with the spectral position of the experimentally observed photoluminescence line. Believing that the proposed approach can be extended to other semiconductors, we calculated the electronic band structure of 9R germanium and predicted that the hexagonalization converts cubic Ge into a direct-gap semiconductor with the bandgap of 0.48 eV.
关键词： hexagonal silicon,photoluminescence,electronic band structure,9R-Si,ion implantation
更新于2025-09-10 09:29:36
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Spin-Polarized Positron Annihilation Measurement on Ga Vacancies in p-type GaN
摘要： Nitrogen-implanted p-type GaN (cid:12)lms have been investigated through the Doppler broadening of annihilation radiation (DBAR) measurements with spin-polarized positrons and magnetization (M {H) measurements. The DBAR spectra showed asymmetry upon magnetic-(cid:12)eld reversal at 300 K, while no asymmetry appeared at 30 K. This result indicates that excess electron spins at Ga vacancies are aligned under the application of magnetic (cid:12)eld at 300 K, but such spin ordering vanishes at low temperatures. No hysteresis was found in M {H curves both at 10 K and 300 K. This means that no macroscopic magnetism appears even though excess electron spins at Ga vacancies are introduced.
关键词： Positron spectroscopy,Ion implantation methods,Gallium nitride
更新于2025-09-10 09:29:36