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- 2019
- low-temperature electronics
- junction field-effect transistors
- differential operational amplifier
- LTspice environment
- differential stage
- common-mode rejection ratio
- class AB operation
- optimization of analog electronic circuit
- operational amplifier
- LTspice environment
- Electronic Science and Technology
- Don State Technical University
- Southern Federal University
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Field emission assisted micro plasma discharges at vacuum and atmospheric pressures
摘要： Spatially confined non-equilibrium plasmas at vacuum and atmospheric pressure in the dimensions from a few microns to one millimeter are a promising approach to the generation and maintenance of stable glow discharges. The realization of these micro-discharges or micro-plasmas enable more accurate investigations in the field of micro plasma research. We report on field emission assisted micro plasmas excited by an alternating current with frequencies up to 1 kHz. Due to the field enhancement caused by an array of Si nano-tip structures the ignition voltage of stable plasma discharges can be reduced by 30%.
关键词： low-temperature plasma,field emission array,dielectric barrier discharge,plasma discharge
更新于2025-09-23 15:21:21
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<i>(Invited)</i> Fabrication Technique for Low-Temperature Aqueous Solution-Processed Oxide Thin-Film Transistors
摘要： Solution-processing of oxide semiconductor is a promising technique for the simple and low-cost fabrication of oxide thin-film transistors (TFTs). We demonstrate improved TFT characteristics by application of a hydrogen injection and oxidation (HIO) process to the fabrication of high-performance low-temperature oxide TFTs. The compatibility of this technique for flexible substrates was also confirmed when the HIO method was applied to solution-processed metal oxide TFTs.
关键词： solution-processing,flexible substrates,low-temperature fabrication,oxide thin-film transistors,hydrogen injection and oxidation
更新于2025-09-23 15:21:21
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Metal Catalysts for Layer Exchange Growth of Multilayer Graphene
摘要： Metal-induced layer-exchange growth of amorphous carbon (a-C) is a unique technique for fabricating high-quality, uniform multilayer graphene (MLG) directly on an insulating material. Here, we investigated the effect of transition metal species on the interaction between metals and a-C in the temperature range of 600–1000 °C. As a result, metals were classified into four groups: (1) layer exchange (Co, Ni, Cr, Mn, Fe, Ru, Ir, and Pt), (2) carbonization (Ti, Mo, and W), (3) local MLG formation (Pd), and (4) no graphitization (Cu, Ag, and Au). Some layer-exchange metals allowed for low-temperature MLG synthesis at 600 °C, whereas others allowed for high-quality MLG with a Raman G/D peak ratio of up to 8.3. Based on the periodic table, we constructed metal selection guidelines for growing MLG on an insulator, opening the door for applications that combine advanced electronic devices with carbon materials.
关键词： graphene on insulator,multilayer graphene,layer exchange,low temperature
更新于2025-09-23 15:21:21
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Photonic materials for high-temperature applications: Synthesis and characterization by X-ray ptychographic tomography
摘要： Photonic materials for high-temperature applications need to withstand temperatures usually higher than 1000 ?C, whilst keeping their function. When exposed to high temperatures, such nanostructured materials are prone to detrimental morphological changes, however the structure evolution pathway of photonic materials and its correlation with the loss of material’s function is not yet fully understood. Here we use high-resolution ptychographic X-ray computed tomography (PXCT) and scanning electron microscopy (SEM) to investigate the structural changes in mullite inverse opal photonic crystals produced by a very-low-temperature (95 ?C) atomic layer deposition (ALD) super-cycle process. The 3D structural changes caused by the high-temperature exposure were quantified and associated with the distinct structural features of the ceramic photonic crystals. Other than observed in photonic crystals produced via powder colloidal suspensions or sol-gel infiltration, at high temperatures of 1400 ?C we detected a mass transport direction from the nano pores to the shells. We relate these different structure evolution pathways to the presence of hollow vertexes in our ALD-based inverse opal photonic crystals. Although the periodically ordered structure is distorted after sintering, the mullite inverse opal photonic crystal presents a photonic stopgap even after heat treatment at 1400 ?C for 100 h.
关键词： Ptychography X-ray computed tomography,High-temperature applications,3D image analysis,Photonic materials,Low-temperature atomic layer deposition
更新于2025-09-23 15:21:01
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SiO<sub>2</sub> nanoparticle-regulated crystallization of lead halide perovskite and improved efficiency of carbon-electrode based, low temperature planar perovskite solar cells
摘要： SiO2 nanoparticles were used to regulate the crystallizing process of lead halide perovskite film that prepared by the sequential deposition method, which was used in the low temperature processed, carbon-electrode basing, hole-conductor-free planar perovskite solar cells. It was observed that, after adding small amount of SiO2 precursor (1% in volume ratio) into the lead iodide solution, performance parameters of open-circuit voltage, short-circuit current and fill factor were all upgraded, which helped to increase the power conversion efficiency (reverse scan) from 11.44(±1.83)% (optimized at 12.42%) to 14.01(±2.14)% (optimized at 15.28%, AM 1.5G, 100 mW/cm2). Transient photocurrent decay curve measurements showed that, after the incorporation of SiO2 nanoparticles, charge extraction was accelerated, while transient photovoltage decay and dark current curve tests both showed that recombination was retarded. The improvement is due to the improved crystallinity of the perovskite film. X-ray diffraction and scanning electron microscopy studies observed that, with incorporation of amorphous SiO2 nanoparticles, smaller crystallites were obtained in lead iodide films, while larger crystallites were achieved in the final perovskite film. This study implies that, amorphous SiO2 nanoparticles could regulate the coarsening process of the perovskite film, which provides an effective method in obtaining high quality perovskite film.
关键词： SiO2 (61.46.Hk),crystallization(81.10.-h),low temperature(84.60.Jt),perovskite solar cell(88.40.H-),lead iodide(61.82.Rx),carbon-electrode(88.40.HJ)
更新于2025-09-23 15:21:01
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Shallow and Deep Trap States Passivation for Low-Temperature Processed Perovskite Solar Cells
摘要： While perovskite solar cells (PSCs) have emerged as promising low-cost solar power generators, most reported high-performance PSCs employ electron transport layers (ETLs, mainly TiO2) treated at high temperatures (≥450 °C), which may eventually hinder the development of flexible PSCs. Meanwhile, the development of low-temperature processed PSCs (L-PSCs) possessing performance levels comparable to that of high-temperature processed PSCs has actively been reported. In this study, L-PSCs with improved long-term stability and negligible hysteresis were developed through the effective passivation of shallow and deep traps in organic-inorganic hybrid perovskite (OIHP) crystals and at the ETL/OIHP interface. L-PSCs with alkaline chloride modification achieved state-of-the-art performance among reported L-PSCs (power conversion efficiency (PCE) = 22.6%) with a long-term shelf life. The origin of long-term stability and the efficient passivation of deep traps was revealed by monitoring the trap-state distribution. Moreover, the high PCE of a large-area device (21.3%, 1.12 cm2) were also demonstrated, confirming the uniformity of the modification.
关键词： trap states passivation,low-temperature processed,alkaline chloride modification,perovskite solar cells,long-term stability
更新于2025-09-23 15:21:01
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Structural Design and Pyroelectric Property of SnS/CdS Heterojunctions Contrived for Low-Temperature Visible Photodetectors
摘要： The traditional photodetectors based on photoelectric effect exhibit inferior response or even out of operation with the decrease of temperature. However, cryogenic visible light detection is increasingly demanded in deep space and polar exploration. Herein, a self-powered visible photodetector coupling pyroelectricity and photoelectricity to optimize the cryogenic detecting performance is designed in which hydrothermally grown CdS nanorod array is covered by SnS nanoflakes. The choice of SnS allows the detector with strong visible light absorption and great photoelectric conversion efficiency, while the CdS nanorod structure with pyroelectricity can effectively modulate the behavior of photogenerated carriers at low temperatures. It is found that the response characteristics of the photodetector are dominated by the combination of pyroelectric and photoelectric effects, which becomes more significant with the reduced temperature. Specifically, at 130 K temperature, the photoresponse current under 650 nm light is improved by 7.5 times as that at room temperature, while the ratio of pyroelectric current to photocurrent can be increased to 400%. Meanwhile, the responsivity and detectivity are as high as 10.4 mA W?1 and 3.56 × 1011 Jones, respectively. This work provides a promising approach to develop high-performance self-powered visible photodetectors with low-temperature operating capability.
关键词： pyroelectric,CdS,photodetectors,self-powered,low temperature
更新于2025-09-23 15:21:01
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Benchmark of Disilane and Liquid Si for the Low Temperature Epitaxial Growth of Si, SiGe and SiGeB
摘要： We have benchmarked Liquid Silicon and Disilane for SiGe(:B) growth with Digermane and Diborane in the 450-550°C range (P=20 Torr). The Si growth rate exponentially increased with temperature (Ea = 37 kcal.mol.-1) and was, at 500°C, ten time higher with LS than with SiH4 (although the Si flow was 9 times lower). At 500°C, the SiGe GR (the Ge content) increased linearly (sub-linearly) with the Ge2H6 flow and was higher (definitively lower) with LS than with Si2H6. The SiGe growth rate exponentially increased with temperature (Ea = 10.5 kcal.mol-1) while the Ge content decreased (-1.95%/10°C). SiGe:B layers grown at 500°C with LS were pseudomorphic for all save the highest B2H6 flow. The SiGe:B GR and the atomic Boron concentration increased with F(B2H6), while the resistivity decreased (down to 3.1×10-4Ω.cm). Islands becoming less dense and smaller as the B2H6 flow increases were present on the SiGe:B surfaces which were atomically smooth.
关键词： SiGe,SiGeB,Liquid Silicon,Disilane,low temperature epitaxial growth
更新于2025-09-23 15:21:01
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A Benchmark of 300mm RP-CVD Chambers for the Low Temperature Epitaxy of Si and SiGe
摘要： we have assessed, in 300 mm Reduced Pressure – Chemical Vapour Deposition chambers from major suppliers, the advantages and drawbacks of disilane for the low temperature growth of Si and SiGe. Si growth rates are, for T < 575°C, approximately ten times higher with Si2H6 than with SiH4, which are in turn roughly ten times higher than with SiH2Cl2. For given GeH4 and Si precursor mass-flow ratios, lower Ge contents and much higher SiGe growth rates are obtained at 550°C, 20 Torr with Si2H6 than with SiH4 and especially SiH2Cl2. Growth rates (Ge concentrations) are with SiH4 and SiH2Cl2 lower (slightly lower) in Supplier A than in Supplier B chamber. The situation is the opposite with Si2H6. This is assigned to (i) a ~ 5°C offset between the two and (ii) effective precursor flows which are different, most likely due to chamber geometry differences. Growth rate activation energies and relationships linking Ge concentration to precursor mass-flow ratios are quite similar, however, making process transfer between the two rather easy. Finally, we have compared ex-situ “HF-Last” wet cleanings and in-situ surface preparation processes for Si surface conditioning prior to epitaxy. Surfaces are after the latter always under high purity N2. This results in a threshold H2 bake temperature (above which there is no O interfacial contamination anymore) which is shifted downwards by ~ 25°C (from 775°C down to 750°C). Below that threshold, O sheet concentrations are with in-situ processes typically one third those associated with “HF-Last” wet cleanings and epitaxial surfaces are smoother.
关键词： surface preparation,SiGe,silane,disilane,RP-CVD,low temperature growth,Si,dichlorosilane
更新于2025-09-23 15:21:01
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Morphological and optoelectronic investigations of CsPbBr3 nanocrystals chelating diphenylammonium halide ligands via low temperature synthesis
摘要： In this study, the low temperature method was adopted to synthesize all-inorganic cesium lead bromide CsPbBr3 nanocrystals (NCs) as the active layer in light-emitting devices. In order to improve film-forming and optoelectronic properties of CsPbBr3 NCs, a surface ligand diphenylammonium bromide (DPABr) was added from 0 to 0.15 mole fraction in proportion to the amount of oleylamine. The experimental results showed that introducing 0.1 mole fraction of DPABr in CsPbBr3 NCs brought the best performance. The SEM and AFM results revealed that smooth and pinhole-free films of CsPbBr3 NCs were formed by introducing DPABr with a low surface roughness of 4.6 nm. The introduced bromide ions can passivate the surface vacancies of CsPbBr3 NCs and improve photoluminescence quantum yield (PLQY) from 38% to 72% compared with the pristine CsPbBr3 NCs. Moreover, shorter and π electron-rich phenyl groups help to increase carrier injection into nanocrystalline core, preventing carriers from being hindered by oleic acid and oleylamine with longer alkyl chains. Therefore, the conductivity of the resulting CsPbBr3 NCs was augmented. The maximum brightness and current efficiency of the optimized device based on CsPbBr3 NCs with 0.1 mole fraction of DPABr were enhanced 2.3- and 3.3-fold, respectively, relative to the pristine one.
关键词： perovskite nanocrystals,low temperature method,photoluminescence quantum yield,surface passivation,diphenylammonium bromide
更新于2025-09-23 15:21:01