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Chemical Bath Deposition of Undoped and Bi-doped n-Cu2Se Films and their Optoelectrical Properties
摘要： Introduction: The effluence of Bi3+ doping on the microstructure and property of the undoped and Bi3+-doped Cu2Se films deposited by chemical bath deposition were studied. Methods: The films showed average UV-visible transmittances of ~73.29-84.10 % that increased with increasing Bi3+ content. The optical bandgaps calculated from optical spectra increased with increasing Bi3+ content. Strong bandgap emission at ~629 nm was also observed. Moreover, the films had actual Se/Cu<2 and n-type conductive. Result: The sheet resistance of ~4.13-96.44×10-3 Ω·cm first decreased and then increased with the increase in Bi content. Conclusion: Various optical constants of the films were estimated with the UV-visible light spectra.
关键词： film deposition,optical property,electrical property,doping,Cu2Se,semiconductor
更新于2025-09-09 09:28:46
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High-Temperature Cycle Durability of Superplastic Al-Zn Eutectoid Solder Joints with Stress Relaxation Characteristics for SiC Power Semiconductor Devices
摘要： We have developed a new high-temperature Al-Zn lead-free soldering process that utilizes superplasticity to realize SiC power devices with high-temperature cycle durability. The joining process consists of an Al-78wt.%Zn preparation being sandwiched by a SiC die and insulation substrate, an interfacial cleaning process at approximately 250-270oC, a heating stage to reach the solid-liquid coexisting temperature of 420-430oC, the ejection of low-melting-temperature β(Zn) from the joining area by press stress, and the transformation to a superplastic composition, i.e., Al-70 wt.% Zn at 270-310oC. Many lamellar phases that enable superplasticity can be formed in this microstructure. This solder joint composition was proven to have a better stress-relaxation effect than eutectic Al-95wt.%Zn, and the composition shows a much higher damping capability at the maximum operating temperature of SiC devices (200oC) than that of other joining candidates. The outstanding temperature cycle durability was verified in temperature cycle tests from -40oC to 300oC for 5000 cycles. This durability is due to the high-stress-relaxation effect from the superplasticity transformation realized by the lamellar structures in the Al-Zn alloy solder.
关键词： lamellar structure,damping capability,power semiconductor,SiC,superplasticity,temperature cycle test,Al-Zn eutectoid solder,lead-free solder,stress relaxation
更新于2025-09-09 09:28:46
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[IEEE 2017 21st European Microelectronics and Packaging Conference (EMPC) & Exhibition - Warsaw (2017.9.10-2017.9.13)] 2017 21st European Microelectronics and Packaging Conference (EMPC) & Exhibition - Advances in X-ray for semicon applications
摘要： Taking x-ray images goes back over 100 years. Since then, there have been numerous advances in x-ray technology and these have been increasingly applied in helping the manufacturing of electronic components and assemblies, as well as in their failure analysis. Most recently, this has been rapidly driven by the reduction in device and feature size and the movement to using newer, lower density materials within the structures, such as copper wire replacing gold wire as the interconnection material of choice within components. Another driver for developments is the engineering of single 3D packages with multiple chips stacked vertically one on top of the other, which results in smaller and more efficient packaging of devices. In order to meet these challenges and those in the future, there have been a number of recent key improvements to the vital components within x-ray systems. The choice of available technologies, however, means selecting the tube/detector combination, which is optimum for a particular electronics inspection application, is no longer so clear-cut. For example, one configuration may provide certain benefits that are applicable for one area of electronics inspection, whilst being less valid for others. This paper will review the various x-ray tube and detector types that are available and explain the implications of these choices for electronics inspection in terms of what they provide regarding image resolution, magnification, tube power, detector pixel size and the effects of detector radiation damage, amongst others. This paper will also look in detail at the capabilities of high end CT systems to inspect wafer bumps, copper pillars and TSV’s, new designs are reducing key dimensions of all of these interconnections challenging x-ray systems to produce clear images.
关键词： x-ray,Image chain,CT methods,PCB inspection,semiconductor
更新于2025-09-09 09:28:46
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Application of Kinetic Flux Vector Splitting Scheme for Solving Viscous Quantum Hydrodynamical Model of Semiconductor Devices
摘要： In this article, one-dimensional viscous quantum hydro dynamical model of semiconductor devices is numerically investigated. The model treats the propagation of electrons in a semiconductor device as the flow of a charged compressible fluid. It plays an important role in predicting the behaviour of electron flow in semiconductor devices. The nonlinear viscous quantum hydrodynamic models contain Euler-type equations for density and current, viscous and quantum correction terms, and a Poisson equation for electrostatic potential. Due to high nonlinearity of model equations, numerical solution techniques are applied to obtain their solutions.. The proposed numerical scheme is a splitting scheme based on the kinetic flux-vector splitting (KFVS) method for the hyperbolic step, and a semi-implicit Runge-Kutta method for the relaxation step. The KFVS method is based on the direct splitting of macroscopic flux functions of the system on the cell interfaces. The second order accuracy of the scheme is achieved by using MUSCL-type initial reconstruction and Runge-Kutta time stepping method. Several case studies are considered. For validation, the results of current scheme are compared with those obtained from the splitting scheme based on the NT central scheme. The effects of various parameters such as device length, viscosities, different doping and voltage are analyzed. The accuracy, efficiency and simplicity of the proposed KFVS scheme validates its generic applicability to the given model equation.
关键词： Semiconductor devices,Kinetic flux vector,Viscous quantum hydro dynamical model
更新于2025-09-09 09:28:46
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14.2: <i>Invited Paper:</i> Quantum Yield Measurement Using Organic Dyes as References for Semiconductor Nanocrystals
摘要： A method of using series of organic dyes as reference to measure the quantum yield efficiency (QY) for semiconductor nanocrystals (Quantum Dots, QDs) in solution state is reported. In the proposed method, the sensitivity of the fluorescence spectrophotometer on wavelength as well as the excitation power intensity is considered to improve the accuracy.
关键词： Semiconductor Nanocrystals,Quantum Dots,QDs,Quantum Yield Efficiency Measurment
更新于2025-09-09 09:28:46
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[Lecture Notes in Computer Science] Neural Information Processing Volume 11307 (25th International Conference, ICONIP 2018, Siem Reap, Cambodia, December 13–16, 2018, Proceedings, Part VII) || Hopfield Neural Network with Double-Layer Amorphous Metal-Oxide Semiconductor Thin-Film Devices as Crosspoint-Type Synapse Elements and Working Confirmation of Letter Recognition
摘要： Arti?cial intelligences are essential concepts in smart societies, and neural networks are typical schemes that imitate human brains. However, the neural networks are conventionally realized using complicated software and high-performance hardware, and the machine size and power consumption are huge. On the other hand, neuromorphic systems are composed solely of optimized hardware, and the machine size and power consumption can be reduced. Therefore, we are investigating neuromorphic systems especially with amorphous metal-oxide semiconductor (AOS) thin-?lm devices. In this study, we have developed a Hop?eld neural network with double-layer AOS thin-?lm devices as crosspoint-type synapse elements. Here, we propose modi?ed Hebbian learning done locally without extra control circuits, where the conductance deterioration of the crosspoint-type synapse elements can be employed as synaptic plasticity. In order to validate the fundamental operation of the neuromorphic system, ?rst, double-layer AOS thin-?lm devices as crosspoint-type synapse elements are actually fabricated, and it is found that the electric current continuously decreases along the bias time. Next, a Hop?eld neural network is really assembled using a ?eld-programmable gate array (FPGA) chip and the double-layer AOS thin-?lm devices, and it is con?rmed that a necessary function of the letter recognition is obtained after learning process. Once the fundamental operations are con?rmed, more advanced functions will be obtained by scaling up the devices and circuits. Therefore, it is expected the neuromorphic systems can be three-dimensional (3D) large-scale integration (LSI) chip, the machine size can be compact, power consumption can be low, and various functions of human brains will be obtained. What has been developed in this study will be the sole solution to realize them.
关键词： Neural network,Hop?eld neural network,Letter recognition,Arti?cial intelligence,Crosspoint-type synapse elements,Double-layer amorphous metal-oxide semiconductor (AOS) thin-?lm device,Modi?ed hebbian learning
更新于2025-09-09 09:28:46
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P-1.10: Solution-processed metal oxide semiconductors fabricated with oxygen radical assisting perchlorate aqueous precursors through a new low-temperature reaction route
摘要： In this report, an innovative and simple chemical route for fabricating MO semiconducting low temperature without any fuel additives or special annealing methods is demonstrated. Different from combustion method, the precursor that we compound contains only two kinds of oxidizers. The precursor, which consisted of perchlorate, nitrate, and DI water, is easily converted into In2O3 at an annealing temperature of 250 °C due to oxygen radical assisting decomposition and large amount of heat generation. It is found that perchlorate salt can decompose and form oxide film with high quality at lower temperature when assisted by nitrate salt. The optimized In2O3-TFT fabricated at 250°C via this precursor exhibits a saturate mobility of 14.5 cm2V-1s-1. Furthermore, this approach has been expanded to fabrication films at 350°C and attained improved performance.
关键词： metal oxide semiconductor,perchlorate salt,solution-process,oxygen radical,Thin-film transistor
更新于2025-09-09 09:28:46
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Sandwich-type copper(II) cluster complex based on novel inorganic ligand [AsIIIMoVI10VV4O47]11- with semiconductor-like property and electrochemical sensing of ascorbic acid and nitrite
摘要： A new tetra-CuII substituted sandwich-type mixed-metal Mo/V polyoxometalate, [NH4]13[Na(H2O)3][Cu4(AsIIIMoVI 10VV 4O47)2]·12H2O (1) has been synthesized and structurally characterized by single-crystal X-ray diffraction, IR spectra, thermogravimetric (TG) analysis, X-ray photoelectron spectroscopy and elemental analyses. The polyoxoanion of 1 represents the sandwich-type framework constructed from two unprecedented {AsIIIMoVI 10VV 4O47} subunits linked by a rhomb-like Cu4O16 group. The novel lacunary {AsIIIMoVI 10VV 4O47} fragments is first observed in AsO3 3--based mixed-metal Mo/V polyoxometalate systems. A series of measurements including the optical band gap, the surface photovoltage spectrum and the photocurrent response are carried out to demonstrate the semiconductor-like property of 1. The functional applications of 1 in electrochemical sensing of ascorbic acid (AA) and NO2 - was also investigated in details.
关键词： Polyoxometalates,Semiconductor-like property,Electrocatalysis,Sandwich-type
更新于2025-09-09 09:28:46
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Precise determination of electron-affinity and band gap via optical response and optical spectra
摘要： In order to obtain both the band gap and a?nity of semiconductor by photoelectric e?ect and optical spectra, Lee A. DuBridge`s formula which describes the mathematical relationship between photocurrent and photon energy in metal is extended in semiconductor. Thus cut-o? energy of photon can be ?gured out via this formula, at the same time, the a?nity of semiconductor can be determined from the di?erence between cut-o? energy and band gap detected by optical spectra in semiconductor. The results of application on ?ve semiconductors prove that the method proposed in this paper is credible, the good agreements between experimental light energy-photoelectric yield curves and theoretical curves demonstrate that the classic Lee A. DuBridge`s theory of surface photoemission does an excellent job of ?tting the photo absorption pro?le shapes of semiconductor as an earlier application on metals, these results suggest that the Lee A. DuBridge`s formalism, which is straightforward and physical, may be of signi?cant utility in semiconductor spectroscopy. It is hoped also that the results will encourage a comprehensive theoretical analysis of the applicability of semiconductor. Beside, how the band gap of Cr3+ doped n-type TiO2 is controlled by composition of Ti is express with mathematical way.
关键词： Semiconductor,Determination,Band gap,Cut-o? energy,A?nity
更新于2025-09-09 09:28:46
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Epitaxial growth of undoped and Li-doped NiO thin films on α–Al2O3 substrates by mist chemical vapor deposition
摘要： Undoped and Li-doped NiO thin films were grown on α-Al2O3 (0001) substrates by mist chemical vapor deposition. Both undoped and Li-doped NiO thin films grew bi-epitaxially on the substrates with crystallographic orientation relationships of NiO(111)[ˉ110]?||?α-Al2O3(0001)[01ˉ10] and NiO(111)[1ˉ10]?||?α-Al2O3(0001)[01ˉ10]. In the Li-doped NiO thin film, a periodic structure was observed, in accordance with a mirror-symmetrical oxygen layer on the terraces of the substrate. Both undoped and Li-doped NiO thin films exhibited high transmittance (>80%) in the visible-light region and optical bandgaps of 3.7–3.8 eV. The undoped NiO thin film showed insulating properties and a resistivity of 106 ??cm or higher. In contrast, the Li-doped NiO thin films had resistivities of 101–105 ??cm, depending on the Li precursor concentration. Furthermore, they exhibited positive Seebeck coefficients, indicating their p-type conductivity. These results indicate that Li dopants effectively act as acceptors in NiO thin films.
关键词： A3.Mist CVD,B1.Nickel oxide,B2.Wide bandgap oxide semiconductor,B1.Li-doped nickel oxide
更新于2025-09-09 09:28:46